Order this document by 2N4264/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Base Voltage VCBO 30 Vdc Emitter – Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W Operating and Storage Junction Temperature Range CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 15 — 30 — 6.0 — — — 0.1 10 — 100 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 12 Vdc, VEB(off) = 0.25 Vdc) (VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100°C) IBEV Collector Cutoff Current (VCE = 12 Vdc, VEB(off) = 0.25 Vdc) ICEX Vdc Vdc Vdc µAdc nAdc REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 2N4264 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 25 40 20 40 30 20 — 160 — — — — — — 0.22 0.35 0.65 0.75 0.8 0.95 fT 300 — MHz Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 8.0 pF Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz, IE = 0) Cobo — 4.0 pF ( CC = 10 Vdc,, VEB(off) = 2.0 Vdc,, (V IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C) td — 8.0 ns tr — 15 ns VCC = 10 Vdc, (IC = 10 mAdc, for ts) (IC = 100 mA for tf) (IB1 = –10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C) ts — 20 ns tf — 15 ns Turn–On Time (VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A) ton — 25 ns Turn–Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A) toff — 35 ns Storage Time (VCC = 10 Vdc, IC = 10 mA, IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B) ts — 20 ns Total Control Charge (VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc) (Fig. 3, Test Condition A) QT — 80 pC ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc, TA = – 55°C) (IC = 30 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc)(1) (IC = 200 mAdc, VCE = 1.0 Vdc)(1) hFE — Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc)(1) VCE(sat) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc)(1) VBE(sat) Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Figure 1. Switching Time Equivalent Test Circuit Test Condition IC 2 VCC RS mA V Ω A 10 3 B 10 C 100 RC CS(max) VBE(off) Ω pF V 3300 270 4 –1.5 10 560 960 4 — 10 560 12 –2.0 96 V1 V2 V3 V V V 10.55 –4.15 10.70 — –4.65 6.55 6.35 –4.65 6.55 V1 ton t1 V3 0 V2 0 VEB(off) < 2 ns toff t1 VCC RC RB CS < 2 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N4264 CURRENT GAIN CHARACTERISTICS 100 2N4264 VCE = 1 V h FE, DC CURRENT GAIN 70 TJ = 125°C 50 25°C –15°C 30 – 55°C 20 10 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 Figure 2. Minimum Current Gain 270 Ω t1 3V 8 pF +10 V ∆V 0 C < COPT CS < 4 pF C <1 ns 9.2 kΩ PULSE WIDTH (t1) = 5 µs DUTY CYCLE = 2% C=0 COPT TIME Figure 3. QT Test Circuit Figure 4. Turn–Off Waveform NOTE 1 When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or “stored” in the transistor. QS may be written: QS = Q1 + QV + QX. Q1 is the charge required to develop the required collector current. This charge is primarily a function of alpha cutoff frequency. QV is the charge required to charge the collector–base feedback capacity. QX is excess charge resulting from overdrive, i.e., operation in saturation. The charge required to turn a transistor “on” to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant current step IC . (IB1) and IB1 < < hFE If IB were suddenly removed, the transistor would continue to conduct until QS is removed from the active regions through an external path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a charge, QT, of opposite polarity, equal in magnitude, can be stored on an external capacitor, C, to neutralize the internal charge and considerably reduce the turn–off time of the transistor. Figure 3 shows the test circuit and Figure 4 the turn–off waveform. Given QT from Figure 13, the external C for worst–case turn–off in any circuit is: C = QT/∆V, where ∆V is defined in Figure 3. Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 2N4264 “ON” CONDITION CHARACTERISTICS VCE, MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 2N4264 TJ = 25°C 0.8 IC = 10 mA 50 mA 200 mA 100 mA 0.6 0.4 0.2 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (mA) 5.0 7.0 10 20 30 50 Figure 5. Collector Saturation Region 1.0 IC/IB = 10 TJ = 25°C θV, TEMPERATURE COEFFICIENTS (mV/°C) Vsat , SATURATION VOLTAGE (VOLTS) 1.2 MAX VBE(sat) MIN VBE(sat) 0.8 0.6 MAX VCE(sat) 0.4 0.2 0 1.0 2.0 3.0 50 70 100 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Saturation Voltage Limits 4 200 1.0 0.5 qVC for VCE(sat) (25°C to 125°C) (– 55°C to 25°C) 0 – 0.5 (25°C to 125°C) – 1.0 qVB for VBE (– 55°C to 25°C) – 1.5 – 2.0 0 40 80 120 160 IC, COLLECTOR CURRENT (mA) 200 Figure 7. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N4264 DYNAMIC CHARACTERISTICS 200 200 VCC = 10 V TJ = 25°C 100 70 70 t r , RISE TIME (ns) t d, DELAY TIME (ns) 100 IC/IB = 10 TJ = 25°C TJ = 125°C td @ VEB(off) = 3 V 50 30 2V 20 0V 10 VCC = 10 V 50 30 20 VCC = 3 V 10 7.0 7.0 5.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 Figure 8. Delay Time 200 IC/IB = 20 30 TJ = 25°C TJ = 125°C IC/IB = 10 20 10 ts′ 7.0 VCC = 10 V TJ = 25°C TJ = 125°C 100 t f , FALL TIME (ns) t s , STORAGE TIME (ns) 200 Figure 9. Rise Time 50 ^ ts – 1/8 tf 70 50 30 IC/IB = 20 20 IC/IB = 10 10 IB1 = IB2 7.0 5.0 5.0 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 100 200 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 Figure 10. Storage Time 100 200 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 11. Fall Time 10 1000 MAX TYP 7.0 IC/IB = 10 TJ = 25°C TJ = 125°C 700 500 Cibo Q, CHARGE (pC) CAPACITANCE (pF) 100 5.0 Cobo 3.0 300 200 QT 100 VCC = 3 V 70 50 VCC = 10 V 30 2.0 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (Vdc) 5.0 10 Figure 12. Junction Capacitance Motorola Small–Signal Transistors, FETs and Diodes Device Data 20 QA VCC = 3 V 1.0 2.0 3.0 Figure 13. Maximum Charge Data 5 2N4264 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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