STMICROELECTRONICS STM915-16

STM915-16

RF POWER MODULE
GSM MOBILE APPLICATIONS
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LINEAR POWER AMPLIFIER
890-915 MHz
12.5 VOLTS
INPUT/OUTPUT 50 OHMS
POUT = 16 W MIN.
GAIN = 42 dB MIN.
DESCRIPTION
The STM915-16 is a linear power module
designed for 12.5 V applications in GSM Cellular
Radio Systems. The STM915-16 uses gold
metallized transistors with diffused emitter ballast
resistors for high linearity Class AB operation.
CASE H100
ORDER CODE
STM915-16
BRANDING
STM915-16
PIN CONNECTION
1 RF Input
2 8.0 Vdc
3 12.5 Vdc
4 8.0 Vdc
5 12.5 Vdc
6 RF Output
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol
Parameter
Value
Un it
Vdc
DC Supply Voltage
V S1, V S3
DC Supply Voltage
8.5
Vdc
V CONTROL DC Control Voltage
4.5
Vdc
mW
PI N
P OUT
1
T STG
TC
(RF applied/No RF applied)
15.6/30.0
V S2, V S4
RF Input Power
(P OUT ≤ 17 W)
3.0
RF Output Power
(VS2 ,VS4 = 12.5 V)
20
Storage T emperature
Operating Case Temperature
W
- 30 to + 100
o
C
- 30 to + 100
o
C
Note1: Pulse Width = 577 µsec.
Repetition rate = 4.6 msec.
June 1999
1/7
STM915-16
ELECTRICAL SPECIFICATIONS (Tcase = 25°C, VS1 , VS3 = 8.0 Vdc; VS2, VS4 = 12.5 Vdc)
Symb ol
Parameter
T est Con dition s
Value
Min.
BW
P OUT
η
Frequency Range
Output Power
Efficiency
1,2
1, 2
Typ .
890
V CONT = 4.0 Vdc
P IN = 1 mW
P OUT = 16 W
Unit
Max.
915
16
35
MHz
W
41
%
I Q1
Leakage Current,
V S1 , VS2
V CONT = 0 Vdc
PI N = 1 mW
0.5
2.0
mA
I Q2
Bias Current,
V S3
V CONT = 0 Vdc
PI N = 1 mW
140
150
mA
I Q3
Quiescent Current,
V S4
V CONT = 0 Vdc
PI N = 1 mW
200
250
mA
Control Dynamic
3
Range
V CONT = 0 to 4.0V
Isolation
V CONT = 0 Vdc
H
Harmonics
1, 2
VSWR I N Input VSW R
1,2
V CONT
Control Voltage
I CONT
Control Current
Tr
Rise Time
1, 2, 4
Noise Power
Stability
1, 2
Load Mismatch 1,2
56
V S2,
S4
dB
= 0 to 15.6V
P OUT = 42 dBm reference
P OUT = +13 dBm to +42 dBm
−14
dBm
−45
dBc
2.0:1
0
4.0
Vdc
1.0
2.0
mA
1.0
µSec
−70
−65
dBm
P OUT = +13 to +42 dBm
30 KHz Bandwidth, 20 MHz above f0
P OUT = +13 dBm to +42 dBm CW
P OUT = − 14 to +42 dBm
V S2 , V S4 = 10.8 to 15.6 V
Load VSWR = 6:1 Source VSW R = 3:1
All phase angles
TC = − 20 to +60° C
All Spurious outputs more
than 60dB below carrier
VSW R = 10:1 All phase angles
P OUT = 16 W
V = 15.6Vdc
No Degradation in Output
Power
Notes: 1) PIN = 1.0mW adjust VCONTROL for specified POUT .
2) Pulse Width = 577 µsec.
Repetition rate = 4.6 msec.
3) POUT (Reference) = 42 dBm
4)Tr measured at 1% to 81% of POUT in watts
REF. 1014655E
GSM SPECIFIC TESTS
Symbol
Parameter
T est Co nditions
Value
Min.
AM/AM Conversion
G ain
T yp.
Unit
Max.
