MOTOROLA MRF19045LSR3

MOTOROLA
Freescale Semiconductor, Inc.
Order this document
by MRF19045/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
MRF19045LR3
MRF19045LSR3
Freescale Semiconductor, Inc...
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA
Multi - carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
885 kHz: - 50 dBc @ 30 kHz BW
IM3 — - 37 dBc
• 100% Tested Under 2 - Carrier N - CDMA
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
1990 MHz, 45 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF19045LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF19045LSR3
MAXIMUM RATINGS
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
105
0.60
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
1.65
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Class
2 (Minimum)
Machine Model
M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 6
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
For More Information On This Product,
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MRF19045LR3 MRF19045LSR3
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 550 mAdc)
VGS(Q)
3
3.8
5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.19
0.21
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.2
—
S
Crss
—
1.8
—
pF
OFF CHARACTERISTICS
Freescale Semiconductor, Inc...
ON CHARACTERISTICS (DC)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in
1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth.
Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
Gps
13
14.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
η
21
23.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz; IM3 Measured in a 1.2288 MHz Integrated Bandwidth
Centered at f1 - 2.5 Mhz and f2 +2.5 MHz, Referenced to the Carrier
Channel Power)
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 45
dBc
IRL
—
- 16
-9
dB
P1dB
—
45
—
W
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-carrier N-CDMA, IDQ = 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; ACPR measured in a 30 kHz Integrated Bandwith
Centered at f1 - 885 kHz and f2 +885 kHz)
Input Return Loss
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
Pout, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 550 mA, f = 1990 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 45 W CW, IDQ = 550 mA,
f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF19045LR3 MRF19045LSR3
2
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
VGG
+
R2
R3
B1
W1
Z4
Z8
R4
R5
W2
B2
B2
+
C9
+
C1
C2
C3
C4
R1
C6
C7
Z3
C8
Z1
Z2
C10
+
C11
Z7
Z6
RF
INPUT
+
VDD
Z9
Z10
Z11
C12
RF
OUTPUT
C13
Z5
Freescale Semiconductor, Inc...
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
1.336″
0.693″
1.033″
0.468″
0.271″
0.263″
1.165″
x 0.081″
x 0.081″
x 0.047″
x 0.047″
x 0.460″
x 0.930″
x 0.047″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z8
Z9
Z10
Z11
PCB
0.216″ x 0.047″ Microstrip
0.519″ x 0.254″ Microstrip
0.874″ x 0.081″ Microstrip
0.645″ x 0.081″ Microstrip
Arlon GX0300-55-22, 30 mils,
εr = 2.55
NOTE: Z3, Z4, Z7, Z8 lengths and component placement tolerances are ±0.050″.
Zx lengths are microstrip lengths between components, center-line to center-line.
All component and z-length tolerances are ±0.015″, except as noted.
Figure 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic
Table 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values
Designators
Description
B1, B2
0.120″ x 0.333″ x 0.100″, Surface Mount Ferrite Beads, Fair Rite #2743019446
C1, C2
10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394
C3, C11
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C4, C8
24 pF Chip Capacitors, B Case, ATC #100B240JP500X
C5
470 pF Chip Capacitor, B Case, ATC #100B471JP200X
C6, C7
11 pF Chip Capacitors, B Case, ATC #100B110JP500X
C9, C10, C12
22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
C13
8.2 pF Chip Capacitor, B Case, ATC #100B8R2CP500X
R1
560 kΩ, 1/4 W Chip Resistor (0.08″ x 0.13″)
R2, R3, R4, R5
8.2 Ω, 1/4 W Chip Resistors (0.08″ x 0.13″), Garrett Instruments #RM73B2B110JT
W1, W2
Solid Copper Buss Wire, 16 AWG
WS1, WS2
Beryllium Copper Wear Blocks (0.005″ x 0.150″ x 0.350″) Nominal
MOTOROLA RF DEVICE DATA
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MRF19045LR3 MRF19045LSR3
3
Freescale Semiconductor, Inc.
C9 C10
C1
R1
B1
R2
W1
R3
C12
C8
W2
R4
B2
R5
C11
C3
C13
WS2
C5
Freescale Semiconductor, Inc...
C6
WS1
C2
C7
C4
MRF19045/S
Rev - 0
Figure 2. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout
MRF19045LR3 MRF19045LSR3
4
MOTOROLA RF DEVICE DATA
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IM3
−40
η
−45
25
−50
20
ACPR
15
−55
Gps
10
−60
5
−65
0
−70
1
2
3
4
5
6
7
8
9
10
11
12
30
25
−20
η
20
−30
IM3
15
−40
Gps
10
−50
ACPR
5
−60
1900
1930
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
VDD = 26 Vdc
IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
350 mA
450 mA
550 mA
−45
700 mA
−50
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%)
−55
1
2
3
4
5
6
7
8
9
10
11
VDD = 26 Vdc
IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
−50
350 mA
−55
450 mA
−60
700 mA
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%
Probability) (CCDF)
−65
550 mA
−70
1
2
3
4
5
6
7
8
9
10
11
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 5. 2-Carrier N-CDMA IM3
versus Output Power
Figure 6. 2-Carrier N-CDMA ACPR
versus Output Power
15.5
700 mA
550 mA
15.0
450 mA
350 mA
14.5
VDD = 26 Vdc, IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
14.0
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF)
13.5
0
2020
−45
0
12
1
2
3
4
5
6
7
8
9
10
11
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 7. 2-Carrier N-CDMA Power Gain
versus Output Power
MOTOROLA RF DEVICE DATA
12
η, DRAIN EFFICIENCY (%), Pout , OUTPUT POWER (WATTS CW)
0
1990
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL
and Drain Efficiency versus Output Power
−30
−40
1960
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
−35
−10
70
12
17
P out
P 1dB
60
16
P 3dB
50
15
η
40
14
30
13
Gps
20
12
VDD = 26 Vdc
IDQ = 550 mA
f = 1960 MHz
10
G ps , POWER GAIN (dB)
30
−35
IM3 (dBc), ACPR (dBc)
35
0
VDD = 26 Vdc, IDQ = 550 mA 2.5 MHz Carrier Spacing
1.2288 MHz Source Channel Bandwidth
9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%)
IRL
IM3 (dBc), ACPR (dBc), IRL (dB)
35
−30
VDD = 26 Vdc
IDQ = 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
40
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
G ps , POWER GAIN (dB)
Freescale Semiconductor, Inc...
