CMLD6001DO - Central Semiconductor Corp.

CMLD6001DO
SURFACE MOUNT SILICON
DUAL, ISOLATED, OPPOSING
ULTRA LOW LEAKAGE
SWITCHING DIODE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD6001DO
type contains two (2) isolated opposing configuration,
silicon switching diodes, manufactured by the epitaxial
planar process, epoxy molded in an SOT-563 surface
mount package. These devices are designed for
switching applications requiring extremely low leakage.
MARKING CODE: C60
SOT-563 CASE
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
SYMBOL
VR
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
75
UNITS
V
VRRM
IF
100
V
250
mA
IFSM
IFSM
4.0
A
1.0
A
PD
TJ, Tstg
250
mW
-65 to +150
°C
ΘJA
500
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=75V
500
100
UNITS
pA
BVR
IR=100μA
VF
IF=1.0mA
0.85
V
V
VF
IF=10mA
0.95
V
VF
IF=100mA
1.1
V
CJ
VR=0, f=1.0MHz
2.0
pF
trr
IR=IF=10mA, Irr=1.0mA, RL=100Ω
3.0
μs
R5 (15-June 2015)
CMLD6001DO
SURFACE MOUNT SILICON
DUAL, ISOLATED, OPPOSING
ULTRA LOW LEAKAGE
SWITCHING DIODE
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) NC
3) Cathode D2
4) Anode D2
5) NC
6) Cathode D1
MARKING CODE: C60
R5 (15-June 2015)
w w w. c e n t r a l s e m i . c o m