PI N = fo (0 dBm)+[fo + 200 kHz (− 40 dBm)]
VCONTROL adjusted for
POUT = 13, 30, 42 dBm
POUT (f o + 200 kHz)
POUT (f o − 200 kHz)
AM/PM Conversion
2/7
POUT = +13 to + 42 dBm
PI N varied +/− .5 dB
− 40
− 45
dBc
dBc
4
°/dB
STM915-16
MODULE DC AND TEST FIXTURE CONFIGURATION
REF. 1015959E
3/7
STM915-16
TYPICAL PERFORMANCE
Output Power vs Frequency
Control Voltage, Efficiency & Input VSWR vs
Frequency
Control Voltage vs Case Temperature
Output Power vs Case Temperature
Output Power vs Control Voltage
4/7
STM915-16
APPLICATIONS RECOMMENDATIONS
OPERATION LIMITS
The STM915-16 power module should never be
operated under any condition which exceeds
the Absolute Maximum Ratings presented on
this data sheet. Nor should the module be
operated continuously at any of the specified
maximum ratings. If the module is to be
operated under any condition such that it may
be subjected to one or more of the maximum
rating conditions, care must be taken to monitor
other parameters which may be affected. For
example, a combination of high VS3 and input
overdrive could result in exceeding the
maximum output power rating; in this condition,
the output power must be maintained below the
maximum rating by use of the gain control pin.
GAIN CONTROL
The module output power should be limited to
20 watts (43 dBm). The module is designed to
be operated with VS1 and VS3 set to 8.0 Vdc,
VS2 and VS4 set to 12.5 Vdc and input power
set to 1.0 mW (0 dBm). Module gain is adjusted
by varying VCONTROL.
DECOUPLING
The bypassing internal to the module is
sufficient for the frequency range 90-1300 MHz.
Care should be taken to insure proper
decoupling for each application as the module
is capable of a wide range of operating
characteristics including ”linear” operation, in
which an important design criteria is the use of
appropriate bypassing. For bypassing low
frequencies while maintaining the electrical
specifications contained in this data sheet, use
of the decoupling network shown in the ”Module
DC and Test Fixture Configuration” diagram
herein is recommended.
The heatsink mounting surface under the module
should be flat to within ± 0.05 mm (± 0.002 inch).
The module should be mounted to the heatsink
using 3 mm (or 4-40) or equivalent screws
torqued to 5-6 kg-cm (4-6 in-lb).
The module leads are attached to the equipment
PC board using 180°C solder applied to the leads
with it properly grounded soldering iron trip, not to
exceed 195°C, applied a minimum of 2 mm
(0.080 inch) from the body of the module for a
duration not to exceed 15 seconds per lead. It is
imperative that no other portion of the module,
other than the leads, be subjected to
temperatures in excess of 100°C (maximum
storage temperature), for any period of time, as
the plastic moulded cover, internal components
and sealing adhesives may be adversely affected
by such conditions.
Due to the construction techniques and the
materials used within the module, reflow
soldering of the flange heatsink or leads, is not
recommended.
THERMAL CONSIDERATIONS
It will be necessary to provide a suitable heatsink
in order to maintain the module flange
temperature at or below the maximum case
operating temperature. In a case where the
module output power will be limited to +42 dBm
(16 W) and designing for the worst case
efficiency of 35%, the power dissipated by the
module will be 29.7 watts. The heatsink must be
designed such that the thermal rise will be less
than the difference between the maximum
ambient temperature at which the module will
operate and the maximum operating case
temperature of the module while dissipating 29.7
watts.
MODULE MOUNTING
To insure adequate thermal transfer from the
module to the heatsink, it is recommended that
a satisfactory thermal compound such as Dow
Corning 340, Wakefield 120-2 or equivalent be
applied between the module flange and the
heatsink.
5/7
STM915-16
H100 MECHANICAL DATA
DIM.
mm
TYP.
inch
A
MIN.
60.45
MAX.
60.83
MIN.
2.380
B
C
50.04
11.31
50.54
11.81
1.970
0.445
1.990
0.465
D
6.35
6.73
0.250
0.265
E
F
G
2.16
2.54
0.085
0.100
0.38
0.005
3.35
0.13
TYP.
MAX.
2.395
0.132
0.015
H
57.40
2.260
J
K
L
51.87
39.17
34.09
2.042
1.542
1.342
M
29.01
1.142
N
P
Q
16.31
8.69
0.642
0.342
0.38
0.64
0.015
0.025
R
3.05
3.30
0.120
0.130
S
13.59
14.09
0.535
0.555
V
W
4.49
6.78
5.51
7.06
0.177
0.267
0.217
0.278
1013762F
6/7
STM915-16
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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