STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS(on) ID STU8NA80 800 V < 1.0 Ω 8.3 A ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD. 1 2 3 Max220TM DESCRIPTION The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR Parameter Value Unit Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 kΩ) 800 V Gate-source Voltage ± 30 V ID Drain Current (continuous) at T c = 25 o C 8.3 A ID Drain Current (continuous) at T c = 100 o C 5.3 A 33.2 A V GS I DM (•) P tot T stg Tj Drain Current (pulsed) o Total Dissipation at T c = 25 C 160 W Derating Factor 1.28 W/ o C Storage Temperature Max. Operating Junction Temperature -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area March 1996 1/5 STU8NA80 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 0.78 62.5 0.5 300 C/W oC/W o C/W o C Max Value Unit 8 A 320 mJ Max Max Typ AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 50 V) EAR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 14 mJ I AR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 5.3 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VGS = 0 Min. Typ. Max. 800 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 I GSS Gate-body Leakage Current (V DS = 0) Unit V 250 1000 µA µA ± 100 nA Typ. Max. Unit 3 3.75 V 0.85 1 2 Ω Ω T c = 125 o C V GS = ± 30 V ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS R DS(on) Static Drain-source On Resistance ID(on) ID = 250 µA V GS = 10V I D = 4A V GS = 10V I D = 4A Min. 2.25 T c = 100 o C On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 8.3 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 4 A V GS = 0 Min. Typ. 7 9.5 2900 290 80 Max. Unit S 3800 370 110 pF pF pF STU8NA80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Test Conditions Turn-on Time Rise Time V DD = 400 V R G = 4.7 Ω Turn-on Current Slope V DD = 640 V R G = 47 Ω Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V Min. ID = 4 A V GS = 10 V ID = 8 A V GS = 10 V ID = 8 A Typ. Max. Unit 37 45 50 60 ns ns 120 V GS = 10 V A/µs 115 15 55 150 nC nC nC Typ. Max. Unit 45 15 70 60 20 91 ns ns ns Typ. Max. Unit 8.3 33.2 A A 1.6 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 640 V R G = 4.7 Ω Min. ID = 8 A V GS = 10 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 8.3 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 8 A V DD = 100 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs T j = 150 o C 765 ns 13.4 µC 35 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STU8NA80 Max220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.3 TYP. 4.6 0.169 TYP. MAX. 0.181 A1 2.2 2.4 0.087 0.094 A2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 0.626 0.641 D 15.9 16.3 D1 9 9.35 0.354 0.368 D2 0.8 1.2 0.031 0.047 D3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 E 10.05 10.35 0.396 0.407 L 13.2 13.6 0.520 0.535 L1 3 3.4 0.118 0.133 D1 D2 A1 A2 A C D3 b b2 b1 D e E L1 L P011R 4/5 STU8NA80 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5