MOTOROLA P2N2907A

Order this document
by P2N2907A/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–60
Vdc
Collector – Base Voltage
VCBO
–60
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–60
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
ICEX
—
–50
nAdc
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
ICBO
—
—
–0.01
–10
Emitter Cutoff Current
(VEB = –3.0 Vdc)
IEBO
—
–10
nAdc
Collector Cutoff Current
(VCE = –10 V)
ICEO
—
–10
nAdc
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
IBEX
—
–50
nAdc
Characteristic
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width
µAdc
v 300 ms, Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
P2N2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
75
100
100
100
50
—
—
—
300
—
—
—
–0.4
–1.6
—
—
–1.3
–2.6
fT
200
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
30
pF
ton
—
50
ns
td
—
10
ns
tr
—
40
ns
toff
—
110
ns
ts
—
80
ns
tf
—
30
ns
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)(1)
(IC = –500 mAdc, VCE = –10 Vdc)(1)
hFE
—
Collector – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(1), (2)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc) (Figures 1 and 5)
Rise Time
Turn–Off Time
Storage Time
Fall Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc) (Figure 2)
v
v
1. Pulse Test: Pulse Width
300 ms, Duty Cycle
2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
–30 V
200
1.0 k
0
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
50
–16 V
200 ns
Figure 1. Delay and Rise Time Test Circuit
2
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
+15 V
–6.0 V
1.0 k
1.0 k
0
–30 V
50
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
200 ns
Figure 2. Storage and Fall Time Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
P2N2907A
TYPICAL CHARACTERISTICS
hFE , NORMALIZED CURRENT GAIN
3.0
VCE = –1.0 V
VCE = –10 V
2.0
TJ = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.3
0.2
–0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70 –100
–200 –300
–500
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
–1.0
–0.8
IC = –1.0 mA
–10 mA
–100 mA
–500 mA
–0.6
–0.4
–0.2
0
–0.005
–0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3 –0.5 –0.7 –1.0
IB, BASE CURRENT (mA)
–3.0
–2.0
–5.0 –7.0 –10
–20 –30
–50
Figure 4. Collector Saturation Region
500
tr
100
70
50
300
VCC = –30 V
IC/IB = 10
TJ = 25°C
30
20
tf
td @ VBE(off) = 0 V
3.0
–5.0 –7.0 –10
2.0 V
–20 –30
–50 –70 –100
IC, COLLECTOR CURRENT
100
70
50
30
t′s = ts – 1/8 tf
20
10
7.0
5.0
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
200
t, TIME (ns)
t, TIME (ns)
300
200
–200 –300 –500
Figure 5. Turn–On Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
7.0
5.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn–Off Time
3
P2N2907A
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
8.0
8.0
NF, NOISE FIGURE (dB)
IC = –1.0 mA, Rs = 430 Ω
–500 µA, Rs = 560 Ω
–50 µA, Rs = 2.7 kΩ
–100 µA, Rs = 1.6 kΩ
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
C, CAPACITANCE (pF)
50
100
200
500 1.0 k 2.0 k
20 k
Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
Ceb
10
7.0
Ccb
5.0
3.0
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0 –5.0
–10
–20 –30
50 k
400
300
200
100
80
VCE = –20 V
TJ = 25°C
60
40
30
20
–1.0 –2.0
–5.0
–10
–20
–50
–100 –200
–500 –1000
REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
+0.5
–1.0
TJ = 25°C
–0.6
0
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/ ° C)
–0.8
VBE(on) @ VCE = –10 V
–0.4
–0.2
RqVC for VCE(sat)
–0.5
–1.0
–1.5
RqVB for VBE
–2.0
VCE(sat) @ IC/IB = 10
0
–0.1 –0.2
4
5.0 k 10 k
f, FREQUENCY (kHz)
20
V, VOLTAGE (VOLTS)
IC = –50 µA
–100 µA
–500 µA
–1.0 mA
4.0
0
100
30
2.0
–0.1
6.0
2.0
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
–0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100 –200
–500
–2.5
–0.1 –0.2 –0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200 –500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
P2N2907A
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
5
P2N2907A
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: [email protected] – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
◊
*P2N2907A/D*
P2N2907A/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data