CMKD6001 SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three (3) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount package, designed for switching applications requiring extremely low leakage. MARKING CODE: K01 SOT-363 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage SYMBOL VR 75 V Peak Repetitive Reverse Voltage VRRM IF 100 V 250 mA IFRM IFSM 500 mA 4.0 A IFSM PD 1.0 A 250 mW Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg ΘJA UNITS -65 to +150 °C 500 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR BVR VF IF=1.0mA 0.85 VF IF=10mA 0.95 V VF IF=100mA 1.1 V CT VR=0, f=1.0MHz IR=IF=10mA, RL=100Ω Rec. to 1.0mA 2.0 pF 3.0 μs trr 500 UNITS VR=75V IR=100μA 100 pA V V R4 (13-January 2010) CMKD6001 SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: K01 R4 (13-January 2010) w w w. c e n t r a l s e m i . c o m