VS-30MQ040-M3 Vishay Semiconductors Schottky Rectifier, 3 A FEATURES Cathode • Extremely low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition • Surface mountable • Compact size • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC Anode SMA PRODUCT SUMMARY Package SMA IF(AV) 3A VR 40 V VF at IF 0.46 V APPLICATIONS IRM 20 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 6.0 mJ • • • • • • • Switching power supplies Meter protection Reverse protection for power input to PC board circuits Battery isolation and charging Low threshold voltage diode Freewheeling or by-pass diode Low voltage clamp DESCRIPTION The VS-30MQ040-M3 Schottky rectifier is designed to be used for low power applications where a reverse voltage of 40 V is encountered and surface mountable is required. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS 3 A DC VRRM IFSM tp = 5 μs sine VF 2 Apk, TJ = 125 °C TJ Range 40 V 330 A 0.43 V - 40 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-30MQ040-M3 UNITS 40 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS 50 % duty cycle at TL = 89 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) VALUES UNITS 3 A Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 12 mH 6.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Document Number: 93354 Revision: 10-Sep-10 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 330 A 140 www.vishay.com 1 VS-30MQ040-M3 Schottky Rectifier, 3 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop See fig. 1 VFM (1) 1A Threshold voltage IRM VF(TO) TJ = 25 °C Typical junction capacitance CT VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz LS Measured lead to lead 5 mm from package body Typical series inductance dV/dt 0.46 0.5 mA 20 TJ = TJ maximum rt V 0.34 VR = Rated VR Forward slope resistance Maximum voltage rate of change 0.51 TJ = 125 °C TJ = 125 °C UNITS 0.42 TJ = 25 °C 3A 3A Maximum reverse leakage current See fig. 2 VALUES 0.26 V 64.6 m 134 pF 2.0 nH 10 000 V/μs VALUES UNITS - 40 to 150 °C 80 °C/W Rated VR Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to ambient RthJA TEST CONDITIONS DC operation Approximate weight Marking device Case style SMA (similar D-64) 0.07 g 0.002 oz. 3F Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93354 Revision: 10-Sep-10 VS-30MQ040-M3 Schottky Rectifier, 3 A 150 Allowable Case Temperature (°C) IF - Instantaneous Forward Current (A) 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.1 0.2 140 DC 130 120 110 100 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 90 80 70 60 50 40 30 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.5 1.0 1.5 2.0 2.5 3.0 IF(AV) - Average Forward Current (A) Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 1 - Maximum Forward Voltage Drop Characteristics 100 1.6 10 Average Power Loss (W) TJ = 150 °C IR - Reverse Current (mA) Square wave (D = 0.50) 80 % rated VR applied See note (1) VFM - Forward Voltage Drop (V) TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 1.4 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.2 1.0 RMS limit 0.8 0.6 0.4 DC 0.2 TJ = 25 °C 0 0.001 0 5 10 20 15 25 30 35 0 40 TJ = 25 °C 10 5 10 15 20 25 30 35 40 45 IFSM - Non-Repetitive Surge Current (A) 1000 0 1.0 1.5 2.0 2.5 3.0 Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage 100 0.5 IF(AV) - Average Forward Current (A) VR - Reverse Voltage (V) CT - Junction Capacitance (pF) Vishay Semiconductors 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 VR - Reverse Voltage (V) tp - Square Wave Pulse Duration (µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Document Number: 93354 Revision: 10-Sep-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-30MQ040-M3 Schottky Rectifier, 3 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 M Q 040 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product suffix 2 - Current rating 3 - M = SMA 4 - Q = Schottky “Q” series 5 - Voltage rating (040 = 40 V) 6 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-30MQ040-M3/5AT PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5AT 7500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95400 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93354 Revision: 10-Sep-10 Outline Dimensions Vishay Semiconductors SMA DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode band Mounting Pad Layout 0.074 (1.88) MAX. 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.066 (1.68) MIN. 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 95400 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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