Order this document by MCR218FP/D SEMICONDUCTOR TECHNICAL DATA Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. ISOLATED SCRs 8 AMPERES RMS 50 thru 800 VOLTS • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts • 80 A Surge Current Capability • Insulated Package Simplifies Mounting G A CASE 221C-02 STYLE 2 K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = –40 to +125°C, Gate Open) MCR218-2FP MCR218-4FP MCR218-6FP MCR218-8FP MCR218-10FP On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C) Preceded and followed by rated current Circuit Fusing (t = 8.3 ms) Peak Gate Power (TC = +70°C, Pulse Width = 10 µs) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Storage Temperature Range p 20%) Value VDRM VRRM Unit Volts 50 200 400 600 800 IT(RMS) 8 Amps ITSM 80 Amps I2t 26 A2s PGM 5 Watts PG(AV) 0.5 Watt IGM 2 Amps V(ISO) 1500 Volts TJ –40 to +125 °C Tstg –40 to +125 °C 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Min Typ Max Unit — — — — 10 2 µA mA IRRM — — 2 mA VTM — 1 1.8 Volts Gate Trigger Current (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms) IGT — 10 25 mA Gate Trigger Voltage (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms) VGT — — 1.5 Volts Gate Non-Trigger Voltage (Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C) VGD 0.2 — — Volts Holding Current (Anode Voltage = 12 Vdc) IH — 16 30 mA Turn-On Time (ITM = 8 A, IGT = 40 mAdc) tgt — 1.5 — µs — — 15 35 — — — 100 — Peak Forward Blocking Current (VD = Rated VDRM, Gate Open) Symbol IDRM TJ = 25°C TJ = 125°C Peak Reverse Blocking Current (VR = Rated VRRM, TJ = 125°C) Forward “On” Voltage(1) (ITM = 16 A Peak) Turn-Off Time (VD = Rated VDRM, ITM = 8 A, IR = 8 A) µs tq TJ = 25°C TJ = 125°C Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) 1. Pulse Test: Pulse Width = 1 ms, Duty Cycle dv/dt V/µs p 2%. 125 115 α α = CONDUCTION ANGLE 105 95 dc 85 α = 30° 75 0 1 90° 120° 60° 2 3 4 180° 5 6 7 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) Figure 1. Current Derating 2 8 P(AV) , AVERAGE ON-STATE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) TYPICAL CHARACTERISTICS 15 12 α α = CONDUCTION ANGLE 9 120° 60° 6 dc 180° 90° α = 30° 3 0 0 1 2 3 4 5 6 7 IT(AV), AVG. ON-STATE CURRENT (AMPS) Figure 2. On-State Power Dissipation Motorola Thyristor Device Data 8 80 I TSM , PEAK SURGE CURRENT (AMP) 100 70 TJ = 25°C 50 125°C 30 i F , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMP) 20 10 7 1 CYCLE 75 70 65 TC = 85°C f = 60 Hz 60 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 55 1 5 2 3 4 6 8 10 NUMBER OF CYCLES 3 Figure 4. Maximum Non-Repetitive Surge Current 2 +I 1 0.7 0.5 REVERSE BLOCKING REGION 0.3 –V 0.2 IT VT IH IDRM IRRM VRRM 0.1 0.4 1.2 2 2.8 3.6 4.4 5.2 6 REVERSE AVALANCHE REGION FORWARD BREAKOVER POINT –I VDRM FORWARD BLOCKING REGION +V v F, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Maximum On-State Characteristics Figure 5. Characteristics and Symbols 1 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k Figure 6. Thermal Response Motorola Thyristor Device Data 3 VGT , GATE TRIGGER VOLTAGE (NORMALIZED) I GT, GATE TRIGGER CURRENT (NORMALIZED) 2 VD = 12 V 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 60 80 100 120 140 2 VD = 12 V 1.6 1.2 0.8 0.4 0 –60 –40 –20 TJ, JUNCTION TEMPERATURE (°C) 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Gate Trigger Current versus Temperature Figure 8. Gate Trigger Voltage versus Temperature IH , HOLDING CURRENT (NORMALIZED) 2 VD = 12 V 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Holding Current versus Temperature 4 Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– –B– F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. SEATING PLANE C S P N E A Q H STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE 1 2 3 –Y– K Z J L G R D 3 PL 0.25 (0.010) M B M Y DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 ––– 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 ––– 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 CASE 221C-02 Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 ◊ Motorola Thyristor Device Data *MCR218FP/D* MCR218FP/D