SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS .. .. .. . PRELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION P OUT = 1.5 W MIN. WITH 9.5 dB GAIN .280 4L STUD (M122) epoxy sealed ORDER CODE SD5000 BRANDING S10A015 PIN CONNECTION DESCRIPTION The SD5000 is a NPN Silicon Transistor designed for high gain linear performance at 1000 MHz. This part uses gold metallized die and polysilicon site ballasting to achieve high reliability and ruggedness. The SD5000 can be used for applications such as Telecommunications, Radar, ECM, Space and other commercial and military systems. 1. Collector 2. Emitter 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCES Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 3.5 V Device Current 1.0 A Power Dissipation 7.0 W IC PDISS TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 25 °C/W THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1/4 SD5000 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Valu e Test Conditions Min. Typ. Max. Unit BVCBO IC = 10mA 50 — — V BVEBO IE = 5mA 3.5 — — V BVCES IC = 10mA 50 — — V BVCEO IC = 5mA 23 — — V ICBO VCB = 28V — 0.2 — mA hFE VCE = 5V 18 — 200 — IC = 100mA DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT 1dB f = 1 GHz VCC = 20 V IC = 220 mA 1.5 — — W GP f = 1 GHz VCC = 20 V IC = 220 mA 9.5 — — dB VSWR f = 1 GHz VCC = 20 V IC = 220 mA — — 25:1 — COB f = 1 MHz VCB = 20 V — — 4.0 pF : 2/4 SD5000 IMPEDANCE DATA FREQ. 1000 MHz Z IN (Ω) 4.0 + j 3.3 ZCL (Ω) 20.8 + j 33.3 TEST CIRCUIT B1, B2 : Ferrite Beads C1,C2 C3 C4 C5,C6 C7,C8 : 120 pF Chip Capacitor : .4 - 2.5 pF Johanson Capacitor : .8 - 8 pF Johanson Capacitor : 220 pF Chip Capacitor C9,C10 : 1000 pF Chip Capacitor C11 : .1µF Capacitor C12,C13 : 15,000 pF EMI Filter L1,L2 : 5 Turn Choke; Wire Diameter .025”, I.D. 0.125” Substrate material: Er = 10.2, H = .050”, 1oz. Copper 3/4 SD5000 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0122 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4