FREESCALE MC13821FCR2

Freescale Semiconductor
Data Sheet: Technical Data
Document Number: MC13821
Rev. 1.5, 09/2009
MC13821
Package Information
Plastic Package
Case 1345
(QFN–12)
MC13821
Low Noise Amplifier with Bypass
Switch
1
Introduction
The MC13821 is a high gain LNA with extremely low
noise figure, designed for cellular, GPS and ISM band
applications. An integrated bypass switch is included to
preserve input intercept performance. The input and
output match are external to allow maximum design
flexibility. The MC13821 is fabricated using Freescale's
advanced RF BiCMOS process using the SiGe:C option
and is packaged in the QFN-12 leadless package.
1.1
•
•
•
•
•
Ordering Information
Device
Device Marking or
Operating
Temperature Range
Package
MC13821
821
QFN-12
Contents:
1
2
3
4
5
6
7
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Electrical Specifications . . . . . . . . . . . . . . . . 3
Application Information . . . . . . . . . . . . . . . . 10
Printed Circuit Board . . . . . . . . . . . . . . . . . . 28
Scattering Parameters . . . . . . . . . . . . . . . . . 32
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Reference Documentation . . . . . . . . . . . . . . 42
Revision History . . . . . . . . . . . . . . . . . . . . . . 42
Features
RF Input Frequency: 1000 MHz to 2.4 GHz
Gain: 16.4 dB (typ) at 1960 MHz and 15.7 dB
(typ) at 2140 MHz
Output 3rd Order Intercept Point (OIP3): 17.4
dBm (typ) at 1960 MHz and 19.7 dBm (typ) at
2140 MHz
Noise Figure (NF): 1.25 dB (typ) at 1960 MHz
and 1.3 dB (typ) at 2140 MHz
1dB Compression Point (P1dB): -6 dBm (typ) at
1960 MHz and -5 dBm (typ) at 2140 MHz
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2005–2009. All rights reserved.
Introduction
•
•
•
•
•
•
Freescale’s IP3 Boost Circuitry
Bypass Mode Included for Improved Intercept Point Performance
Total Supply Current:
2.8 mA @ 2.7 Vdc
10 µA (typ) in Bypass Mode
Bias Stabilized for Device and Temperature Variations
QFN-12 Leadless Package with Low Parasitics
SiGe Technology Ensures Lowest Possible Noise Figure
NC
1
VCC1
2
NC
NC
NC
12
11
10
MC13821
9
Gnd
8
Gain
7
Enable
Logic
LNA
Out
3
4
5
6
Rbias
Emit
Gnd
LNA
In
Figure 1. Simplified Block Diagram
MC13821 Data Sheet: Technical Data, Rev. 1.5
2
Freescale Semiconductor
Electrical Specifications
2
Electrical Specifications
Table 1. Maximum Ratings
Ratings
Symbol
Minimum
Typical
Maximum
Unit
Supply Voltage
VCC
2.7
2.75
3.3
V
Storage Temperature Range
Tstg
-65
25
150
°C
Operating Ambient Temperature Range
TA
-30
25
85
°C
RF Input Power
Prf
—
-30
10
dBm
Power Dissipation
Pdis
—
—
100
mW
Thermal Resistance, Junction to Case
RθJC
24
24
24
C/W
Thermal Resistance, Junction to Ambient, 4 Layer Board
RθJA
90
90
90
C/W
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤200 V, Charge Device Model (CDM) ≤450 V, and
Machine Model (MM) ≤50 V. Additional ESD data available upon request.
Table 2. Recommended Operating Conditions
Characteristic
Symbol
Minimum
Typical
Maximum
Unit
RF Frequency range
fRF
1000
—
2400
MHz
Supply Voltage
VCC
2.7
2.75
3
V
—
—
1.25
0
1.8
0
VCC
0.8
Minimum
Typical
Maximum
15.0
14.5
13.3
13
16.0
15.6
14.3
14.2
17.0
16.5
15.3
15.2
20.0
19.5
19.5
19.5
21.0
20.5
20.5
19.8
22.0
21.5
21.5
21.0
0.9
0.9
0.9
0.9
1.01
0.96
1.01
0.96
1.1
1.05
1.1
1.05
V
Logic Voltage
Input High Voltage
Input Low Voltage
Table 3. Electrical Characteristics
(VCC = 2.75 V, TA = 25°C, unless otherwise noted.)
Characteristic
Symbol
|S21|2
Insertion Gain
R1=1.2 kΩ, Freq=1.960 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.960 GHz
R1=2 kΩ, Freq=2.14 GHz
Maximum Stable Gain and/or Maximum Available Gain1
R1=1.2 kΩ, Freq=1.960 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.960 GHz
R1=2 kΩ, Freq=2.14 GHz
Minimum Noise Figure
R1=1.2 kΩ, Freq=1.960 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.960 GHz
R1=2 kΩ, Freq=2.14 GHz
Unit
dB
MSG, MAG
dB
NFmin
dB
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
3
Electrical Specifications
Table 3. Electrical Characteristics (continued)
(VCC = 2.75 V, TA = 25°C, unless otherwise noted.)
Characteristic
Symbol
Associated Gain at Minimum Noise Figure
R1=1.2 kΩ, Freq=1.960 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.960 GHz
R1=2 kΩ, Freq=2.14 GHz
1
Minimum
Typical
Maximum
19.8
19
19.6
19
20.8
19.8
20.5
19.8
21.8
20.8
21.5
20.8
Gnf
Unit
dB
Maximum Available Gain and Maximum Stable Gain
are defined by the K factor as follows:
S
2
21
MAG = ---------- ⎛ K ± K – 1⎞
⎠
S ⎝
12
, if K > 1,
S
21
MSG = ---------S
12
, if K < 1
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(VCC = 2.75 V, TA = 25°C, Rbias = 2 kΩ, unless otherwise noted.)
Characteristic
Symbol
Minimum
Typical
Maximum
Unit
Frequency
f
—
1575
—
MHz
Active Gain
G
16
17.7
18.7
dB
Active Noise Figure
NF
1.0
1.25
1.45
dB
Active Input Third Order Intercept Point
IIP3
-1.0
0.5
1.5
dBm
Active Input 1dB Compression Point
P1dB
-11
-10
-9
dBm
ICC
2.3
2.8
3.3
mA
Bypass Gain
G
-6.0
-4.1
-3.1
dB
Bypass Noise Figure
NF
3.9
4.8
6
dB
Bypass Input Third Order Intercept Point
IIP3
24
26
27
dBm
2
4
20
µA
1575 MHz (Refer to Figure 9)
Active Current @ 2.75 V
Bypass Current
1960 MHz (Refer to Figure 10)
Frequency
f
—
1960
—
MHz
Active Gain
G
15
16.4
17.4
dB
Active Noise Figure
NF
1.0
1.25
1.45
dB
Active Input Third Order Intercept Point
IIP3
-0.5
1
2
dBm
Active Input 1dB Compression Point
P1dB
-7
-6
-5
dBm
ICC
2.3
2.8
3.3
mA
Bypass Gain
G
-6
-3.9
-3
dB
Bypass Noise Figure
NF
3.9
4.7
6
dB
Bypass Input Third Order Intercept Point
IIP3
23
25
26
dBm
2
4
20
µA
Active Current @ 2.75 V
Bypass Current
MC13821 Data Sheet: Technical Data, Rev. 1.5
4
Freescale Semiconductor
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(VCC = 2.75 V, TA = 25°C, Rbias = 2 kΩ, unless otherwise noted.)
