VISHAY UFB200FA20P

UFB200FA20P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 240 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(VISOL = 2500 VAC)
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The UFB200FA20P insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The planar structure
of the diodes, and the platinum doping life time control,
provide a ultrasoft recovery current shape, together with
the best overall performance, ruggedness and reliability
characteristics.
PRODUCT SUMMARY
VR
200 V
IF(AV) at TC = 90 °C
240 A
trr
45 ns
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
200
V
Cathode to anode voltage
VR
Continuous forward current per diode
IF
TC = 90 °C
120
Single pulse forward current per diode
IFSM
TC = 25 °C
1700
PD
TC = 90 °C
240
Maximum power dissipation per module
RMS isolation voltage
VISOL
Operating junction and storage temperatures
Document Number: 94087
Revision: 21-Jul-10
TJ, TStg
Any terminal to case, t = 1 minute
A
W
2500
V
- 55 to 150
°C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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UFB200FA20P
Insulated Ultrafast
Rectifier Module, 240 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Cathode to anode breakdown voltage
VBR
Forward voltage
VFM
Reverse leakage current
IRM
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 120 A
-
-
1.1
IF = 120 A, TJ = 150 °C
-
-
0.95
IR = 100 μA
UNITS
V
VR = VR rated
-
-
50
μA
TJ = 150 °C, VR = VR rated
-
-
2
mA
VR = 200 V
-
200
-
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
MIN.
TYP.
MAX.
-
-
45
TJ = 25 °C
-
34
-
TJ = 125 °C
-
58
-
TJ = 25 °C
TJ = 125 °C
IF = 150 A
dIF/dt = 200 A/μs
VR = 160 V
-
5.1
-
-
10.3
-
TJ = 25 °C
-
87
-
TJ = 125 °C
-
300
-
MIN.
TYP.
MAX.
-
-
0.5
-
-
0.25
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
Junction to case, both leg conducting
TEST CONDITIONS
RthJC
°C/W
-
0.05
-
Weight
-
30
-
g
Mounting torque
-
1.3
-
Nm
Case to heatsink
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2
RthCS
Flat, greased surface
UNITS
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94087
Revision: 21-Jul-10
UFB200FA20P
1000
Vishay Semiconductors
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Insulated Ultrafast
Rectifier Module, 240 A
100
TJ = 150 °C
TJ = 25 °C
10
1
TJ = 150 °C
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1.0
1.2
100
0
1.4
200
400
300
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
10 000
1000
TJ = 25 °C
100
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1
PDM
0.1
Single pulse
(thermal resistance)
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.01
0.0001
0.001
0.01
0.1
1
.
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode)
Document Number: 94087
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
UFB200FA20P
Insulated Ultrafast
Rectifier Module, 240 A
Vishay Semiconductors
70
140
VR = 160 V
TJ = 125 °C
TJ = 25 °C
60
130
50
120
trr (ns)
Allowable Case Temperature (°C)
150
DC
110
100
Square wave (D = 0.50)
Rated VR applied
90
40
30
IF = 150 A
IF = 75 A
20
80
See note (1)
10
100
70
0
20
40
60
80
100
120
140
160
1000
dIF/dt (A/µs)
IF(AV) - Average Forward Current (A)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Avarage Forward Current (Per Leg)
900
150
700
VR = 160 V
TJ = 125 °C
TJ = 25 °C
600
IF = 150 A
IF = 75 A
120
RMS limit
90
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
60
30
DC
20
40
60
80
100
120
140
500
400
300
200
100
0
0
Qrr (nC)
Average Power Loss (W)
800
160
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
0
100
1000
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94087
Revision: 21-Jul-10
UFB200FA20P
Insulated Ultrafast
Rectifier Module, 240 A
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94087
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
UFB200FA20P
Insulated Ultrafast
Rectifier Module, 240 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
UF
B
200
F
A
20
P
1
2
3
4
5
6
7
1
-
Ultrafast rectifier
2
-
Ultrafast Pt diffused
3
-
Current rating (200 = 200 A)
4
-
Circuit configuration (2 separate diodes, parallel pin-out)
5
-
Package indicator (SOT-227 standard isolated base)
6
-
Voltage rating (20 = 200 V)
7
-
None = Standard production
P = Lead (Pb)-free
Quantity per tube is 10, M4 screw and washer included
CIRCUIT CONFIGURATION
1
4
2
3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
Packaging information
www.vishay.com/doc?95037
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94087
Revision: 21-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A3
4
6.25 (0.246)
12.50 (0.492)
25.70 (1.012)
25.20 (0.992)
-B-
1
2
R full
7.50 (0.295)
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
0.25 (0.010) M C A M B M
2.10 (0.082)
1.90 (0.075)
-C-
12.30 (0.484)
11.80 (0.464)
0.12 (0.005)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact: [email protected]
www.vishay.com
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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