MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc... Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. 2170 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs • Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power — 2.1 Watts Power Gain — 13.5 dB Efficiency — 21% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel. • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. CASE 360B - 05, STYLE 1 NI - 360 MRF21010LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF21010LSR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 43.75 0.25 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Max Unit RθJC 5.5 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MOTOROLA RF DEVICE DATA Motorola, Inc. 2003 For More Information On This Product, Go to: www.freescale.com MRF21010LR1 MRF21010LSR1 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID =10 µA) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 V, ID = 50 µA) VGS(th) 2.5 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(Q) 2.5 4 4.5 Vdc Drain - Source On - Voltage (VGS = 10 V, ID = 0.5 A) VDS(on) — 0.4 0.5 Vdc Forward Transconductance (VDS = 10 V, ID = 1 A) gfs — 0.95 — S Crss — 1 — pF Two - Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Gps 12 13.5 — dB Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) η 31 35 — % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) IMD — - 35 - 30 dBc Input Return Loss (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) IRL — - 12 - 10 dB P1dB — 11 — W Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) Gps — 12 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) η — 42 — % Output Mismatch Stress (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz) MRF21010LR1 MRF21010LSR1 2 No Degradation In Output Power Before and After Test MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. VGG R1 C6 + C4 C3 C8 VDD C9 Z5 DUT Z1 C7 C5 Z4 RF INPUT + + R2 Z2 Z6 Z7 RF OUTPUT Z8 Z3 C10 C2 Z1 Z2 Z3 Z4 Z5 0.964″ 0.905″ 0.433″ 1.068″ 0.752″ x 0.087″ x 0.087″ x 0.512″ x 0.087″ x 0.087″ Microstrip Microstrip Microstrip Microstrip Microstrip Z6 Z7 Z8 PCB 0.453″ x 1.118″ Microstrip 0.921″ x 0.154″ Microstrip 0.925″ x 0.087″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 Figure 1. MRF21010L Test Circuit Schematic Table 1. MRF21010L Test Circuit Component Designations and Values Part C1 * Description Value, P/N or DWG Manufacturer (eared) 2.2 pF Chip Capacitor, B Case 100B2R2BW ATC (earless) 1.8 pF Chip Capacitor, B Case 100B1R8BW ATC C2 0.5 pF Chip Capacitor, B Case 100B0R5BW ATC C3, C9 10 µF, 35 V Tantalum Chip Capacitors 293D106X9035D2T Sprague - Vishay C4, C7 1 nF Chip Capacitors, B Case 100B102JW ATC C5, C6 5.6 pF Chip Capacitors, B Case 100B5R6BW ATC C8 470 µF, 63 V Electrolytic Capacitor C10 10 pF Chip Capacitor, B Case 100B100GW ATC N1, N2 Type N Connector Flange Mounts 3052 - 1648 - 10 Macom R1 1.0 kW Chip Resistor (0805) R2 12 W Chip Resistor (0805) * Piece part depending on eared / earless version of the device. C8 VGG VDD C3 R1 C6 C7 R2 C9 C4 C5 RF Input C10 C2 RF Output C1 CUTOUT AREA Freescale Semiconductor, Inc... C1 MRF21010 C−XM−00−001−01 Figure 2. MRF21010L Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21010LR1 MRF21010LSR1 3 Freescale Semiconductor, Inc. VGG R1 C1 C4 C5 T1 R2 R3 R4 C6 T2 C2 P1 R6 C7 L5 R5 C3 Freescale Semiconductor, Inc... Ground V DD C8 L1 L2 L4 L3 C10 C9 MRF21010 C−XM−99−001−01 Figure 3. MRF21010L Demonstration Board Component Layout Table 2. MRF21010L Demonstration Board Component Designations and Values Designators Description C1 1 mF Chip Capacitor (0805), AVX #08053G105ZATEA C2, C6 10 mF, 35 V Tantalum Capacitors, Vishay - Sprague #293D106X9035D C3, C4 6.8 pF Chip Capacitors, ACCU - P (0805), AVX #08051J6R8CBT C5 10 nF Chip Capacitor (0805), AVX #08055C103KATDA C7 1.5 pF Chip Capacitor, ACCU - P (0805), AVX #08051J2R2BBT C8, C10 0.5 pF Chip Capacitors, ACCU - P (0805), AVX #08051J0R5BBT