Characteristic
Symbol
Minimum
Typical
Maximum
Unit
1960 MHz (R1 = 1.3 kΩ, R2 = 68 Ω, C1 = 15 pF, C2 = 1.2 pF, L1 = 5.6 nH) (Refer to Figure 10)
Frequency
f
—
1960
—
MHz
Active Gain
G
10.5
11.5
13
dB
Active Noise Figure
NF
1.1
1.3
1.9
dB
Active Input Third Order Intercept Point
IIP3
-2
0
1
dBm
Active Input 1dB Compression Point
P1dB
-15
-10
—
dBm
ICC
3.6
4.5
5.5
mA
Bypass Gain
G
-6.5
-3.5
-3
dB
Bypass Noise Figure
NF
3.8
4.7
6
dB
Bypass Input Third Order Intercept Point
IIP3
20
21
22
dBm
2
4
20
µA
Active Current @ 2.75 V
Bypass Current
1960 MHz (R1 = 1.8 kΩ, R2 = 330 Ω, C1 = 8 pF, C2 = 1.2 pF, L1 = 4.7 nH) (Refer to Figure 10)
Frequency
f
—
1960
—
MHz
Active Gain
G
13.8
14.8
16
dB
Active Noise Figure
NF
1.1
1.3
1.9
dB
Active Input Third Order Intercept Point
IIP3
-2
0
1
dBm
Active Input 1dB Compression Point
P1dB
-10
-5
-4
dBm
ICC
2.3
2.8
5.5
mA
Bypass Gain
G
-6.5
-3.5
-3
dB
Bypass Noise Figure
NF
3.8
4.7
6
dB
Bypass Input Third Order Intercept Point
IIP3
16
18
18.5
dBm
2
4
20
µA
Active Current @ 2.75 V
Bypass Current
2140 MHz (Refer to Figure 11)
Frequency
f
—
2140
—
MHz
Active Gain
G
14.7
15.7
17.5
dB
Active Noise Figure
NF
1.1
1.3
1.5
dB
Active Input Third Order Intercept Point
IIP3
2.5
3.5
4.5
dBm
Active Input 1dB Compression Point
P1dB
-6.0
-5
-4
dBm
ICC
2.3
2.8
3.8
mA
Bypass Gain
G
-4.2
-3.2
-2.2
dB
Bypass Noise Figure
NF
3.0
4.2
6
dB
Bypass Input Third Order Intercept Point
IIP3
22.5
24.5
25.5
dBm
2
4
20
µA
Active Current @ 2.75 V
Bypass Current
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
5
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(VCC = 2.75 V, TA = 25°C, Rbias = 2 kΩ, unless otherwise noted.)
Characteristic
Symbol
Minimum
Typical
Maximum
Unit
2140 MHz (R1 = 1.5 kΩ, R2 = 10 kΩ, C2 = 1 pF) (Refer to Figure 11)
Frequency
f
—
2140
—
MHz
Active Gain
G
14.5
15.7
17.5
dB
Active Noise Figure
NF
1.1
1.3
1.8
dB
Active Input Third Order Intercept Point
IIP3
2
5
5.5
dBm
Active Input 1dB Compression Point
P1dB
-5
-4
-3
dBm
ICC
3.4
4.45
5.5
mA
Bypass Gain
G
-5
-4
-3
dB
Bypass Noise Figure
NF
3.2
4.2
6
dB
Bypass Input Third Order Intercept Point
IIP3
18
20
21
dBm
2
4
20
µA
Active Current @ 2.75 V
Bypass Current
2140 MHz (R1 = 1.2 kΩ, R2 = 3.3 kΩ,, R3 = 10 Ω, C1 = 8 pF, C2 = 1 pF) (Refer to Figure 12)
Frequency
f
—
2140
—
MHz
Active Gain
G
13.7
14.5
15.5
dB
Active Noise Figure
NF
1.3
1.49
1.65
dB
Active Input Third Order Intercept Point
IIP3
3.5
5.0
6.0
dBm
Active Input 1dB Compression Point
P1dB
-8
-7
-6
dBm
ICC
3.9
4.45
5.5
mA
Bypass Gain
G
-4.9
-4.4
-3.9
dB
Bypass Noise Figure
NF
3
4.3
6
dB
Bypass Input Third Order Intercept Point
IIP3
18
20
21
dBm
2
4
20
µA
Active Current @ 2.75 V
Bypass Current
2400 MHz (Refer to Figure 13)
Frequency
f
—
2400
—
MHz
Active Gain
G
13
14
16
dB
Active Noise Figure
NF
1.3
1.49
1.65
dB
Active Input Third Order Intercept Point
IIP3
3.0
4.0
5.0
dBm
Active Input 1dB Compression Point
P1dB
-5.0
-3.8
-3
dBm
ICC
2.3
2.8
3.2
mA
Bypass Gain
G
-4.5
-3.6
-2.9
dB
Bypass Noise Figure
NF
3.2
4.2
6
dB
Bypass Input Third Order Intercept Point
IIP3
22
24
25
dBm
2
4
20
µA
Active Current @ 2.75 V
Bypass Current
MC13821 Data Sheet: Technical Data, Rev. 1.5
6
Freescale Semiconductor
Electrical Specifications
Table 5. Truth Table
Enable
Pin Function
Disable
Pin Name
Low Gain
High Gain
Low Gain
High Gain
Circuit Bias VCC1
VCC1
1
1
1
1
Toggles Gain Mode (Active or
Bypass)
GAIN
0
1
0
1
Toggles LNA On/Off
ENABLE
1
1
0
0
LNA Bias VCC3
LNA Out
1
1
1
1
NOTES: 1.
2.
3.
4.
Logic state "1" equals VCC voltage. Logic state of "0" equals ground potential.
VCC3 is inductively coupled to LNA OUT pin
Minimum logic state “1” for enable and gain pins is 1.25 V.
Minimum logic state “0” for enable and gain pins is 0.8 V.
Maximum Stable/Available Gain and
Forward Insertion Gain vs. Frequency
Rbias is 2 kohm
MSG, Maximum Stable Gain; MAG,
Maximum Available Gain; |S21|2,
Forward Insertion Gain, (dB)
30
25
MSG
20
15
|S21|2
MAG
10
5
0
0.5
1.5
2.5
3.5
4.5
5.5
f, Frequency (GHz)
Figure 2. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency
(Rbias = 2 kΩ)
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
7
Electrical Specifications
MSG, Maximum Stable Gain; MAG,
Maximum Available Gain; |S21|2,
Forward Insertion Gain (dB)
Maxim um Stable/Available Gain and
Forw ard Insertion Gain vs. Frequency
Rbias is 1.2 kohm
35
30
MSG
M
25
20
MAG
15
|S21|2
10
5
0
0.5
1.5
2.5
3.5
4.5
f, Frequency (GHz)
Figure 3. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency
(Rbias = 1.2 kΩ)
Maximum Stable/Available Gain and
Forward Insertion Gain vs. Icc
MSG, Maximum Stable Gain; MAG, Maximum
Available Gain; |S21|2, Forward Insertion Gain (dB)
24
23
MSG/MAG 1.575 GHz
22
MSG/MAG 1.96 GHz
21
20
MSG/MAG 2.14 GHz
19
18
17
S|21|2 1.575 GHz
S|21|2 1.96 GHz
16
15
S|21|2 2.14 GHz
14
2.5
3
3.5
4
4.5
5
5.5
Icc (m A)
Figure 4. Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc
MC13821 Data Sheet: Technical Data, Rev. 1.5
8
Freescale Semiconductor
Electrical Specifications
Minim um Noise Figure and Associated Gain vs. Frequency Rbias = 2 kohm
30
1.15
25
Gnf
1.1
20
1.05
15
1
NFm in
10
0.95
5
0.9
0.85
1000
1200
1400
1600
1800
2000
2200
Gnf, Associated Gain (dB)
NFmin, Minimum Noise Figure
(dB)
1.2
0
2400
f, Frequency (MHz)
Figure 5. Minimum Noise Figure and Associated Gain vs. Frequency
(Rbias = 2 kΩ)
Minim um Noise Figure and Associated Gain vs. Frequency
Rbias = 1.2 kohm
30
1.1
25
Gnf
1.08
20
1.06
15
1.04
10
1.02
NFm in
5
1
0.98
1000
1200
1400
1600
1800
2000
2200
Gnf, Associated Gain (dB)
NFmin, Minimum Noise
Figure (dB)
1.12
0
2400
f, Frequency (MHz)
Figure 6. Minimum Noise Figure and Associated Gain vs. Frequency
(Rbias = 1.2 kΩ)
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
9
Application Information
Input 3rd Order Intercept
Point (dBm)
