MOTOROLA Order this document by T2800/D SEMICONDUCTOR TECHNICAL DATA T2800 SERIES Triacs Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. • Blocking Voltage to 600 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • T2800 — Four Quadrant Gating TRIACs 8 AMPERES RMS 200 thru 600 VOLTS MT2 MT1 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Off-State Voltage(1) (TJ = –40 to +100°C, Gate Open) T2800 B D M RMS On-State Current (Conduction Angle = 360°) Value VDRM (TC = +80°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = +80°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power (Pulse Width = 1 µs) Average Gate Power Peak Gate Trigger Current (Pulse Width = 1 µs) Operating Junction Temperature Range Storage Temperature Range Unit Volts 200 400 600 IT(RMS) 8 Amps ITSM 100 Amps I2t 40 A2s PGM 16 Watts PG(AV) 0.35 Watt IGTM 4 Amps TJ –40 to +100 °C Tstg –40 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 2.2 °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV 1 Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Blocking Current (VD = Rated VDRM, Gate Open) Symbol TC = 25°C TC = 100°C Peak On-State Voltage (Either Direction)* (IT = 30 A Peak) VTM Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ohms) MT2(+), G(+) T2800 MT2(+), G(–) T2800 MT2(–), G(–) T2800 MT2(–), G(+) T2800 IGT Gate Trigger Voltage (Continuous dc) (All Polarities) (VD = 12 Vdc, RL = 100 Ohms) (RL = 125 Ohms, VD = VDRM, TC = 100°C) VGT Holding Current (Either Direction) (VD = 12 Vdc, Gate Open) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C) T2800 — — 10 2 µA mA — 1.7 2 Volts 10 20 15 30 25 60 25 60 — 0.2 1.25 — 2.5 — — 15 30 tgt — 1.6 — µs dv/dt(c) — 10 — V/µs Volts mA p 300 µs, Duty Cycle p 2%. 95 90 85 80 6 IT(RMS), RMS ON-STATE CURRENT (AMP) — — — — — — FIGURE 2 – POWER DISSIPATION FULL CYCLE SINUSOIDAL WAVEFORM 4 V/µs 100 — 60 P(AV) , AVERAGE POWER DISSIPATION (WATTS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) — — — — — — B D M 100 2 Unit dv/dt FIGURE 1 – CURRENT DERATING 2 Max IH Critical Rate-of-Rise of Commutation Voltage (VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) 0 Typ mA T2800 Gate Controlled Turn-On Time (VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 µs) *Pulse Test: Pulse Width Min IDRM 8 12 10 FULL CYCLE SINUSOIDAL WAVEFORM 8 MAXIMUM TYPICAL 6 4 2 0 0 2 4 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C S 4 Q A STYLE 4: PIN 1. 2. 3. 4. U 1 2 3 H MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 K Z R L V J G D DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 N CASE 221A-04 (TO–220AB) Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *T2800/D* T2800/D