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
11
0
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Pin, INPUT POWER (WATTS CW)
Figure 8. CW Output Power, Power Gain and Drain
Efficiency versus Input Power
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5
Freescale Semiconductor, Inc.
30
−35
25
−40
20
−45
Gps
15
−50
−55
10
IMD
−60
5
η
0
0.1
−65
1.0
10
100
40
0
η
−5
35
VDD = 26 Vdc
IDQ = 450 mA
100 kHz Tone Spacing
30
IRL
25
−10
−15
−20
20
G ps
15
10
−25
−30
IMD
5
1900
1930
Pout, OUTPUT POWER (WATTS PEP)
1960
1990
−35
2020
f, FREQUENCY (MHz)
Figure 9. CW Two-Tone Power Gain, IMD and
Drain Efficiency versus Output Power
Figure 10. CW Two-Tone Power Gain, Input Return Loss,
IMD and Drain Efficiency versus Frequency
−25
16.0
VDD = 26 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
−30
−40
15.5
350 mA
−35
700 mA
−45
−50
550 mA
−55
450 mA
−60
700 mA
15.0
550 mA
14.5
450 mA
14.0
13.5
−65
VDD = 26 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
350 mA
−70
0.1
1.0
10
13.0
0.1
100
1.0
Figure 12. CW Two-Tone Power Gain versus
Output Power
−20
−20
VDD = 26 Vdc
IDQ = 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
−40
−40
−50
3rd Order
−IM3 @
1.2288 MHz
Integrated BW
+IM3 @
1.2288 MHz
Integrated BW
−80
5th Order
−90
−80
−90
0.1
−60
−70
−60
−70
1.2288 MHz
Channel BW
−30
(dBc)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 11. CW Two-Tone Intermodulation Distortion
versus Output Power
−50
100
Pout, OUTPUT POWER (WATTS PEP)
Pout, OUTPUT POWER (WATTS PEP)
−30
10
7th Order
1.0
−100
10
100
Pout, OUTPUT POWER (WATTS PEP)
Figure 13. CW Two-Tone Intermodulation Distortion Products
versus Output Power
MRF19045LR3 MRF19045LSR3
6
−ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
−110
−120
f, FREQUENCY (MHz)
Figure 14. 2-Carrier N-CDMA Spectrum
MOTOROLA RF DEVICE DATA
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IMD, INTERMODULATION DISTORTION (dBc), IRL (dB)
−30
VDD = 26 Vdc
IDQ = 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
35
IMD, INTERMODULATION DISTORTION (dBc)
−25
40
G ps , POWER GAIN (dB)
Freescale Semiconductor,
Inc...
IMD, INTERMODULATION DISTORTION (dBc)
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Freescale Semiconductor, Inc.
Zo = 25 Ω
f = 1990 MHz
Zload
f = 1930 MHz
Zsource
f = 1930 MHz
Freescale Semiconductor, Inc...
f = 1990 MHz
VDD = 26 V, IDQ = 550 mA, Pout = 9 W Avg., 2−Carrier N−CDMA
f
MHz
Zsource
Ω
Zload
Ω
1930
15.52 - j16.5
4.52 - j1.86
1960
14.24 - j14.44
3.85 - j1.04
1990
11.11 - j13.01
3.44 - j0.69
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
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MRF19045LR3 MRF19045LSR3
7
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Freescale Semiconductor, Inc...
NOTES
MRF19045LR3 MRF19045LSR3
8
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc...
NOTES
MOTOROLA RF DEVICE DATA
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MRF19045LR3 MRF19045LSR3
9
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
NOTES
MRF19045LR3 MRF19045LSR3
10
MOTOROLA RF DEVICE DATA
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PACKAGE DIMENSIONS
2X
G
bbb
Q
M
T B
A
M
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
3
2X K
B
2
2X D
bbb
T A
M
M
B
M
N (LID)
Freescale Semiconductor, Inc...
ccc
M
T A
B
M
ccc
M
aaa
M
T A
M
B
M
A
2X D
bbb M T A
S
(INSULATOR)
SEATING
PLANE
aaa
A
M
F
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
M
T A
H
B
M
M
B
2
2X K
M
T A
M
N
E
B
R
M
(LID)
ccc
(LID)
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
ccc
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465E - 04
ISSUE E
NI - 400
MRF19045LR3
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
T A
B
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE C
NI - 400S
MRF19045LSR3
MOTOROLA RF DEVICE DATA
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MRF19045LR3 MRF19045LSR3
11
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Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part.
MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2004
HOW TO REACH US:
USA /EUROPE /LOCATIONS NOT LISTED:
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P.O. Box 5405, Denver, Colorado 80217
1-800-521-6274 or 480-768-2130
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center,
3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan
81-3-3440-3569
ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852-26668334
HOME PAGE: http://motorola.com/semiconductors
MRF19045LR3 MRF19045LSR3
12
MOTOROLA RF DEVICE DATA
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MRF19045/D