Input 3rd Order Intercept Point vs. Icc
1960 MHz Application Ckt.
6
4
2
0
-2
-4
-6
1.5
2.5
3.5
4.5
5.5
Icc (mA)
Figure 7. Input 3rd Order Intercept Point vs. Icc for the 1960 MHz Application Circuit
(Rbias varied from 1.2 kΩ to 3 kΩ)
Input 3rd Order Intercept
Point, IIP3 (dBm)
Input 3rd Order Intercept Point vs. Icc
2140 MHz Application Circuit
6
5
4
3
2
1
0
-1
-2
1
2
3
4
5
Icc (mA)
Figure 8. Input 3rd Order Intercept Point vs. Icc for the 2140 MHz Application Circuit
(Rbias varied from 1.2 kΩ to 3 kΩ)
3
Application Information
The MC13821 SiGe:C LNA is designed for applications in the 1000 MHz to 2.4 GHz range. It has three
different modes: High Gain, Low Gain (Bypass) and Disabled. The IC is programmable through the Gain
and Enable pins. The logic truth table is given in Table 5.
In these application examples a balance is made between the competing RF performance characteristics of
ICC, NF, gain, IP3 and return losses with unconditional stability. Conjugate matching is not used for the
input or output. Instead, matching which achieves a trade-off in RF performance qualities is utilized. For
a particular application or spec requirement, the matching can be changed to achieve enhanced
performance of one parameter at the expense of other parameters.
MC13821 Data Sheet: Technical Data, Rev. 1.5
10
Freescale Semiconductor
Application Information
Application information for 1575, 1960, 2140 and 2400 MHz are shown. For each application, two current
drain examples are provided. Typical RF performance is shown for two values of bias resistor R1: 1.2 kΩ
and 2 kΩ, see Table 6, Table 7, Table 8, and Table 9. These two current drain states offer variation in
intercept point, gain, and noise figure. For 1960 and 2140 MHz, additional application circuits are shown.
These demonstrate specific performance characteristics and utilize varying input and output matches and
different biasing resistors.
Measurements are made at a bias of VCC = 2.75 V. Freq. spacing for IP3 measurements is 200 kHz.
Non-linear measurements are made at Pin = -30 dB. The board loss corrections for these boards are: Input
0.16 dB, Output 0.2 dB. Gain and NF results incorporate these corrections in order to better reflect the
actual performance of the device.
3.1
1575 MHz Application
This application circuit was designed to provide NF < 1.2 dB, S21 gain > 18 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 1575 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 6.
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
N
C
C5
.01uf
NC
NC
12
11
10
MC13821
1575 MHz
LNA
1
C6
33 pf
2
Vcc1
LNA
OUT
NC
9
Gnd
8
Gain
7
Enable
Logic
C2
1
pf
3
L2
5.6 nH
R2
680
C3
33 pf
4
C4
.01uf
R1
2k
Vcc3
Rbias
5
6
L1
5.6 nH
LNA IN
C1
22pF
Figure 9. 1575 MHz LNA Application Schematic
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
11
Application Information
Table 6. Typical 1575 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
Minimum
Typical
Maximum
Unit
Frequency
f
—
1575.42
—
MHz
Power Gain
High Gain
Bypass
G
17
-6
18
-4.7
19
-4
16
18
20
20.8
22
22.5
-1
24
2.0
25.5
3.0
26.5
8
—
10
—
12
—
-9
—
-8.0
—
-7.0
—
1.0
3.9
1.25
4.8
1.45
6
3.9
2.0
4.45
4.0
5.5
20
mA
µA
Rbias R1 Value
—
1.2
—
kΩ
Rstability R2 Value
—
620
—
Ω
—
—
-15.5
-8.1
-10
-5
16
-6
18.0
-4.1
19
-3.1
-22
-3
-23.7
-4.4
—
—
—
—
-13.9
-6.8
-11
-5
—
1575.42
—
R1 = 1.2 kΩ, R2 = 620 Ω
Output Third Order Intercept Point
High Gain
Bypass
OIP3
Input Third Order Intercept Point
High Gain
Bypass
IIP3
Out Ref P1dB
High Gain
Bypass
P1dBout
In Ref P1dB
High Gain
Bypass
P1dBin
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Input Return Loss
High Gain
Bypass
S11
Gain
High Gain
Bypass
S21
Reverse Isolation
High Gain
Bypass
S12
Output Return Loss
High Gain
Bypass
S22
dB
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
R1= 2.0 kΩ, R2 = 680 Ω
Frequency
f
MHz
MC13821 Data Sheet: Technical Data, Rev. 1.5
12
Freescale Semiconductor
Application Information
Table 6. Typical 1575 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Minimum
Typical
Maximum
16
-6
17.7
-5.0
18.7
-4
16
18
18.5
21.7
20.5
—
-1
24
0.5
26
1.5
27
6
—
8
—
9.7
—
-11
—
-10
—
-9
—
1.0
3.9
1.25
4.8
1.45
6
2.3
2.0
2.8
4.0
3.3
20
mA
µA
Rbias R1 Value
—
2.0
—
kΩ
Rstability R2 Value
—
680
—
Ω
—
—
-13.5
-9.0
-10
-7
16
-6
17.7
-4.1
18.7
-3.1
-22
-3
-22.9
-4.3
—
—
—
—
-10.8
-7.2
-9
-5
Power Gain
High Gain
Bypass
Symbol
G
Output Third Order Intercept Point
High Gain
Bypass
OIP3
Input Third Order Intercept Point
High Gain
Bypass
IIP3
Out Ref P1dB
High Gain
Bypass
P1dBout
In Ref P1dB
High Gain
Bypass
P1dBin
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Input Return Loss
High Gain
Bypass
S11
Gain
High Gain
Bypass
S21
Reverse Isolation
High Gain
Bypass
S12
Output Return Loss
High Gain
Bypass
S22
Unit
dB
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
13
Application Information
3.2
1960 MHz Application
These application circuits are designed to demonstrate performance at 1960 MHz. By varying the value of
resistor R1, the current draw and the IP3 performance of the device can be tailored for a particular
application. Shown here are four variations of the circuit for different IP3 and ICC requirements. The input
and output matches are also changed on some circuits to demonstrate different NF and gain performance.
Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 7. Two
variations of the circuit utilize different matches. For all circuits the match consists of a highpass match on
the output and a simple inductor-capacitor network on the LNA input.
