VISHAY UFB200CB40P

UFB200CB40P
Vishay High Power Products
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
FEATURES
• Not insulated package
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Optimized for power conversion: welding and industrial
SMPS applications
• Plug-in compatible with other SOT-227 packages
SOT-227
• Easy to assemble
• Direct mounting to heatsink
Anode
1
Anode
2
3
• Compliant to RoHS directive 2002/95/EC
4
• Designed and qualified for industrial level
DESCRIPTION
The UFB200CB40P not insulated modules integrate two
state of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The planar structure of
the diodes, and the platinum doping life time control, provide
a ultrasoft recovery current shape, together with the
best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not to
be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
Base common cathode
PRODUCT SUMMARY
VR
400 V
IF(AV) at TC = 146 °C per module (1)
200 A
trr
89 ns
Note
(1) All 4 anode terminals connected
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
TEST CONDITIONS
VR
Continuous forward current per diode
IF
Single pulse forward current per diode
Maximum power dissipation per module
Operating junction and storage temperatures
(1)
MAX.
UNITS
400
V
TC = 140 °C
142
IFSM (2)
TC = 25 °C
1300
PD
TC = 140 °C
TJ, TStg
A
368
W
- 55 to 175
°C
Notes
(1) Both anode terminals connected;
Maximum IRMS current per leg 200 A to do not exceed the maximum temperature of terminals, see fig. 6
(2) 10 ms sine or 6 ms rectangular pulse
Document Number: 94276
Revision: 16-Jul-09
For technical questions, contact: [email protected]
www.vishay.com
1
UFB200CB40P
Vishay High Power Products
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage
SYMBOL
VBR
VFM
Reverse leakage current
IRM
Junction capacitance
CT
TEST CONDITIONS
IR = 100 µA
MIN.
TYP.
MAX.
400
-
-
IF = 100 A
-
1.11
1.34
IF = 100 A, TJ = 125 °C
-
0.99
1.1
UNITS
V
IF = 200 A
-
1.3
1.6
IF = 200 A, TJ = 125 °C
-
1.22
1.4
VR = VR rated
-
-
50
µA
TJ = 175 °C, VR = VR rated
-
-
4
mA
VR = 400 V
-
100
-
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
SYMBOL
trr
IRRM
Qrr
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 400 A/µs, VR = 30 V
TEST CONDITIONS
-
39
-
TJ = 25 °C
-
89
136
TJ = 125 °C
-
184
235
-
9
12
-
20
25
TJ = 25 °C
-
400
815
TJ = 125 °C
-
1840
2940
MIN.
TYP.
MAX.
-
-
0.19
-
-
0.095
IF = 50 A
dIF/dt = 200 A/µs
VR = 100 V
TJ = 25 °C
TJ = 125 °C
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
SYMBOL
TEST CONDITIONS
RthJC
°C/W
-
0.05
-
Weight
-
30
-
g
Mounting torque
-
1.3
-
Nm
Case to heatsink, per module
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2
RthCS
Flat, greased surface
UNITS
For technical questions, contact: [email protected]
Document Number: 94276
Revision: 16-Jul-09
UFB200CB40P
Vishay High Power Products
1000
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
100
TJ = 175 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
0
50
100
150
200
250
300
350
400
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
10
100
1000
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
Single pulse
(thermal resistance)
0.01
0.0001
0.001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode)
Document Number: 94276
Revision: 16-Jul-09
For technical questions, contact: [email protected]
www.vishay.com
3
UFB200CB40P
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
180
250
160
230
140
210
DC
120
100
80
Square wave (D = 0.50)
80 % rated VR applied
60
TJ = 125 °C
170
150
130
110
40
TJ = 25 °C
90
20
70
See note (1)
0
0
40
50
100
80 120 160 200 240 280 320 360 400
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
350
4000
300
3500
VR = 100 V
IF = 50 A
TJ = 125 °C
3000
250
Qrr (nC)
Average Power Loss (W)
VR = 100 V
IF = 50 A
190
trr (ns)
Allowable Case Temperature (°C)
Vishay High Power Products
200
RMS limit
150
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
DC
50
2000
1500
TJ = 25 °C
1000
500
0
100
0
0
2500
20 40 60 80 100 120 140 160 180 200 220
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt
50
VR = 100 V
IF = 50 A
40
IRR (A)
TJ = 125 °C
30
20
TJ = 25 °C
10
0
100
1000
dIF/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions, contact: [email protected]
Document Number: 94276
Revision: 16-Jul-09
UFB200CB40P
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
Vishay High Power Products
VR = 200 V
0.01 Ω
L = 70 µH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Document Number: 94276
Revision: 16-Jul-09
For technical questions, contact: [email protected]
www.vishay.com
5
UFB200CB40P
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
UF
B
200
C
B
40
P
1
2
3
4
5
6
7
1
-
Ultrafast rectifier
2
-
Ultrafast Pt diffused
3
-
Current rating (200 = 200 A)
4
-
Circuit configuration (2 common cathode diodes)
5
-
Package indicator (SOT-227 standard not insulated)
6
-
Voltage rating (40 = 400 V)
7
-
P = Lead (Pb)-free
Quantity per tube is 10 pcs, M4 screw and washer included
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
Packaging information
www.vishay.com/doc?95037
www.vishay.com
6
For technical questions, contact: [email protected]
Document Number: 94276
Revision: 16-Jul-09
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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