STF2222A ® SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ Type Marking STF2222A 20F SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS STF2907A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE SOT-89 ■ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Emitter Voltage (I E = 0) Parameter 75 V V CEO Collector-Emitter Voltage (I B = 0) 40 V V EBO Emitter-Base Voltage (I C = 0) 6 V A Collector Current 0.6 I CM Collector Peak Current (t p < 5 ms) 0.8 A P tot Total Dissipation at T amb = 25 o C 1.2 W T stg Storage Temperature IC Tj Max. Operating Junction Temperature February 2003 -65 to 150 o C 150 o C 1/5 STF2222A THERMAL DATA R thj-amb • Thermal Resistance Junction-Ambient Max o 104.1 C/W • Device mounted on a PCB area of 1 cm . 2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEX Collector Cut-off Current (V BE = -3 V) V CE = 60 V 10 nA I BEX Base Cut-off Current (V BE = -3 V) V CE = 60 V 20 nA I CBO Collector Cut-off Current (I E = 0) V CB = 75 V V CB = 75 V 10 10 nA µA I EBO Emitter Cut-off Current (I C = 0) V EB = 3 V 15 nA T j = 150 o C V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA 40 V V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) I C = 10 µA 75 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 10 µA 6 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA V BE(sat) ∗ Collector-Base Saturation Voltage I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA 0.6 DC Current Gain IC IC IC IC IC IC V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 1 V V CE = 10 V 35 50 75 100 50 40 h FE ∗ fT 0.1 mA 1 mA 10 mA 150 mA 150 mA 500 mA V V 1.2 2 V V 300 Transition Frequency I C = 20 mA V CE = 20V f = 100MHz C CBO Collector-Base Capacitance IE = 0 C EBO Emitter-Base Capacitance IC = 0 NF Noise Figure I C = 0.1 mA V CE = 10 V ∆f = 200 Hz R G = 1 KΩ hie ∗ Input Impedance V CE = 10 V V CE = 10 V I C = 1 mA I C = 10 mA f = 1 KHz f = 1 KHz h re ∗ Reverse Voltage Ratio V CE = 10 V V CE = 10 V I C = 1 mA I C = 10 mA f = 1 KHz f = 1 KHz hfe ∗ Small Signal Current Gain V CE = 10 V V CE = 10 V I C = 1 mA I C = 10 mA f = 1 KHz f = 1 KHz 50 75 300 375 h oe ∗ Output Admittance V CE = 10 V V CE = 10 V I C = 1 mA I C = 10 mA f = 1 KHz f = 1 KHz 5 25 35 200 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/5 = = = = = = 0.3 1 V CB = 10 V VEB = 0.5 V 270 f = 1 MHz f = 1MHz MHz 4 8 pF 20 25 pF 4 f = 1 KHz 2 0.25 dB 8 1.25 KΩ KΩ 8 4 10 -4 10 -4 µS µS STF2222A ELECTRICAL CHARACTERISTICS (Continued) Symbol Parameter td Delay Time tr Rise Time ts Storage Time tf Fall Time Test Conditions I C = 150 mA V CC = 30 V I C = 150 mA V CC = 30 V I B = 15 mA I B1 = - I B2 = 15 mA Min. Typ. Max. Unit 5 10 ns 12 25 ns 185 225 ns 24 60 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 3/5 STF2222A SOT-89 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 1.4 1.6 55.1 63.0 B 0.44 0.56 17.3 22.0 B1 0.36 0.48 14.2 18.9 C 0.35 0.44 13.8 17.3 C1 0.35 0.44 13.8 17.3 D 4.4 4.6 173.2 181.1 D1 1.62 1.83 63.8 72.0 E 2.29 2.6 90.2 102.4 e 1.42 1.57 55.9 61.8 e1 2.92 3.07 115.0 120.9 H 3.94 4.25 155.1 167.3 L 0.89 1.2 35.0 47.2 P025H 4/5 STF2222A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5