TOSHIBA TLP206G

TLP206G
TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET
TLP206G
PBX
Modem･FAX Card
Measurement Instrument
Unit in mm
The TOSHIBA TLP206G consists of gallium arsenide infrared emitting
diode optically coupled to a photo−MOS FET in a 8 pin SOP.
The TLP206G is a 2−Form−A switch which is suitable for replacement of
mechanical relays in many application.
·
SOP 8 pin (2.54SOP8): 2−Form−A
·
Peak off−state voltage: 350V(min)
·
Trigger LED current: 3mA(max)
·
On−state current: 120mA(max)
·
On−state resistance: 35Ω(max)
·
Isolation voltage: 1500Vrms(min)
·
UL recognized: UL1577, file no.E67349
·
BSI approved: BS EN60065: 1994,certificate no.8273
BS EN60950: 1992,certificate no.8274
·
SEMKO approved: SS EN60065
SS EN60950
·
Option(V4)type
TUV approved: DIN VDE0884 / 06.92,
certificate No. R9850580
JEDEC
―
EIAJ
―
TOSHIBA
Weight: 0.2 g
Schematic
Pin Configuration (top view)
1
8
2
7
3
6
4
5
2-Form-A
1, 3
6, 8
8
1
2, 4
7
2
6
3
5, 7
5
4
1, 3: Anode
2, 4: Cathpde
5: Drain D1
6: Drain D2
7: Drain D3
8: Drain D4
1
2002-09-25
TLP206G
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
50
mA
∆IF / °C
-0.5
mA / °C
Pulse forward current (100µs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
VOFF
350
V
Forward current
LED
Forward current derating (Ta ≥ 25°C)
Detector
Off-state output terminal voltage
On-state current
On-state RMS current
derating(Ta ≥ 25°C)
Both channel
(Note 1)
One channel
Both channel
(Note 1)
100
ION
∆ION / °C
One channel
Junction temperature
mA
120
-1.0
mA / °C
-1.2
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-40~85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
BVS
1500
Vrms
Isolation voltage (AC, 1 min., R.H.≤ 60%)
(Note 2)
(Note 1): Two channels operating simultaneously.
(Note 2): Device considered a two-terminal device: Pins1,2,3 and 4 shorted
together and pins 5,6,7 and 8 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VDD
―
―
280
V
Forward current
IF
5
7.5
25
mA
On-state current
ION
―
―
100
mA
Operating temperature
Topr
-20
―
65
°C
2
2002-09-25
TLP206G
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
—
—
10
µA
Capacitance
CT
V = 0, f = 1 MHz
—
30
—
pF
Off-state current
IOFF
VOFF = 350 V
—
—
1
µA
Capacitance
COFF
V = 0,f = 1MHZ
—
40
—
pF
MIn.
Typ.
Max.
Unit
ION = 120 mA
—
1
3
mA
ION = 120 mA, IF = 5 mA
—
22
35
Ω
Min.
Typ.
Max.
Unit
—
0.8
—
pF
—
Ω
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Trigger LED current
IFT
On-state resistance
RON
Test Condition
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Capacitance input to output
CS
Isolation resistance
Test Condition
VS = 0, f = 1 MHz
RS
10
VS = 500 V, R.H. ≤ 60%
5×10
AC, 1 minute
Isolation voltage
BVS
14
10
1500
—
—
AC, 1 second, in oil
—
3000
—
DC, 1 minute, in oil
—
3000
—
Vdc
Min.
Typ.
Max.
Unit
—
0.3
1
—
0.1
1
Vrms
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Turn-on time
tON
Turn-off time
tOFF
Test Condition
RL = 200Ω
VDD = 20 V, IF = 5 mA
(Note 3)
ms
(Note 3): Switching time test circuit
IF
1, 3
6, 8
2, 4
5, 7
RL
VDD
IF
VOUT
VOUT
tON
3
90%
10%
tOFF
2002-09-25
TLP206G
IF – Ta
ION – Ta
140
Allowable MOSFET on-state current
ION(RMS) (mA)
Allowable forward current
IF (mA)
100
80
60
40
20
0
－20
0
20
60
40
100
80
120
100
80
60
40
20
0
－20
120
20
0
Ambient temperature Ta (°C)
IFP – DR
80
100
IF –VF
100
Pulse width ≤ 100µs
3000
50
Ta = 25°C
Ta = 25°C
(mA)
30
1000
500
Forward current IF
Allowable pulse forward current
IFP (mA)
60
Ambient temperature Ta (°C)
5000
300
100
50
30
10
3
40
10
5
3
1
0.5
0.3
10
－3
2
10－
3
1
10－
3
10
3
0.1
0.6
0
0.8
Duty cycle ratio DR
1.2
1.0
Forward voltage
∆VF / ∆Ta – IF
1.4
VF
1.6
1.8
2.6
3.0
(V)
IFP – VFP
1000
(mA)
IFP
－2.4
－2.0
Pulse forward current
Forward voltage temperature
coefficient ∆VF / ∆Ta (mV / °C)
－2.8
－1.6
－1.2
－0.8
500
300
100
50
30
10
5
Pulse width ≤ 10µs
3
Repetitive frequency = 100Hz
Ta = 25°C
－0.4
0.1
0.3 0.5
1
3
Forward current
5
IF
10
30
0
0.6
50
(mA)
1.0
1.4
1.8
2.2
Pulse forward voltage VFP
4
(V)
2002-09-25
TLP206G
IFT – Ta
ION – VON
150
(mA)
ION = 120mA
ION
4
MOSFET on-state current
Relative trigger LED current
IFT / IFT (Ta = 25°C)
5
3
2
1
0
－40
－20
0
20
40
60
80
Ta = 25°C
IF = 5mA
100
50
0
－50
－100
－150
－2.5
100
Ambient temperature Ta (°C)
RON – Ta
(mA)
30
VOFF = 350V
500
300
100
20
10
－20
0
20
40
60
80
50
30
10
5
3
1
－20
100
0
40
20
tON – Ta
VDD = 20V
RL = 200Ω
RL = 200Ω
tOFF (ms)
IF = 5ｍA
Turn-off time
600
400
200
0
－40
－20
0
20
40
100
tOFF – Ta
400
VDD = 20V
800
80
60
Ambient temperature Ta (°C)
1000
(ms)
(V)
ION
IF = 5mA
MOSFET off-state current
RON
(Ω)
ION = 120mA
Ambient temperature Ta (°C)
tON
2.5
IOFF – Ta
1000
0
－40
Turn-on time
1.5
MOSFET on-state voltage VON
40
MOSFET on-state resistance
0.5
－0.5
－1.5
60
80
IF = 5ｍA
300
200
100
0
－40
100
Ambient temperature Ta (°C)
－20
0
20
40
60
80
100
Ambient temperature Ta (°C)
5
2002-09-25
TLP206G
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-09-25