NC
C5
.01uf
NC
NC
12
11
10
MC13821
1960 MHz
LNA
1
C6
33 pf
2
Vcc1
9
Gnd
8
Gain
7
Enable
Logic
C2
0.9pf
LNA
OUT
NC
3
R2
3.3 k
L2
2.7 nH
C3
33 pf
4
C4
.01uf
5
R1
2k
Vcc3
6
L1
4.3 nH
Rbias
LNA IN
C1
33pF
Figure 10. 1960 MHz LNA Application Schematic
Table 7. Typical 1960 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
Minimum
Typical
Maximum
Unit
Frequency
f
—
1960
—
MHz
Power Gain
High Gain
Bypass
G
15
-6
16
-4.5
17
-3.5
19
18
22
20.5
23
21.5
R1 = 1.2 kΩ, R2 = 3.3 kΩ
Output Third Order Intercept Point
High Gain
Bypass
dB
OIP3
dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5
14
Freescale Semiconductor
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Minimum
Typical
Maximum
4
24
5.5
25
6.0
26
8
—
10.5
—
12.0
—
-7
—
-6.0
—
-5.0
—
1.0
3.9
1.26
4.5
1.45
6
3.9
2
4.45
4
5.5
20
mA
µA
Rbias R1 Value
—
1.2
—
kΩ
Rstability R2 Value
—
3.3
—
kΩ
—
—
-9.7
-8.7
-7
-6
15
-6
16.4
-3.8
17.4
-3.0
-20
-3
-21.7
-4.2
—
—
—
—
-14.6
-6.3
-10
-5
—
1960
—
15
-5
16.4
-4.0
17.4
-3.0
15.5
19
17.4
21
19.4
23
-0.5
23
1.0
25
2.0
26
Input Third Order Intercept Point
High Gain
Bypass
Symbol
IIP3
Out Ref P1dB
High Gain
Bypass
P1dBout
In Ref P1dB
High Gain
Bypass
P1dBin
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Input Return Loss
High Gain
Bypass
S11
Gain
High Gain
Bypass
S21
Reverse Isolation
High Gain
Bypass
S12
Output Return Loss
High Gain
Bypass
S22
Unit
dBm
dBm
dBm
dB
dB
dB
dB
dB
R1 = 2.0 kΩ, R2 = 3.3 kΩ
Frequency
f
Power Gain
High Gain
Bypass
G
Output Third Order Intercept Point
High Gain
Bypass
OIP3
Input Third Order Intercept Point
High Gain
Bypass
IIP3
MHz
dB
dBm
dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
15
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
Minimum
Typical
Maximum
8.5
—
10.4
—
12.4
—
-7
—
-6.0
—
-5
—
1.0
3.9
1.25
4.7
1.45
6
2.3
2
2.8
4.0
3.3
20
mA
µA
Rbias R1 Value
—
2.0
—
kΩ
Rstability R2 Value
—
3.3
—
kΩ
—
—
-9.2
-9.8
-7
-7
15
-6
16.4
-3.9
17.4
-3.0
-20
-3
-21.1
-4.0
—
—
—
—
-25
-7.8
-10
-6
—
1960
—
10.5
-6.5
11.5
-3.5
12.5
-3
8.5
13.5
11.5
17.5
13.5
19
-2
20
0
21
1
22
1
—
5.5
—
—
—
Out Ref P1dB
High Gain
Bypass
P1dBout
In Ref P1dB
High Gain
Bypass
P1dBin
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Input Return Loss
High Gain
Bypass
S11
Gain
High Gain
Bypass
S21
Reverse Isolation
High Gain
Bypass
S12
Output Return Loss
High Gain
Bypass
S22
Unit
dBm
dBm
dB
dB
dB
dB
dB
R1 = 1.3 kΩ, R2 = 68 Ω, C1 = 15 pF, C2 = 1.2 pF, L1 = 5.6 nH
Frequency
f
Power Gain
High Gain
Bypass
G
Output Third Order Intercept Point
High Gain
Bypass
OIP3
Input Third Order Intercept Point
High Gain
Bypass
IIP3
Out Ref P1dB
High Gain
Bypass
MHz
dB
dBm
dBm
dBm
P1dBout
MC13821 Data Sheet: Technical Data, Rev. 1.5
16
Freescale Semiconductor
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
In Ref P1dB
High Gain
Bypass
P1dBin
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Minimum
Typical
Maximum
-15
—
-10
—
—
1.0
3.8
1.3
4.7
1.9
6
3.6
2
4.5
4
5.5
20
Unit
dBm
dB
mA
µA
Rbias R1 Value
1.3
kΩ
Rstability R2 Value
68
Ω
Input Return Loss
High Gain
Bypass
S11
Gain
High Gain
Bypass
S21
Reverse Isolation
High Gain
Bypass
S12
Gain
High Gain
Bypass
S22
dB
—
—
-10
-10
-7
-7
10.5
-6.5
11.5
-3.5
13
-3
-19
-4
-20
-7
—
—
—
—
-9.5
-7.6
-7
-6
—
1960
—
14
-6.5
15
-3.5
16
-3
12
9.5
15
14.5
17
15.5
-2
16
0
18
1
18.5
1
—
10
—
12
—
-10
—
-5
—
-4
—
dB
dB
dB
R1 = 1.8 kΩ, R2 = 330 Ω, C1 = 8 pF, C2 = 1.2 pF, L1 = 4.7 nH
Frequency
f
Power Gain
High Gain
Bypass
G
Output Third Order Intercept Point
High Gain
Bypass
OIP3
Input Third Order Intercept Point
High Gain
Bypass
IIP3
Out Ref P1dB
High Gain
Bypass
P1dBout
In Ref P1dB
High Gain
Bypass
P1dBin
MHz
dB
dBm
dBm
dBm
dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
17
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
Minimum
Typical
Maximum
1.1
3.8
1.3
4.7
1.9
6
2.3
2
2.8
4
5.5
20
mA
µA
Rbias R1 Value
—
1.8
—
kΩ
Rstability R2 Value
—
330
—
Ω
—
—
-9.2
-9.8
-7
-7
13.8
—
14.8
-3.9
16
—
-19
-3
-21
-4
—
—
—
—
-17
-7.8
-12
-6
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Unit
dB
Input Return Loss
High Gain
Bypass
S11
dB
Gain
High Gain
Bypass
S21
Reverse Isolation
High Gain
Bypass
S12
Gain
High Gain
Bypass
S22
Single Tone IIP3 (Fin = 653.3 MHz, Fout = 1960 MHZ)
IIP3
-13
-9
-8
dBm
Single Tone IIP2 (Fin = 980 MHz, Fout = 1960 MHZ)
IIP2
-11
-6
-5
dBm
Two Tone IIP2 (F1 = 1880 MHz, F2 = 3840 MHZ,
Fout = 1960 MHZ)
IIP2
1
7
7.5
dBm
Two Tone IIP3 (F1 = 1880 MHz, F2 = 5720 MHZ,
Fout = 1960 MHZ)
IIP3
-1.5
3.5
4.0
dBm
dB
dB
dB
MC13821 Data Sheet: Technical Data, Rev. 1.5
18
Freescale Semiconductor
Application Information
3.3
2140 MHz Application
These application circuits demonstrate performance at 2140 MHz. Resistor values for R1 and R2 are varied
to adjust ICC, which also adjusts IP3 performance. Matching component values can be changed to enhance
a particular parameter, but usually at the expense of another. Typical performance that can be expected
from this circuit at 2.75 V VCC is listed in Table 8. Three variations of the circuit are realized for different
requirements for IP3 and ICC. The same matching networks are used on the 2140 MHz circuit as on the
1960 MHz application circuit, with a highpass match on the output and a simple inductor-capacitor
network on the LNA input.
