BUL1603ED ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ ■ ■ ■ INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED APPLICATIONS TWO LAMPS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING 277 VAC IN PUSH-PULL CONFIGURATION ■ DESCRIPTION The BUL1603ED is a new device designed for fluorescent electronic ballast 277 VAC push-pull applications. This device can be used without baker clamp and transil protection, reducing greatly the component count. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0; I CES = 10 mA; ) Collector-Emitter Voltage (V BE = 0; I CES = 100 µA; ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature September 2002 Value 1600 Unit V 1550 V 650 11 3 6 2 4 80 -65 to 150 150 V V A A A A W o C o C 1/6 BUL1603ED THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.56 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CES Collector Cut-off Current (V BE = 0) V CE = 1550 V 100 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 9 V 100 µA Collector-Emitter Breakdown Voltage (V BE = 0) I C = 10 mA I C = 100 µA V (BR)CES Parameter V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions I C = 100 mA V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 10 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A I C = 0.25 A V BE(sat) ∗ Base-Emitter Saturation Voltage DC Current Gain h FE ∗ td tr ts tf E ar RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time Repetitive Avalanche Energy Typ. 1600 1550 V V 650 V 18 V I B = 0.25 A I B = 0.025 A 1.5 1.5 V V IC = 1 A I B = 0.25 A 1.2 V I C = 5 mA I C = 0.4 A IC = 1 A V CE = 10 V V CE = 3 V V CE = 1.5 V I C = 0.5 A I B1 = 0.05 A D.C. = 2% (see figure 1) V CC = 125 V I B2 = -0.25 A P.W. = 300 µs L = 2 mH V CC = 50 V (see figure 2) C = 1.8 nF V BE = -5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 L = 25 mH Min. 11 18 15 4 40 0.3 0.8 1.2 0.35 6 µs µs µs µs mJ BUL1603ED Safe Operating Area Derating Curve Output Characteristics DC Current Gain DC Current Gain Collector Emitter Saturation Voltage 3/6 BUL1603ED Base Emitter Saturation Voltage Figure 1: Resistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor Figure 2: Energy Rating Test Circuit 4/6 BUL1603ED TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 5/6 BUL1603ED Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6