BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A ■ ■ ■ ■ ■ ■ ■ V DSS R DS( on) ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID I DM Parameter Value Unit 100 V Drain- gate Voltage (R GS = 20 kΩ) 100 V Gate-source Voltage ± 20 V Drain Current (continuous) at T c = 25 C 11 A Drain Current (pulsed) 44 A Drain-source Voltage (V GS = 0) o o P tot Total Dissipation at Tc = 25 C T stg Storage Temperature Tj Max. Operating Junction Temperature DIN Humidity Category (DIN 40040) IEC Climatic Category (DIN IEC 68-1) June 1993 70 W -65 to 175 o C 175 o C E 55/150/56 1/7 BUZ72A THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 2.14 62.5 o C/W C/W AVALANCHE CHARACTERISTICS Symbol Parameter Value Unit IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 11 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 36 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 9 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 7 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VG S = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 100 Unit V Tj = 125 oC V GS = ± 20 V 250 1000 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance ID = 250 µA V GS = 10 V Min. Typ. Max. Unit 2 2.9 4 V 0.23 0.25 Ω Min. Typ. Max. Unit 2.7 4.5 ID = 5 A DYNAMIC Symbol gfs (∗) C iss C oss C rss Parameter Test Conditions Forward Transconductance V DS = 25 V ID = 5 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VG S = 0 S 330 90 25 450 120 40 pF pF pF Typ. Max. Unit 10 50 25 20 15 75 40 30 ns ns ns ns SWITCHING Symbol t d(on) tr t d(off ) tf 2/7 Parameter Turn-on Time Rise Time Turn-off Delay Time Fall Time Test Conditions V DD = 50 V R GS = 4.7 Ω I D = 5.5 A V GS = 10 V Min. BUZ72A ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD M Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 22 A Reverse Recovery Time Reverse Recovery Charge I SD = 11 A V DD = 20 V IS D t rr Q rr Min. Typ. VG S = 0 di/dt = 100 A/µs T j = 150 o C Max. Unit 11 44 A A 1.6 V 80 ns 0.22 µC (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance Derating Curve Output Characteristics 3/7 BUZ72A Transfer Characteristics Transconductance Static Drain-Source On Resistance Maximum Drain Current vs Temperature Gate Charge vs Gate-Source Voltage Capacitance Variation 4/7 BUZ72A Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-Drain Diode Forward Characteristics 5/7 BUZ72A TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 6/7 BUZ72A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 7/7