NC
C5
.01uf
C6
33 pf
NC
NC
12
11
10
MC13821
2140 MHz
LNA
1
2
Vcc1
LNA
OUT
NC
9
Gnd
8
Gain
7
Enable
Logic
C2
0.9pf
3
R2
3.3 k
L2
2.7 nH
C3
33 pf
4
C4
.01uf
5
R1
2k
Vcc3
6
L1
4.3 nH
Rbias
LNA IN
C1
33pF
Figure 11. 2140 MHz LNA Application Schematic
Table 8. Typical 2140 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency
f
—
2140
—
MHz
Power Gain
High Gain
Bypass
G
14.7
-4.4
15.7
-3.4
16.7
-2.5
18.2
13
20.7
16.4
22.7
18.5
R1 = 1.2 kΩ, R2 = 3.3 kΩ (Refer to Figure 11)
Output Third Order Intercept Point
High Gain
Bypass
dB
OIP3
dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
19
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Min
Typ
Max
3.5
18
5.0
20
6.0
21
8.7
—
10.7
—
12.7
—
-6
—
-5.0
—
-4
—
1.3
3
1.49
3.4
1.65
6
3.9
2
4.45
4
5.5
20
mA
µA
Rbias R1 Value
—
1.2
—
kΩ
Rstability R2 Value
—
3.3
—
kΩ
—
—
-8.5
-8.9
-7
-7
14.7
-6
15.8
-4.1
16.7
-3
-20
-3.5
-22.2
-4.5
—
—
—
—
-12.5
-6.1
-10
-5
—
2140
—
13.7
-4.9
14.5
-4.4
15.5
-3.9
17.2
15.1
19.5
17.6
21.5
20.1
3.5
20
5.0
22
6.0
24
Input Third Order Intercept Point
High Gain
Bypass
Symbol
IIP3
Out Ref P1dB
High Gain
Bypass
P1dBout
In Ref P1dB
High Gain
Bypass
P1dBin
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Input Return Loss
High Gain
Bypass
S11
Gain
High Gain
Bypass
S21
Reverse Isolation
High Gain
Bypass
S12
Output Return Loss
High Gain
Bypass
S22
Unit
dBm
dBm
dBm
dB
dB
dB
dB
dB
R1 = 1.2 kΩ, R2 = 3.3 kΩ, R3 = 10 Ω, C1 = 8pF, C2 = 1 pF (Refer to Figure 12)
Frequency
f
Power Gain
High Gain
Bypass
G
Output Third Order Intercept Point
High Gain
Bypass
OIP3
Input Third Order Intercept Point
High Gain
Bypass
IIP3
MHz
dB
dBm
dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5
20
Freescale Semiconductor
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
5.7
—
7.5
—
9.5
—
-8
—
-7
—
-6
—
1.3
3
1.49
4.3
1.65
6
3.9
2
4.45
4
5.5
20
mA
µA
Rbias R1 Value
—
1.2
—
kΩ
Rstability R2 Value
—
3.3
—
kΩ
Rstability R2 Value
—
10
—
Ω
—
—
-11
-12
-10
-10
13.7
-4.9
14.5
-4.4
15.5
-3.9
-20
-3.5
-22
-4.4
—
—
—
—
-14
-14
-10
-10
—
2140
—
14.7
-4.2
15.7
-3.2
17.5
-2.2
17.8
18.3
19.2
21.3
21
23.3
2.5
22.5
3.5
24.5
4.5
25.5
8.7
—
10.7
—
12.5
—
Out Ref P1dB
High Gain
Bypass
P1dBout
In Ref P1dB
High Gain
Bypass
P1dBin
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Input Return Loss
High Gain
Bypass
S11
Gain
High Gain
Bypass
S21
Reverse Isolation
High Gain
Bypass
S12
Output Return Loss
High Gain
Bypass
S22
Unit
dBm
dBm
dB
dB
dB
dB
dB
R1 = 2.0 kΩ, R2 = 3.3 kΩ (Refer to Figure 11)
Frequency
f
Power Gain
High Gain
Bypass
G
Output Third Order Intercept Point
High Gain
Bypass
OIP3
Input Third Order Intercept Point
High Gain
Bypass
IIP3
Out Ref P1dB
High Gain
Bypass
MHz
dB
dBm
dBm
dBm
P1dBout
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
21
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
-6
—
-5.0
—
-4
—
1.1
3.2
1.3
4.2
1.5
6
2.3
2
2.8
4
3.8
20
mA
µA
Rbias R1 Value
—
2.0
—
kΩ
Rstability R2 Value
—
3.3
—
kΩ
—
—
-13.7
-17.1
-10
-10
14.7
-4
15.7
-3.0
17.5
—
-19
-2.5
-20.9
-3.3
—
—
—
—
-12.1
-14.6
-10
-10
In Ref P1dB
High Gain
Bypass
P1dBin
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Input Return Loss
High Gain
Bypass
S11
Gain
High Gain
Bypass
S21
Reverse Isolation
High Gain
Bypass
S12
Output Return Loss
High Gain
Bypass
S22
Unit
dBm
dB
dB
dB
dB
dB
R1 = 1.5 kΩ, R2 = 10 kΩ, C2 = 1 pF
Frequency
f
Power Gain
High Gain
Bypass
G
Output Third Order Intercept Point
High Gain
Bypass
OIP3
Input Third Order Intercept Point
High Gain
Bypass
IIP3
Out Ref P1dB
High Gain
Bypass
P1dBout
In Ref P1dB
High Gain
Bypass
P1dBin
2140
MHz
dB
14.5
-5
15.7
-4
17.5
-3
16.5
13
20.7
16
23
18
2
18
5
20
5.5
21
9.5
—
12
—
14.5
—
-5
—
-4
—
-3
—
dBm
dBm
dBm
dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5
22
Freescale Semiconductor
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
1.1
4
1.3
5
1.8
6
3.4
2
4.45
4
5.5
20
mA
µA
Rbias R1 Value
—
1.5
—
kΩ
Rstability R2 Value
—
10
—
kΩ
—
—
-8.5
-8.9
-7
-7
14.5
-5
15.7
-4
17.5
—
-19
-3
-20
-4
—
—
-10.5
-8
-12.5
-6.1
—
—
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Unit
dB
Input Return Loss
High Gain
Bypass
S11
dB
Gain
High Gain
Bypass
S21
Gain
High Gain
Bypass
S12
Gain
High Gain
Bypass
S22
Single Tone IIP3 (Fin = 713.3 MHz, Fout = 2140 MHZ)
IIP3
-14
-9.5
—
dBm
Single Tone IIP2 (Fin = 1070 MHz, Fout = 2140 MHZ)
IIP2
-10.5
-5.5
—
dBm
Two Tone IIP2 (F1 = 1950 MHz, F2 = 4090 MHZ,
Fout = 2140 MHZ)
IIP2
-4.5
1.5
—
dBm
Two Tone IIP3 (F1 = 1950 MHz, F2 = 6040 MHZ,
Fout = 2140 MHZ)
IIP3
-2
5
—
dBm
dB
dB
dB
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
23
Application Information
NC
NC
NC
12
11
10
2140 MHz
NC
C5
.01uf
C6
33 pf
Vcc1
LNA
OUT
C2 R3
1 pf 10
L2
2.7 nH
MC13821
2140 MHz LNA
1
9
Gnd
2
8
Gain
3
7
Enable
R2
3.3k
C3
33 pf
4
C4
.01uf
R1
1.2 k
Vcc3
Rbias
5
6
L1
4.3 nH
LNA IN
C1
8 pF
Figure 12. 2140 MHz LNA Application Schematic with R3 Output Resistor Added
MC13821 Data Sheet: Technical Data, Rev. 1.5
24
Freescale Semiconductor
Application Information
3.4
2400 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 9.
