CMLD6001 SURFACE MOUNT DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two (2) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini™ surface mount package. These devices are designed for switching applications requiring extremely low leakage. MARKING CODE: C6D SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage SYMBOL VR 75 Peak Repetitive Reverse Voltage VRRM IF 100 V 250 mA IFSM IFSM 4.0 A 1.0 A 250 mW Continuous Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance PD TJ, Tstg ΘJA UNITS V -65 to +150 °C 500 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX 500 UNITS IR VR=75V BVR IR=100μA VF IF=1.0mA 0.85 V VF IF=10mA 0.95 V VF IF=100mA 1.1 V CT VR=0, f=1.0MHz 2.0 pF trr IR=IF=10mA, RL=100Ω Rec. to 1.0mA 3.0 μs 100 pA V R2 (18-January 2010) CMLD6001 SURFACE MOUNT DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) NC 3) Anode D2 4) Cathode D2 5) NC 6) Cathode D1 MARKING CODE: C6D R2 (18-January 2010) w w w. c e n t r a l s e m i . c o m