VISHAY SIZ918DT

New Product
SiZ918DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
30
RDS(on) () (Max.)
ID (A)
16
0.0145 at VGS = 4.5 V
16a
0.0037 at VGS = 10 V
28a
0.0045 at VGS = 4.5 V
a
28
Qg (Typ.)
a
0.0120 at VGS = 10 V
6.8 nC
32 nC
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Notebook System Power
• POL
• Synchronous Buck Converter
D1
PowerPAIR® 6 x 5
Pin 1
G1
1
5 mm
D1
2
D1
G1
D1
3
D1
N-Channel 1
MOSFET
4
G2
S1/D2
Pin 9
8
S1/D2
S2
7
6 mm
6
G2
5
N-Channel 2
MOSFET
Ordering Information: SiZ918DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source Drain Diode Current
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Channel-1
Channel-2
30
± 20
V
16a
16a
28a
28a
14.3b, c
11.4b, c
50
16a
26a, b, c
21a, b, c
110
3.4
18
16
29
18
28a
4.3b, c
35
61
100
64
4.2b, c
2.7b, c
5.2b, c
3.3b, c
b, c
TJ, Tstg
Unit
- 55 to 150
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Symbol
Typ.
Max.
Channel-2
Typ.
Max.
Unit
t  10 s
RthJA
24
30
19
24
Maximum Junction-to-Ambientb, f
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
3.4
4.3
1
1.25
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 55 °C/W for channel-2.
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
For more information please contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th)/TJ
VGS(th) Temperature Coefficient
VGS(th)
Gate Threshold Voltage
IGSS
Gate Source Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
Forward Transconductanceb
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Ch-1
30
VGS = 0 V, ID = 250 µA
Ch-2
30
ID = 250 µA
Ch-1
ID = 250 µA
Ch-2
37
ID = 250 µA
Ch-1
-5
V
33
mV/°C
ID = 250 µA
Ch-2
VDS = VGS, ID = 250 µA
Ch-1
1
2.2
VDS = VGS, ID = 250 µA
Ch-2
1.2
2.2
- 7.5
Ch-1
± 100
Ch-2
± 100
VDS = 30 V, VGS = 0 V
Ch-1
1
VDS = 30 V, VGS = 0 V
Ch-2
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-1
5
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-2
VDS 5 V, VGS = 10 V
Ch-1
20
VDS 5 V, VGS = 10 V
Ch-2
20
V
nA
µA
5
A
VGS = 10 V, ID = 13.8 A
Ch-1
0.0100 0.0120
VGS = 10 V, ID = 20 A
Ch-2
0.0030 0.0037
VGS = 4.5 V, ID = 12.6 A
Ch-1
0.0120 0.0145
VGS = 4.5 V, ID = 20 A
Ch-2
0.0035 0.0045
VDS = 10 V, ID = 13.8 A
Ch-1
47
VDS = 10 V, ID = 20 A
Ch-2
116

S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Crss
Qg
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Rg
790
Ch-2
3830
Ch-1
190
Ch-2
670
Ch-1
76
Ch-2
315
pF
VDS = 15 V, VGS = 10 V, ID = 13.8 A
Ch-1
14
21
VDS = 15 V, VGS = 10 V, ID = 20 A
Ch-2
67.3
105
Ch-1
6.8
11
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 13.8 A
Ch-2
32
48
Ch-1
2.6
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 20 A
Ch-2
10.8
Ch-1
1.9
Qgs
Qgd
Ch-1
Ch-2
f = 1 MHz
nC
9.3
Ch-1
0.4
2
4
Ch-2
0.2
1.1
2.2