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
N
C
C5
.01uf
NC
NC
12
11
10
MC13821
2400 MHz
LNA
1
C6
33 pf
2
Vcc1
9
Gnd
8
Gain
7
Enable
Logic
C2
0.6pf
LNA
OUT
NC
3
R2
3.3 k
L2
2.4 nH
C3
33 pf
4
C4
.01uf
5
R1
2k
Vcc3
6
L1
2.7 nH
Rbias
LNA IN
C1
33pF
Figure 13. 2400 MHz LNA Application Schematic
Table 9. Typical 2400 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
Minimum
Typical
Maximum
Unit
Frequency
f
—
2400
—
MHz
Power Gain
High Gain
Bypass
G
13
-5
14
-3.8
15
-3
18.5
15
21
19
22.5
20
5.5
20
7.0
22
7.5
23
R1 = 1.2 kΩ, R2 = 3.3 kΩ
Output Third Order Intercept Point
High Gain
Bypass
OIP3
Input Third Order Intercept Point
High Gain
Bypass
IIP3
dB
dBm
dBm
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
25
Application Information
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
Minimum
Typical
Maximum
8
—
10.7
—
12
—
-5
—
-4
—
-3
—
1.35
—
1.55
3.8
1.7
6
3.4
2
4.45
4
5.5
20
mA
µA
Rbias R1 Value
—
1.2
—
kΩ
Rstability R2 Value
—
3.3
—
kΩ
—
—
-8.5
-8.9
-7
-7
13
-5
14
-4.1
15
-3
-19
-3
-20.2
-4.0
—
—
—
—
-11
-7.0
-9
-6
—
2400
—
13
-5
14
-4
15
-3
17
17
18.5
20
20
22
3.0
22
4.0
24
5.0
25
8.5
—
10
—
12
—
Out Ref P1dB
High Gain
Bypass
P1dBout
In Ref P1dB
High Gain
Bypass
P1dBin
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Input Return Loss
High Gain
Bypass
S11
Gain
High Gain
Bypass
S21
Reverse Isolation
High Gain
Bypass
S12
Output Return Loss
High Gain
Bypass
S22
Unit
dBm
dBm
dB
dB
dB
dB
dB
R1 = 2.0 kΩ, R2 = 3.3 kΩ
Frequency
f
Power Gain
High Gain
Bypass
G
Output Third Order Intercept Point
High Gain
Bypass
OIP3
Input Third Order Intercept Point
High Gain
Bypass
IIP3
Out Ref P1dB
High Gain
Bypass
MHz
dB
dBm
dBm
dBm
P1dBout
MC13821 Data Sheet: Technical Data, Rev. 1.5
26
Freescale Semiconductor
Application Information
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic
Symbol
Minimum
Typical
Maximum
-5
—
-4.0
—
-3
—
1.3
3.2
1.49
4.2
1.65
6
2.3
2
2.8
4
4.5
20
mA
µA
Rbias R1 Value
—
2.0
—
kΩ
Rstability R2 Value
—
3.3
—
kΩ
—
—
-10
-9.7
-8
-8
13
-4.5
14
-3.6
15
-2.9
-19
-3
-20
-3.8
—
—
—
—
-10
-9.1
-9
-8
In Ref P1dB
High Gain
Bypass
P1dBin
Noise Figure
High Gain
Bypass
NF
Current Drain
High Gain
Bypass
ICC
Input Return Loss
High Gain
Bypass
S11
Gain
High Gain
Bypass
S21
Reverse Isolation
High Gain
Bypass
S12
Output Return Loss
High Gain
Bypass
S22
Unit
dBm
dB
dB
dB
dB
dB
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
27
Printed Circuit Board
4
Printed Circuit Board
R2
L2
Q1
C2
R1
C3
C4
L1
C1
MC13821
V1R1
Note: Components C5 and C6 are located on the back of the board
Note: Components C5 and C6 are located on the back of the board
Figure 14. Front Side
C5 C6
Figure 15. Back Side
MC13821 Data Sheet: Technical Data, Rev. 1.5
28
Freescale Semiconductor
Printed Circuit Board
Table 10. Bill of Materials
Component
Value
Case
Manufacturer
Comments
C1
22 pF
402
Murata
Input match
C2
1.0 pF
402
Taiyo Yuden
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 µF
402
Murata
Low freq bypass
C5
.01 µF
402
Murata
Low freq bypass
C6
33 pF
402
Murata
RF bypass
L2
5.6 nH
1005
CoilCraft
Output match
L1
5.6 nH
1005
CoilCraft
Input match
R1
1.2 or 2 kΩ
402
KOA
Bias for 4.45 or 2.8 mA
R2
620 or 680 Ω
402
KOA
Stability
Q1
MC13821
QFN-12
Freescale
1575 MHz
1960 MHz (16 dB Gain)
C1
33 pF
402
Murata
Input match
C2
0.9 pF
402
Taiyo Yuden
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 µF
402
Murata
Low freq bypass
C5
.01 µF
402
Murata
Low freq bypass
C6
33 pF
402
Murata
RF bypass
L1
4.3 nH
1005
CoilCraft
Input match
L2
2.7 nH
1005
Coilcraft
Output match
R1
1.2 or 2 kΩ
402
KOA
Bias for 4.45 or 2.8 mA
R2
3.3 kΩ
402
KOA
Stability
Q1
MC13821
QFN-12
Freescale
1960 MHz (11.5 dB Gain)
C1
15 pF
402
Murata
Input match
C2
1.2 pF
402
Taiyo Yuden
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 µF
402
Murata
Low freq bypass
C5
.01 µF
402
Murata
Low freq bypass
C6
33 pF
402
Murata
RF bypass
L1
4.3 nH
1005
CoilCraft
Input match
L2
2.7 nH
1005
CoilCraft
Output match
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
29
Printed Circuit Board
Table 10. Bill of Materials (continued)
Component
Value
Case
Manufacturer
Comments
R2
68 Ω
402
KOA
Stability
R1
1.3 kΩ
402
KOA
Bias for 5.5 mA max.
Q1
MC13821
QFN-12
Freescale
1960 MHz (15 dB Gain)
C1
8 pF
402
Murata
Input match
C2
1.2 pF
402
Taiyo Yuden
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 µF
402
Murata
Low freq bypass
C5
.01 µF
402
Murata
Low freq bypass
C6
33 pF
402
Murata
RF bypass
L1
4.7 nH
1005
CoilCraft
Input match
L2
2.4 nH
1005
CoilCraft
Output match
R1
1.8 kΩ
402
KOA
Bias for 5.5 mA max.
R2
330 Ω
402
KOA
Stability
Q1
MC13821
QFN-12
Freescale
2140 MHz (Refer to Figure 11)
C1
33 pF
402
Murata
Input match
C2
0.9 pF
402
Taiyo Yuden
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 µF
402
Murata
Low freq bypass
C5
.01 µF
402
Murata
Low freq bypass
C6
33 pF
402
Murata
RF bypass
L2
2.7 nH
1005
CoilCraft
Output match
L1
4.3 nH
1005
CoilCraft
Input match
R1
1.2 or 2 kΩ
402
KOA
Bias for 4.45 or 2.8 mA
R2
3.3 kΩ
402
KOA
Stability
Q1
MC13821
QFN-12
Freescale
2140 MHz (Refer to Figure 12)
C1
8 pF
402
Murata
Input match
C2
1 pF
402
Murata
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 µF
402
Murata
Low freq bypass
C5
.01 µF
402
Murata
Low freq bypass
MC13821 Data Sheet: Technical Data, Rev. 1.5
30
Freescale Semiconductor
Printed Circuit Board
Table 10. Bill of Materials (continued)
Component
Value
Case
Manufacturer
Comments
C6
33 pF
402
Murata
RF bypass
L1
4.3 nH
1005
CoilCraft
Input match
L2
2.7 nH
1005
CoilCraft
Output match
R1
1.2 kΩ
402
KOA
Bias for 5.5 mA
R2
3.3 kΩ
402
KOA
Stability
R3
10 Ω
402
KOA
Stability
Q1
MC13821
QFN-12
Freescale
2140 MHz (Refer to Figure 11)
