Order this document by MAC4DHM/D SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size Surface Mount DPAK Package • Passivated Die for Reliability and Uniformity • Four–Quadrant Triggering MT2 • Blocking Voltage to 600 V TRIACS 4.0 AMPERES RMS 600 VOLTS • On–State Current Rating of 4.0 Amperes RMS at 93°C • Low Level Triggering and Holding Characteristics G ORDERING INFORMATION • To Obtain “DPAK” in Surface Mount Leadform (Case 369A) Shipped in Sleeves — No Suffix, i.e. MAC4DHM Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, i.e. MAC4DHMT4 • To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — Add “–1” Suffix to Device Number, i.e. MAC4DHM–1 MT2 MT1 MT1 MT2 G CASE 369A–13 STYLE 6 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Rating Peak Repetitive Off–State Voltage (1) (TJ = –40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) Value VDRM MAC4DHM MAC4DLM On–State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 93°C) Peak Non–Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 110°C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width ≤ 10 sec, TC = 93°C) Average Gate Power (t = 8.3 msec, TC = 93°C) Unit Volts 600 600 IT(RMS) Amps 4.0 ITSM 40 I2t 6.6 PGM A2sec Watts 0.5 PG(AV) 0.1 Peak Gate Current (Pulse Width ≤ 10 sec, TC = 93°C) IGM 0.2 Amps Peak Gate Voltage (Pulse Width ≤ 10 sec, TC = 93°C) VGM 5.0 Volts TJ –40 to 110 °C Tstg –40 to 150 Symbol Max Unit RJC RJA RJA 3.5 88 80 °C/W Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient (2) Maximum Lead Temperature for Soldering Purposes (3) TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8″ from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristics Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) TJ = 25°C TJ = 110°C Peak On–State Voltage (1) (ITM = ± 6.0 A) Typ Max — — — — 0.01 2.0 — 1.3 1.6 — — — — 1.8 2.1 2.4 4.2 3.0 3.0 3.0 5.0 — — — — 1.8 2.1 2.4 4.2 5.0 5.0 5.0 10 Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) (VD = 12 V, RL = 10 K W, TJ = 110°C) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–); MT2(–), G(+) 0.5 0.5 0.5 0.5 0.62 0.57 0.65 0.74 1.3 1.3 1.3 1.3 0.1 0.4 — — 1.5 15 — — — — 1.75 5.2 2.1 2.2 10 10 10 10 Min Typ Max Volts IGT MAC4DHM mA VGT Holding Current (VD = 12 V, Gate Open, IT = ± 200 mA) IH Latching Current MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) IL (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 10 mA) Unit mA VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MAC4DLM MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) Min IDRM Volts mA mA DYNAMIC CHARACTERISTICS Characteristics Symbol Rate of Change of Commutating Current (1) (VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/msec, TJ = 110°C, f = 250 Hz, CL = 5.0 mfd, LL = 80 mH, RS = 56 W, CS = 0.03 mfd) See Figure 10 di/dt(c) Critical Rate of Rise of Off–State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C) Unit A/ms — 3.0 — — 10 — dv/dt V/ms (1) Pulse test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 2 Motorola Thyristor Device Data P(AV) , AVERAGE POWER DISSIPATION (WATTS) 110 a = 30° 105 60° 90° 100 α α 120° 95 a = CONDUCTION ANGLE 180° dc 90 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 α 120° α 4.0 90° a = CONDUCTION ANGLE 3.0 2.0 60° a = 30° 1.0 0 0 1.0 0.5 2.0 1.5 3.0 2.5 3.5 Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation TYPICAL @ TJ = 25°C MAXIMUM @ TJ = 110°C 1.0 MAXIMUM @ TJ = 25°C 0.1 0.5 1.0 1.5 2.0 3.5 3.0 2.5 4.0 1.0 0.1 ZqJC(t) = RqJC(t)Sr(t) 0.01 0.1 4.0 1.0 10 100 1000 10 K VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On–State Characteristics Figure 4. Transient Thermal Response 1.0 7.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) 8.0 I GT, GATE TRIGGER CURRENT (mA) 5.0 IT(RMS), RMS ON–STATE CURRENT (AMPS) 10 Q4 6.0 5.0 dc 180° IT(RMS), RMS ON–STATE CURRENT (AMPS) 100 0 6.0 4.0 r(t) , TRANSIENT RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON–STATE CURRENT (AMPS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) Q3 4.0 Q2 3.0 Q1 2.0 1.0 0 –40 –25 Q4 Q1 0.8 Q2 0.6 Q3 0.4 0.2 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature Motorola Thyristor Device Data 110 3 12 4.0 IL, LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) 5.0 3.0 MT2 NEGATIVE 2.0 MT2 POSITIVE 1.0 10 8.0 Q2 6.0 4.0 Q4 2.0 Q1 Q3 0 –40 –25 0 –10 5.0 35 20 50 65 80 95 110 35 20 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 110 10 VPK = 400 V VD = 400 V TJ = 110°C dv/dt(c), CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ ms) MT2 POSITIVE 15 STATIC dv/dt (V/ ms) 5.0 TJ, JUNCTION TEMPERATURE (°C) 20 MT2 NEGATIVE 100°C TJ = 110°C 90°C 1.0 10 5.0 0 tw VDRM f= 1 2 tw 6f I (di/dt)c = TM 1000 0.1 100 4 –10 –40 –25 1000 10 K 0 1.0 2.0 3.0 4.0 5.0 6.0 RGK, GATE–MT1 RESISTANCE (OHMS) di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 9. Exponential Static dv/dt versus Gate–MT1 Resistance, MT2(+) Figure 10. Critical Rate of Rise of Commutating Voltage Motorola Thyristor Device Data 80 mHY LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC MEASURE I TRIGGER CHARGE CONTROL 5 F NON-POLAR CL TRIGGER CONTROL CHARGE 1N4007 RS 56 – CS 2 1N914 51 G 0.03 F + ADJUST FOR dv/dt(c) 200 V 1 Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage Motorola Thyristor Device Data 5 PACKAGE DIMENSIONS –T– C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G 2 PL 0.13 (0.005) M DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– T CASE 369A–13 ISSUE Y STYLE 6: PIN 1. 2. 3. 4. MT1 MT2 GATE MT2 Motorola reserves the right to make changes without further notice to any products herein. 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