Ordering number : ENN6303 CMOS IC LC35V256EM, ET-70W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview Package Dimensions The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Control inputs include OE for fast memory access and CE for power saving and device selection. This makes these devices optimal for systems that require low power or battery backup, and makes memory expansion easy. The ultralow standby current allows these devices to be used with capacitor backup as well. unit: mm 3187A-SOP28D [LC35V256EM-70W] 1.0 9.8 8.4 11.8 0.15 15 28 1 14 18.0 0.1 2.3 Features 0.4 1.27 SANYO: SOP28D unit: mm 3221-TSOP28 (Type I) [LC35V256ET-70W] 8 0.5 13.4 11.8 21 28 1 0.55 8.1 7 0.2 0.125 0.08 22 1.27max • Supply voltage range: 3.0 to 3.6 V • Access time: 70 ns (maximum) • Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C) • Operating temperature: –10 to +70°C • Data retention voltage: 2.0 to 3.6 V • All I/O levels: CMOS compatible (0.8 VCC, 0.2 VCC) • Input/output shared function pins, 3-state output pins • No clock required (fully static circuits) • Package 28-pin SOP (450 mil) plastic package: LC35V256EM-70W 28-pin TSOP (8 × 13.4 mm) plastic package: LC35V256ET-70W SANYO: TSOP28 (Type I) Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12800RM (OT) No. 6303-1/6 LC35V256EM, ET70W Pin Assignment (Top view) SOP28 TSOP28 A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O8 I/O1 11 18 I/O7 I/O2 12 17 I/O6 I/O3 13 16 I/O5 GND 14 15 I/O4 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O8 I/O7 I/O6 I/O5 I/O4 GND I/O3 I/O2 I/O1 A0 A1 A2 LC35V256ET-70W LC35V256EM-70W Block Diagram A6 A9 A10 A11 A12 Row decoder A8 Address buffer A7 VCC Memory cell array 512 × 512 GND A13 I/O8 Input data control circuit I/O1 Input data buffer A14 Column I/O circuit Output data buffer Column decoder Address buffer A0 A1 A2 A3 A4 A5 CE WE OE No. 6303-2/6 LC35V256EM, ET70W Pin Functions A0 to A14 Address input WE Read/write control input OE Output enable input CE Chip enable input I/O1 to I/O8 Data I/O VCC, GND Power supply, ground Function Table Mode CE OE WE I/O Read cycle L L H Data output Supply current ICCA Write cycle L X L Data input ICCA Output disable L H H High impedance ICCA Unselected H X X High impedance ICCS Note: X indicates H or L. Specifications Absolute Maximum Ratings Parameter Maximum supply voltage Symbol Conditions Ratings VCC max Unit 4.6 V V Input pin voltage VIN –0.3* to VCC + 0.3 I/O pin voltage VI/O –0.3 to VCC + 0.3 V Operating temperature Topr –10 to +70 °C Storage temperature Tstg –55 to +125 °C Note: * The minimum value is –2.0 V for pulse widths under 30 ns. I/O Capacitances at Ta = 25°C, f = 1 MHz Parameter I/O pin capacitance Input pin capacitance Symbol Conditions Ratings min typ Unit max CI/O VI/O = 0 V 6 10 pF CI VIN = 0 V 6 10 pF Note: All units are not tested; only samples are tested. DC Allowable Operating Ranges at Ta = –10 to +70°C, VCC = 3.0 to 3.6 V Parameter Supply voltage Input voltage Symbol Conditions Ratings min typ Unit max VCC 3.0 3.6 V VIH 0.8VCC VCC + 0.3 V VIL –0.3* 0.2VCC V 3.3 Note: * The minimum value is –2.0 V for pulse widths under 30 ns. No. 6303-3/6 LC35V256EM, ET70W DC Electrical Characteristics at Ta = –10 to +70°C, VCC = 3.0 to 3.6 V Parameter Symbol Input leakage current Output leakage current Output