C1
33 pF
402
Murata
Input match
C2
1.0 pF
402
Taiyo Yuden
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 µF
402
Murata
Low freq bypass
C5
.01 µF
402
Murata
Low freq bypass
C6
33 pF
402
Murata
RF bypass
L1
4.3 nH
1005
CoilCraft
Input match
L2
2.7 nH
1005
Coilcraft
Output match
R1
1.5 kΩ
402
KOA
Bias for 4.45 mA
R2
10 kΩ
402
KOA
Stability
Q1
MC13821
QFN-12
Freescale
C1
33 pF
402
Murata
Input match
C2
0.6 pF
402
Taiyo Yuden
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 µF
402
Murata
Low freq bypass
C5
.01 µF
402
Murata
Low freq bypass
C6
33 pF
402
Murata
RF bypass
L1
2.7 nH
1005
CoilCraft
Input match
L2
2.4 nH
1005
CoilCraft
Output match
R2
3.3 kΩ
402
KOA
Stability
R1
1.2 or 2 kΩ
402
KOA
Bias for 4.5 or 2.8 mA
Q1
MC13821
QFN-12
Freescale
2400 MHz
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
31
Scattering Parameters
5
Scattering Parameters
Table 11. Active Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band grounded, Gain = 2.75 V, Enable = 2.75 V, Rbias resistor R1 = 2 kΩ), ICC = 2.6 mA
f
GHz)
S21
S11
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
0.7
0.852
-29.22
7.029
142.03
0.021
75.16
0.956
-14.42
0.8
0.836
-32.9
7.279
137.43
0.024
73.13
0.946
-15.76
0.9
0.803
-36.02
7.034
133.48
0.027
70.95
0.966
-19.49
1
0.814
-42.84
6.856
127
0.029
66.71
0.887
-17.77
1.1
0.782
-42.6
6.687
125.21
0.031
68.53
0.924
-22.03
1.2
0.772
-45.55
6.29
122.03
0.034
65.83
0.898
-23.58
1.3
0.752
-47.28
6.242
116.95
0.036
65.66
0.897
-25.56
1.4
0.718
-50.24
6.082
114.12
0.039
64.76
0.912
-26.44
1.5
0.672
-52.29
5.696
112.14
0.04
61.29
0.943
-30.51
1.6
0.688
-49.98
5.662
107.49
0.043
61.9
0.882
-35.18
1.7
0.695
-53.95
5.499
104.8
0.044
60.95
0.865
-35.67
1.8
0.686
-54.86
5.348
101.62
0.047
60.42
0.866
-36.55
1.9
0.653
-57.19
5.334
97.81
0.05
59.47
0.892
-41.25
2
0.661
-57.81
5.098
95.37
0.052
60.14
0.863
-42.78
2.1
0.646
-60.4
5.035
90.65
0.058
56
0.844
-46.94
2.2
0.639
-62.48
4.766
86.29
0.058
52.65
0.818
-49.01
2.3
0.628
-61.9
4.575
86.75
0.059
51.95
0.8
-50.61
2.4
0.608
-63.13
4.529
82.12
0.06
52.38
0.78
-51.67
2.5
0.61
-63.96
4.366
79.31
0.063
53.62
0.779
-52.93
2.6
0.609
-65.96
4.251
77.33
0.067
51.2
0.777
-54.38
2.7
0.637
-69.48
4.307
75.4
0.072
50.86
0.811
-57.38
2.8
0.57
-74.63
4.168
68.94
0.073
46.36
0.756
-63.02
2.9
0.536
-75.03
3.933
65.73
0.075
42.72
0.716
-62.94
3
0.515
-75.6
3.819
62.83
0.074
42.14
0.697
-64.16
3.1
0.506
-75.28
3.665
61.56
0.074
39.24
0.683
-63.26
3.2
0.489
-73.7
3.572
60.5
0.07
39.17
0.702
-63.69
3.3
0.483
-74.54
3.523
58.09
0.07
43.49
0.716
-66.71
3.4
0.487
-76.91
3.495
55.25
0.075
46.63
0.714
-70.44
3.5
0.488
-78.25
3.484
51.93
0.082
45.9
0.699
-74.6
MC13821 Data Sheet: Technical Data, Rev. 1.5
32
Freescale Semiconductor
Scattering Parameters
Table 12. Bypass Mode Scattering Parameters
((VCC1 and VCC3 = 2.75V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1= 2 kΩ), ICC = 3.0 µA)
f
(GHz)
S11
S21
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
0.7
0.549
-51.13
0.578
17.83
0.583
18.83
0.578
-41.21
0.8
0.511
-53.94
0.596
13.17
0.6
14.15
0.542
-42.25
0.9
0.47
-55.73
0.608
8.45
0.614
10.08
0.524
-45.13
1
0.458
-59.65
0.615
3.3
0.617
5.12
0.455
-43.82
1.1
0.434
-58.46
0.624
1.11
0.628
2.52
0.453
-46.74
1.2
0.421
-59.33
0.629
-2.37
0.635
-0.96
0.42
-48.02
1.3
0.404
-59.6
0.634
-5.19
0.639
-3.8
0.407
-48.56
1.4
0.384
-61.06
0.633
-8.02
0.639
-6.66
0.394
-47.62
1.5
0.36
-62.48
0.638
-10.97
0.641
-9.5
0.388
-49.7
1.6
0.362
-59.49
0.638
-13.09
0.643
-11.89
0.374
-53.61
1.7
0.367
-60.21
0.639
-15.43
0.643
-14.26
0.353
-53.66
1.8
0.363
-60.18
0.64
-17.77
0.645
-16.58
0.335
-53.3
1.9
0.35
-63.26
0.645
-20.27
0.649
-19.08
0.348
-53.86
2
0.355
-63.18
0.639
-22.63
0.643
-21.39
0.327
-54.83
2.1
0.335
-66.36
0.64
-24.42
0.643
-23.2
0.342
-57.82
2.2
0.332
-65.87
0.64
-26.93
0.645
-25.56
0.324
-60.95
2.3
0.322
-63.97
0.64
-28.95
0.644
-27.79
0.309
-63.15
2.4
0.32
-63.46
0.639
-31.11
0.642
-30.01
0.294
-64.43
2.5
0.319
-63.28
0.632
-33.88
0.638
-32.07
0.279
-64.25
2.6
0.323
-63.96
0.627
-35.14
0.633
-33.64
0.274
-62.49
2.7
0.354
-65.66
0.64
-36.78
0.645
-35.11
0.297
-62.47
2.8
0.317
-73.59
0.637
-40.56
0.643
-38.92
0.282
-72.82
2.9
0.296
-74.61
0.622
-42.77
0.629
-41.1
0.245
-73.08
3
0.284
-74.6
0.616
-44.14
0.621
-42.65
0.23
-70.36
3.1
0.283
-72.89
0.616
-45.7
0.619
-43.94
0.236
-67.03
3.2
0.274
-72.04
0.618
-47.38
0.622
-45.84
0.245
-68.8
3.3
0.269
-74.74
0.618
-50.21
0.623
-48.62
0.238
-75.51
3.4
0.265
-77.34
0.609
-52.62
0.615
-51.03
0.212
-77.5
3.5
0.261
-76.71
0.603
-54.36
0.607
-52.96
0.194
-77.94
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
33
Scattering Parameters
Table 13. Active Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band grounded, Gain and Enable = 2.75 V, Rbias resistor R1 = 1.2 kΩ, ICC = 4.8 mA)
f
(GHz)
S11
S21
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
0.7
0.784
-32.04
10.275
132.74
0.021
72.91
0.92
-15.77
0.8
0.765
-35.9
10.162
127.59
0.022
71.83
0.907
-16.82
0.9
0.721
-39
9.646
122.89
0.025
68.97
0.923
-20.31
1
0.724
-45.16
9.184
116.28
0.027
67.34
0.842
-18.21
1.1
0.692
-44.87
8.773
114.36
0.029
67.52
0.877
-22.39
1.2
0.678
-47.17
8.23
110.64
0.033
67.56
0.846
-23.69
1.3
0.662
-48.64
7.98
106.21
0.034
66.62
0.845
-25.47
1.4
0.626
-51.75
7.638
103.36
0.037
64.27
0.858
-25.98
1.5
0.576
-53.11
7.185
100.91
0.039
63.47
0.893
-29.67
1.6
0.594
-49.59
6.972
96.71
0.041
62.78
0.835
-34.46
1.7
0.599
-52.85
6.691
93.81
0.042
62.14
0.816
-34.49
1.8
0.594
-54.14
6.444
90.92
0.044
62.34
0.817
-35.3
1.9
0.56
-56.18
6.34
87.3
0.049
60.88
0.843
-39.86
2
0.568
-57.13
6.029
85.12
0.05
60.42
0.817
-41.18
2.1
0.548
-58.62
5.885
80.96
0.054
57.9
0.798
-45.47