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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For more information please contact: [email protected]
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Ch-1
15
30
Ch-2
30
60
Ch-1
12
20
Ch-2
33
65
Ch-1
20
40
Ch-2
40
80
Ch-1
10
20
Unit
Dynamica
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
Fall Time
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
IS
TC = 25 °C
td(off)
Turn-Off Delay Time
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Ch-2
12
25
Ch-1
10
20
Ch-2
15
30
Ch-1
12
20
Ch-2
22
25
Ch-1
20
40
Ch-2
40
80
Ch-1
10
20
Ch-2
10
20
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
ISM
VSD
Body Diode Voltage
Body Diode Reverse Recovery Time
28
Ch-1
50
Ch-2
0.85
1.2
IS = 10 A, VGS = 0 V
Ch-2
0.8
1.2
Ch-1
20
40
Ch-2
30
60
Ch-1
10
20
Ch-2
21
40
Ch-1
11
Ch-2
17
Ch-1
9
Ch-2
13
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
110
Ch-1
trr
tb
16
Ch-2
IS = 10 A, VGS = 0 V
Channel-1
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
Ch-1
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
For more information please contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
20
VGS = 10 V thru 4 V
16
I D - Drain Current (A)
I D - Drain Current (A)
50
40
VGS = 3 V
30
20
12
TC = 25 °C
8
4
10
TC = 125 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1200
0.014
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1000
0.012
VGS = 4.5 V
0.010
VGS = 10 V
Ciss
800
600
400
Coss
0.008
200
Crss
0
0.006
0
10
20
30
40
50
0
60
5
ID - Drain Current (A)
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.7
10
R DS(on) - On-Resistance (Normalized)
ID = 13.8 A
VGS - Gate-to-Source Voltage (V)
30
8
VDS = 15 V
6
VDS = 7.5 V
VDS = 24 V
4
2
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
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4
15
1.6
ID = 13.8 A
1.5
VGS = 10 V; 4.5 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
-- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
For more information please contact: [email protected]
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.030
100
ID = 13.8 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.025
10
TJ = 150 °C
TJ = 25 °C
1
0.020
TJ = 125 °C
0.015
TJ = 25 °C
0.010
0.005
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
1.9
50
1.8
1.7
40
1.6
Power (W)
VGS(th) (V)
1.5
ID = 250 µA
1.4
1.3
1.2
30
20
1.1
1.0
10
0.9
0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
Threshold Voltage
10
100
1000
Single Pulse Power
100
Limited by RDS(on)*
100 μs
10
ID - Drain Current (A)
1
Time (s)
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
For more information please contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
30
25
20
30
20
Power (W)
ID - Drain Current (A)
40
Package Limited
15
10
10
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
For more information please contact: [email protected]
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
For more information please contact: [email protected]
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
100
VGS = 10 V thru 4 V
16
VGS = 3 V
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
12
TC = 25 °C
8
TC = 125 °C
20
4
0
0
TC = - 55 °C
0.0
0.5
1.0
1.5
VDS - Drain-to-Source Voltage (V)
0.0
2.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.0045
5000
0.0040
4000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Output Characteristics
VGS = 4.5 V
0.0035
0.0030
3.0
VGS = 10 V
Ciss
3000
2000
0.0025
1000
0.0020
0
Coss
Crss
0
20
40
60
ID - Drain Current (A)
80
100
0
5
10
On-Resistance vs. Drain Current
20
25
30
Capacitance
1.8
10
ID = 20 A
ID = 20 A
VDS = 7.5 V
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
15
VDS - Drain-to-Source Voltage (V)
8
6
VDS = 15 V
VDS = 24 V
4
2
0
0
20
40
60
Qg - Total Gate Charge (nC)
Gate Charge
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8
80
VGS = 10 V
1.6
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For more information please contact: [email protected]
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.010
100
ID = 20 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.008
TJ = 150 °C
10
TJ = 25 °C
1
0.1
0.0
0.006
TJ = 125 °C
0.004
TJ = 25 °C
0.002
0.000
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.4
100
2.2
80
2.0
Power (W)
VGS(th) (V)
1.8
1.6
1.4
ID = 250 μA
1.2
1.0
60
40
20
0.8
0.6
- 50
- 25
0
25
50
75
100
125
0
0.001
150
TJ - Temperature (°C)
0.01
0.1
1
Time (s)
10
Threshold Voltage
Single Pulse Power
100
1000
1000
Limited by RDS(on)*
ID - Drain Current (A)
100
1 ms
10
10 ms
1
100 ms
1s
TA = 25 °C
0.1
10 s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
For more information please contact: [email protected]
www.vishay.com
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
140
100
120
Power (W)
ID - Drain Current (A)
80
100
80
60
40
60
40
Package Limited
20
20
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
TC - Case Temperature (°C)
150
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
For more information please contact: [email protected]
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 55 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
t1
t2
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63783.
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
For more information please contact: [email protected]
www.vishay.com
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
PowerPAIR® 6 x 5 Case Outline
2x
Pin 7
Pin 6
Pin 5
Pin 5
Pin 6
Pin 7
Pin 8
K
L
Pin 8
b
z
L3
A
D
0.10 C
E
E1
D1
K1
Pin #1 Ident
(Optional)
0.10 C
Pin 1
Pin 2
Pin 3
Pin 4
Pin 4
2x
Pin 3
E2
D1
Pin 2
Pin 1
e
TOP SIDE VIEW
BACK SIDE VIEW
0.10 C
A1
A3
b1
A
C
F
0.08 C
F
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.028
0.030
0.032
A1
0.00
-
0.10
0.000
-
0.004
A3
0.20 REF
0.008 REF
b
0.51 BSC
0.020 BSC
b1
0.25 BSC
0.010 BSC
D
D1
5.00 BSC
3.75
E
3.80
0.197 BSC
3.85
0.148
6.00 BSC
0.150
0.152
0.236 BSC
E1
2.62
2.67
2.72
0.103
0.105
0.107
E2
0.87
0.92
0.97
0.034
0.036
0.038
e
1.27 BSC
0.005 BSC
K
0.45 TYP.
0.018 TYP.
K1
0.66 TYP.
0.026 TYP.
L
0.43 BSC
0.017 BSC
L3
0.23 BSC
0.009 BSC
z
0.34 BSC
0.013 BSC
ECN: C11-1242-Rev. A, 07-Nov-11
DWG: 6005
Revision: 07-Nov-11
1
Document Number: 63656
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAIR® 6 x 5
7.080
(0.279)
2.720
(0.107)
8.080
(0.318)
5.820
(0.229)
0.407
(0.016)
0.567
(0.022)
1.960
(0.077)
(0,0)
2.185
(0.086)
2.153
(0.085)
3.260
Pin 1 (0.128)
0.616
(0.024)
3.920
(0.154)
0.970
(0.038)
0.700
(0.028)
1.270
(0.050)
0.407
(0.016)
0.560
(0.022)
Recommended Minimum Pad
Dimensions in mm (inches)
Document Number: 67480
Revision: 13-Jan-11
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1
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000