high-level voltage Output low-level voltage Operating current drain CMOS inputs VCC – 0.2 V/ 0.2 V inputs Standby mode Ratings Conditions min Unit max ILI VIN = 0 to VCC –1.0 +1.0 µA ILO VCE = VIH or VOE = VIH or VWE = VIL VI/O = 0 to VCC –1.0 +1.0 µA VOH1 IOH1 = –2.0 mA VCC – 0.4 VOH2 IOH2 = –100 µA VCC – 0.1 VOL1 IOL1 = 2.0 mA 0.4 VOL2 IOL2 = 100 µA 0.4 V ICCA2 VCE = VIL, II/O = 0 mA, VIN = VIH or VIL 1.2 mA ICCA3 VCE = VIL, VIN = VIH or VIL II/O = 0 mA, DUTY 100 % ICCS1 VCE ≥ VCC – 0.2 V, VIN = 0 to VCC current drain CMOS inputs typ ICCS2 V V V min cycle 20 25 mA 1 µs cycle 1.5 2.5 mA Ta ≤ 25°C 0.01 µA Ta ≤ 60°C 0.8 µA Ta ≤ 70°C 4.0 µA 0.4 mA VCE = VIH, VIN = 0 to VCC Note: * Reference values when VCC = 3.3 V and Ta = 25°C. AC Electrical Characteristics at Ta = –10 to +70°C, VCC = 3.0 to 3.6 V AC test conditions Input pulse voltage levels: 0.2 VCC to 0.8 VCC Input rise and fall times: 5 ns Input and output timing levels: 1/2 VCC Output load: 30 pF (including the jig capacitance) Read Cycle Parameter Symbol min max Unit 70 ns Read cycle time tRC Address access time tAA 70 ns CE access time tCA 70 ns OE access time tOA 50 ns Output hold time tOH 10 CE output enable time tCOE 10 ns OE output enable time tOOE 5 ns ns CE output disable time tCOD 35 ns OE output disable time tOOD 30 ns Write Cycle Parameter Symbol min max Unit Write cycle time tWC 70 ns Address setup time tAS 0 ns ns Write pulse width tWP 55 CE setup time tCW 60 ns Write recovery time tWR 0 ns CE write recovery time ns tWR1 0 Data setup time tDS 50 ns Data hold time tDH 0 ns CE data hold time tDH1 0 ns WE output enable time tWOE 5 WE output disable time tWOD ns 35 ns No. 6303-4/6 LC35V256EM, ET70W Timing Charts [Read cycle] *1 tRC A0 to A14 tAA tOH tCA CE tCOD tCOE tOA OE tOOE tOOD *5 DOUT1 to 8 Output data valid [Write cycle 1] (WE write) *6 tWC A0 to A14 tCW *4 CE tAS tWP *3 tWR WE tWOE tWOD *5 DOUT1to 8 *7 tDS DIN1 to 8 tDH Data in stable *2 *2 [Write cycle 2] (CE write) *6 tWC A0 to A14 tAS tCW *4 CE tWR1 tWP *3 WE *5 DOUT1to 8 High impedance tDS DIN1 to 8 tDH1 Data in stable No. 6303-5/6 LC35V256EM, ET-70W Notes:1. WE must be held at the high level during the read cycle. 2. Do not apply reverse phase signals to the DOUT pins when those pins are in the output state. 3. The time tWP is the period when both CE and WE are low. It is defined as the time from the fall of WE to the rise of CE or WE, whichever occurs first. 4. The time tCW is the period when both CE and WE are low. It is defined as the time from the fall of CE to the rise of CE or WE, whichever occurs first. 5. The DOUT pins will be in the high-impedance state if any one of the following is held: OE is at the high level, CE is at the high level, or WE is at the low level. 6. The OE pin must be either held high or held low during the write cycle. 7. DOUT has the same phase as the write data during this write cycle. Data Retention Characteristics at Ta = –10 to +70°C Parameter Symbol Data retention supply voltage VDR Chip enable setup time tCDR Chip enable hold time tR Conditions min VCE ≥ VCC – 0.2 V max 2.0 3.6 Unit V 0 ns tRC* ns Note: * tRC: Read cycle time Data Retention Waveforms (CE control) tCDR Data retention mode tR VCC 3.0 V VIH VDR VCE GND VCE ≥ VCC – 0.2 V Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice. PS No. 6303-6/6