C9 10 pF Chip Capacitor, ACCU - P (0805), AVX #08055J100GBT L1 19 mm × 1.07 mm L2 7.7 mm × 13.8 mm L3 9.3 mm × 22 mm L4 17.7 mm × 3.5 mm L5 3.4 mm × 1.5 mm R1, R6 10 W, 1/8 W Chip Resistors (0805) R2, R3 1 kW, 1/8 W Chip Resistors (0805) R4 2.2 kW, 1/8 W Chip Resistor (0805) R5 0 W, 1/8 W Chip Resistor (0805) P1 5 kW Potentiometer CMS Cermet Multi - Turn, Bourns #3224W T1 Voltage Regulator, Micro - 8, Motorola #LP2951 T2 Bipolar NPN Transistor, SOT - 23, Motorola #BC847 PCB Rogers RO4350, 0.5 mm, εr = 3.53 MRF21010LR1 MRF21010LSR1 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. −10 30 IRL 25 −15 VDD = 28 Vdc, Pout = 10 W (PEP), IDQ = 100 mA Two Tone Measurement, 100 kHz Tone Spacing 20 −20 15 −25 10 Gps −30 5 IMD −35 0 2000 2080 2110 2140 2170 f, FREQUENCY (MHz) 2200 −40 2280 VDD = 28 Vdc, IDQ = 130 mA, f = 2140 MHz Channel Spacing 5 MHz, BW 4.096 MHz 25 (15 Channels) η 20 −30 VDD = 28 Vdc, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing −35 −40 80 mA 100 mA −45 150 mA −50 130 mA −55 −60 0.1 1 10 100 −30 Gps 15 10 −40 −50 ACPR 5 0.5 1 1.5 2 2.5 3 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA −20 VDD = 28 Vdc, IDQ = 100 mA, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing −25 3rd Order −30 −35 −40 5th Order −45 −50 −55 7th Order −60 −65 −70 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power Figure 7. Intermodulation Distortion Products versus Output Power 14.5 15 Pout = 10 W (PEP), IDQ = 100 mA, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing G ps , POWER GAIN (dB) 14.0 150 mA 130 mA 100 mA 13.0 80 mA 12.5 12.0 0.1 100 −30 VDD = 28 Vdc, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing 13.5 −60 3.5 Figure 5. W - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −25 −20 −32 −34 14 Gps 13 −36 −38 IMD −40 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain versus Output Power MOTOROLA RF DEVICE DATA 100 ACPR, ADJACENT CHANNEL POWER RATIO (dB) −5 −10 30 12 22 26 28 30 VDD, DRAIN VOLTAGE (VOLTS) −42 32 Figure 9. Intermodulation and Gain versus Supply Voltage For More Information On This Product, Go to: www.freescale.com MRF21010LR1 MRF21010LSR1 5 IMD, INTERMODULATION DISTORTION (dBc) η 35 η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) 0 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 Figure 4. Class AB Broadband Circuit Performance G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Freescale Semiconductor, Inc. f = 1990 MHz Zo = 10 Ω Zload f = 2230 MHz f = 1990 MHz Freescale Semiconductor, Inc... Zsource f = 2230 MHz VDD = 28 V, IDQ = 100 mA, Pout = P1dB CW f MHz Zsource Ω Zload Ω 1990 2.85 - j4.38 2.93 - j1.71 2110 2.89 - j5.04 2.76 - j2.28 2230 2.73 - j6.19 2.83 - j2.59 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Series Equivalent Input and Output Impedance MRF21010LR1 MRF21010LSR1 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS Q aaa 2X G B M T A M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 3 B (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc 2 D bbb M T A K 2X 2X M B M R (LID) N ccc Freescale Semiconductor, Inc... (LID) T A M M B ccc M C E T M (INSULATOR) A M T A M B M F H S SEATING PLANE bbb M (INSULATOR) T A M B aaa M M T A M B INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE M A CASE 360B - 05 ISSUE F NI - 360 MRF21010LR1 A A (FLANGE) B 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 2 B (FLANGE) 2X D bbb M T A M 2X K B M R (LID) ccc N M T A M (LID) ccc T A M M B M B M F H E C S (INSULATOR) PIN 3 T M (INSULATOR) bbb M T A M B SEATING PLANE M MOTOROLA RF DEVICE DATA aaa M T A M B M 360C- 05 ISSUE D NI - 360S MRF21010LSR1 For More Information On This Product, Go to: www.freescale.com DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF21010LR1 MRF21010LSR1 7 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21010LR1 MRF21010LSR1 8 ◊ MOTOROLA RF DEVICE MRF21010/D DATA For More Information On This Product, Go to: www.freescale.com