BAS16HT1G Small Signal Diode Connection Diagram 1 1 A1 2 SOD-323 2 Absolute Maximum Ratings * Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 85 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second 600 mA TSTG Storage Temperature Range -65 to +150 °C Operating Junction Temperature -55 to +150 °C TJ * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1)These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA Parameter Units Power Dissipation 200 mW Thermal Resistance, Junction to Ambient 600 °C/W Electrical Characteristics Symbol Value TA = 25°C unless otherwise noted Parameter Test Conditions Min. Max. 85 Units VR Breakdown Voltage IR = 5.0μA VF Forward Voltage IF = 0.1mA IF = 10mA IF = 50mA IF = 150mA 715 855 1.0 1.25 mV mV V V IR Reverse Leakage VR = 75V VR = 25V, TA = 150°C VR = 75V, TA = 150°C 1.0 30 50 μA μA μA CT Total Capacitance VR = 0, f = 1.0MHz 2.0 pF trr Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω 6.0 ns © 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev. A1 V www.fairchildsemi.com 1 BAS16HT1G — Small Signal Diode March 2010 300 Ta= 25°C Reverse Current, IR [nA] Ta= 25°C 250 140 200 150 130 100 120 50 0 10 R Reverse Voltage, VR [v] 150 110 1 2 3 5 10 20 30 Reverse Current, IR [uA] 50 Forward Voltage, VF [mV] 400 350 300 250 225 1 2 3 F 5 10 20 30 Forward Current, IF [uA] 50 70 100 725 Ta= 25°C 700 650 600 550 500 450 0.1 100 Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100μA 0.2 0.3 0.5 1 2 3 Forward Current, IF [mA] 5 10 Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10mA Total Capacitance, C T [pF] Ta= 25°C 1.2 1 0.8 1.3 Ta= 25 °C 1.2 1.1 F Forward Voltage, VF [V] 50 Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V 485 Ta= 25°C 450 1.4 30 F F Forward Voltage, VF [mV] Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100μA 1.5 20 Reverse Voltage, VR [v] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature 100 0.6 10 1 20 30 50 100 200 300 Forward Current, IF [mA] 500 Figure 5. Forward Voltage vs Forward Current VF - 10 - 800mA 2 4 6 8 10 Reverse Voltage [V] 12 14 15 Figure 6. Total Capacitance © 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev. A1 0 www.fairchildsemi.com 2 BAS16HT1G — Small Signal Diode Typical Performance Characteristics Reverse Recovery Time, trr [ns] 4 500 IR 400 Ta= 25°C C u rre n t [m A ] 3.5 3 2.5 2 400 300 IF 200 200 100 D 1.5 20 30 40 Reverse Current [mA] 50 OR WA R 300 100 1 10 -F 60 0 0 (A V - A D CU R RE NT ST EA D Y Io - A V E R A ST VERA G E AT GE R R E C E ECTIF T IF -m IE D IE D C A CU URR E NRTR E - mNAT ) mA 0 50 0 50 100 100 150 150 o o A Ambient Temperature, TA [ C] IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms Figure 1. Reverse Recovery Time vs Reverse Current TRR - IR 10mA vs 60mA Figure 2. Average Rectified Current (IF(AV)) vs Ambient Temperature (TA) Power Dissipation, PD [mW] 500 400 DO-35 Pkg 300 SOT-23 Pkg 200 SOD-323 Pkg 100 0 0 50 100 150 200 o Average Temperature, Io [ C] Figure 3. Power Derating Curve © 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev. A1 www.fairchildsemi.com 3 BAS16HT1G — Small Signal Diode Typical Performance Characteristics (Continued) BAS16HT1G — Small Signal Diode Physical Dimension SOD-323 Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev. A1 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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