2.2
0.546
-59.79
5.568
76.96
0.056
56.61
0.774
-46.98
2.3
0.543
-59.25
5.318
76.8
0.057
54.83
0.761
-48.63
2.4
0.532
-59.9
5.189
72.95
0.059
54.79
0.742
-49.56
2.5
0.527
-61.63
4.979
70.13
0.062
53.59
0.741
-50.7
2.6
0.529
-62.78
4.816
68.35
0.064
53.44
0.743
-52
2.7
0.551
-67.21
4.839
66.22
0.072
52.3
0.768
-55.57
2.8
0.485
-70.76
4.649
60.62
0.072
47.22
0.715
-60.12
2.9
0.454
-71.28
4.382
57.65
0.074
44.14
0.68
-60.09
3
0.434
-70.94
4.207
55.39
0.072
42.21
0.666
-60.36
3.1
0.433
-67.82
4.048
54.44
0.068
41.81
0.669
-60.12
3.2
0.436
-66.18
3.936
52.8
0.069
43.96
0.674
-61.04
3.3
0.437
-68.3
3.847
50.72
0.072
47.68
0.684
-63.24
3.4
0.437
-72.51
3.81
48.36
0.078
46.81
0.687
-66.49
3.5
0.433
-73.15
3.767
45.48
0.082
45.71
0.676
-70.55
MC13821 Data Sheet: Technical Data, Rev. 1.5
34
Freescale Semiconductor
Scattering Parameters
Table 14. Bypass Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1 = 1.2 kΩ, ICC = 3 µA)
f
(GHz)
S11
S21
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
0.7
0.556
-44.11
0.573
20.27
0.573
20.39
0.595
-42.94
0.8
0.514
-46.8
0.591
15.11
0.591
15.3
0.549
-43.78
0.9
0.475
-49.46
0.6
10.38
0.599
10.66
0.511
-43.02
1
0.459
-50.05
0.618
6.77
0.617
6.98
0.479
-46.66
1.1
0.427
-50.66
0.623
3.34
0.621
3.51
0.462
-47.17
1.2
0.412
-51.99
0.633
-0.34
0.632
-0.19
0.43
-49.25
1.3
0.391
-52.85
0.635
-3.09
0.634
-2.98
0.421
-49.35
1.4
0.379
-53.91
0.637
-6.45
0.636
-6.18
0.395
-50.53
1.5
0.368
-53.94
0.638
-8.92
0.638
-8.66
0.384
-51.37
1.6
0.358
-54.86
0.64
-11.49
0.639
-11.33
0.374
-52.64
1.7
0.352
-55.36
0.641
-14.09
0.64
-13.92
0.358
-53.9
1.8
0.346
-55.58
0.641
-16.37
0.641
-16.17
0.345
-54.87
1.9
0.341
-55.61
0.641
-18.68
0.641
-18.47
0.334
-56.07
2
0.334
-56.07
0.638
-20.97
0.639
-20.85
0.321
-56.45
2.1
0.329
-56.92
0.635
-23.12
0.633
-22.91
0.312
-56.2
2.2
0.319
-57.96
0.636
-24.75
0.636
-24.45
0.314
-57.47
2.3
0.308
-57.61
0.64
-26.81
0.64
-26.59
0.306
-59.76
2.4
0.299
-57.89
0.641
-29.13
0.64
-28.92
0.295
-61.28
2.5
0.293
-59.25
0.64
-31.4
0.642
-31.04
0.291
-62.5
2.6
0.285
-60.49
0.636
-33.55
0.636
-33.11
0.277
-62.84
2.7
0.279
-62.48
0.636
-35.59
0.635
-35.51
0.272
-65.72
2.8
0.274
-64.02
0.634
-37.84
0.633
-37.69
0.258
-67.26
2.9
0.267
-66.58
0.629
-39.74
0.63
-39.66
0.247
-67.95
3
0.27
-68.28
0.623
-42.19
0.623
-42.06
0.232
-68.55
3.1
0.264
-70.53
0.618
-43.48
0.616
-43.19
0.241
-64.77
3.2
0.261
-72.44
0.617
-45.42
0.616
-45.19
0.241
-69.24
3.3
0.26
-73.31
0.616
-47.61
0.615
-47.35
0.227
-74.2
3.4
0.26
-73.49
0.613
-49.49
0.613
-49.26
0.209
-76.39
3.5
0.265
-73.26
0.61
-52.15
0.61
-51.84
0.179
-78.56
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
35
Scattering Parameters
Table 15. Noise Parameters
(VCC = 2.7 V, Enable = 2.75 V, Rbias = 1.2 kΩ, ICC = 4.8 mA)
f
(GHz)
NFmin
(dB)
1
Gamma Opt
Rn
(Ω)
rn
(Ω)
GNF
(dB)
K
Mag
Ang
1.11
0.27
25.3
14
0.28
26.21
0.63
1.575
0.99
0.29
40.8
13
0.26
22.63
0.74
1.9
0.96
0.30
46.9
12.5
0.25
20.83
0.70
2.14
0.96
0.30
50.1
12.5
0.25
19.8
0.78
2.4
0.97
0.30
54.0
12
0.24
18.3
0.89
Table 16. Noise Parameters
(VCC = 2.7 V, Enable = 2.75 V, Rbias = 2 kΩ, ICC = 2.8 mA)
f
(GHz)
NFmin
(dB)
1
Gamma Opt
Rn
(Ω)
rn
(Ω)
GNF
(dB)
K
Mag
Ang
1.16
0.23
27.6
15.5
0.31
26.09
0.48
1.575
1.02
0.35
39.0
15
0.3
22.57
0.56
1.9
0.97
0.37
46.2
14
0.28
20.81
0.53
2.14
0.96
0.37
49.7
14
0.28
19.79
0.61
2.4
0.95
0.37
54.1
13.5
0.27
18.3
0.77
MC13821 Data Sheet: Technical Data, Rev. 1.5
36
Freescale Semiconductor
Scattering Parameters
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (Ω)
K
1.575
1.02
0.30/_38.2
13.5
0.74
Figure 16. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 1.2 kΩ
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (Ω)
K
1.575
0.97
0.34/_39.1
17.0
0.56
Figure 17. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 2 kΩ
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
37
Scattering Parameters
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (Ω)
K
1.9
0.96
0.30/_46.9
12.5
0.68
Figure 18. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias =1.2 kΩ
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (Ω)
K
1.9
0.97
0.37/_46.2
14.0
0.50
Figure 19. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias = 2 kΩ
MC13821 Data Sheet: Technical Data, Rev. 1.5
38
Freescale Semiconductor
Scattering Parameters
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (Ω)
K
2.1
0.96
0.30/_50.1
12.5
0.76
Figure 20. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 kΩ
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (Ω)
K
2.1
0.96
0.37/_49.7
14.0
0.58
Figure 21. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 kΩ
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
39
Scattering Parameters
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (Ω)
K
2.3
0.96
0.30/_52.8
12.0
0.85
Figure 22. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias =1.2 kΩ
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (Ω)
K
2.3
0.95
0.38/_53
13.5
0.70
Figure 23. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias = 2 kΩ
MC13821 Data Sheet: Technical Data, Rev. 1.5
40
Freescale Semiconductor
Packaging
6
Packaging
Figure 24. Outline Dimensions for QFN-12
(Case Outline 1345-01, Issue A)
MC13821 Data Sheet: Technical Data, Rev. 1.5
Freescale Semiconductor
41
7
Reference Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
Definitions of these types are available at: http://www.freescale.com.
8
Revision History
Table 17 summarizes revisions to this document since the previous release (Rev. 1.4).
Table 17. Revision History
Location
Throughout
Revision
Changed document type from “Advance Information” to” Technical Data.”
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