VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level BENEFITS ADD-A-PAK • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate PRODUCT SUMMARY IT(AV) or IF(AV) 105 A • Up to 1600 V • High surge capability MECHANICAL DESCRIPTION • Easy mounting on heatsink The ADD-A-PAK Generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES IT(AV) or IF(AV) 85 °C 105 IO(RMS) As AC switch 235 ITSM, IFSM 50 Hz 2000 60 Hz 2094 I2t 50 Hz 20 60 Hz 18.26 I2√t VRRM TStg TJ Document Number: 94628 Revision: 17-May-10 Range UNITS A kA2s 200 kA2√s 400 to 1600 V - 40 to 130 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 04 400 500 400 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 VSK.105 IRRM, IDRM AT 130 °C mA 20 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current (thyristors) IT(AV) Maximum average forward current (diodes) IF(AV) Maximum continuous RMS on-state current, as AC switch TEST CONDITIONS VALUES 180° conduction, half sine wave, TC = 85 °C IO(RMS) I(RMS) or UNITS 105 235 I(RMS) A t = 10 ms Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t (1) Maximum value or threshold voltage Maximum value of on-state slope resistance Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current VT(TO) (2) rt (2) No voltage reapplied 100 % VRRM reapplied 2000 Sinusoidal half wave, initial TJ = TJ maximum 2094 1682 1760 20 No voltage reapplied Initial TJ = TJ maximum 100 % VRRM reapplied 18.26 14.14 12.91 t = 0.1 ms to 10 ms, no voltage reapplied TJ = TJ maximum 200 Low level (3) 0.98 High level (4) Low level (3) High level (4) VTM ITM = π x IT(AV) VFM IFM = π x IF(AV) dI/dt TJ = TJ maximum TJ = TJ maximum TJ = 25 °C kA2s 1.12 2.7 2.34 kA2√s V mΩ 1.8 V TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 150 A/μs Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 250 Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 mA Notes (1) I2t for time t = I2√t x √t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) (3) 16.7 % x π x I AV < I < π x IAV (4) I > π x I AV www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94628 Revision: 17-May-10 VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 105 A TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage TEST CONDITIONS VALUES PGM 12 PG(AV) 3 IGM 3 - VGM 10 TJ = - 40 °C Maximum gate voltage required to trigger VGT UNITS W A 4.0 Anode supply = 6 V resistive load TJ = 25 °C V 2.5 TJ = 125 °C 1.7 TJ = - 40 °C 270 Anode supply = 6 V resistive load Maximum gate current required to trigger IGT TJ = 25 °C mA Maximum gate voltage that will not trigger VGD TJ = 125 °C, rated VDRM applied 0.25 V Maximum gate current that will not trigger IGD TJ = 125 °C, rated VDRM applied 6 mA VALUES UNITS 20 mA 3000 (1 min) 3600 (1 s) V 1000 V/μs VALUES UNITS - 40 to 130 °C 150 TJ = 125 °C 80 BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current at VRRM, VDRM IRRM, IDRM TJ = 130 °C, gate open circuit Maximum RMS insulation voltage VINS 50 Hz Maximum critical rate of rise of off-state voltage dV/dt TJ = 130 °C, linear to 0.67 VDRM THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating temperature range TEST CONDITIONS TJ Storage temperature range TStg Maximum internal thermal resistance, junction to case per leg RthJC DC operation 0.22 Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.1 °C/W A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink Mounting torque ± 10 % busbar 4 Nm 3 Approximate weight Case style JEDEC 75 g 2.7 oz. TO-240AA compatible ΔR CONDUCTION PER JUNCTION DEVICES VSK.105.. SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.04 0.048 0.063 0.085 0.125 0.033 0.052 0.067 0.088 0.127 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94628 Revision: 17-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series Maximum average on-state power loss (W) 130 RthJC (DC) = 0.22°C/W 120 110 100 90 180° 120° 90° 60° 30° 80 70 0 Maximum allowable case temperature (°C) ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A 20 40 60 80 100 120 180° 120° 90° 60° 30° DC RMS limit Per leg, Tj = 130°C 0 20 40 60 80 100 120 140 160 180 Average on-state current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics 1800 130 RthJC (DC) = 0.22°C/W 120 110 100 DC 180° 120° 90° 60° 30° 90 80 70 0 At any rated load condition and with rated Vrrm applied following surge Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100s 1600 1400 1200 1000 Per leg 800 20 40 60 80 100 120 140 160 180 1 10 100 Number of equal amplitude half cycle current pulses (N) Average on-state current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 2000 200 Peak half sine wave on-state current (A) Maximum average on-state power loss (W) 260 240 220 200 180 160 140 120 100 80 60 40 20 0 Average on-state current (A) Peak half sine wave on-state current (A) Maximum allowable case temperature (°C) Vishay Semiconductors 180° 120° 90° 60° 30° 180 160 140 120 RMS limit 100 80 60 40 20 Per leg, Tj = 130°C 0 0 20 40 60 80 100 120 Average on-state current (A) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 1800 1600 Maximum Non-repetitive Surge Current Versus Pulse Train Duration. Control of conduction may not be maintained. Initial Tj = 130°C No Voltage Reapplied Rated Vrrm reapplied 1400 1200 1000 800 0.01 Per leg 0.1 1 Pulse train duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94628 Revision: 17-May-10 VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 105 A Maximum total on-state power loss (W) 400 350 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 2°C/W 180° 120° 90° 60° 30° 300 250 200 150 100 VSK.105 Series Per module Tj = 130°C 50 0 0 40 80 120 160 200 Total RMS output current (A) 240 0 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Fig. 7 - On-State Power Loss Characteristics Maximum total power loss (W) 700 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 2 °C/W 180° (sine) 180° (rect) 600 500 400 ∼ 300 200 2 x VSK.105 Series single phase bridge connected Tj = 130°C 100 0 0 40 80 120 160 200 0 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Total output current (A) Fig. 8 - On-State Power Loss Characteristics Maximum total power loss (W) 900 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 1 °C/W 800 700 600 120° (rect) 500 400 300 200 3 x VSK.105 Series three phase bridge connected Tj = 130°C 100 0 0 40 80 120 160 Total output current (A) 200 240 0 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94628 Revision: 17-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A Vishay Semiconductors Instantaneous on-state current (A) 1000 Per leg 100 10 Tj = 130°C Tj = 25°C 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Instantaneous on-state voltage (V) Transient thermal impedance Z thJC (°C/W) Fig. 10 - On-State Voltage Drop Characteristics 1 Steady state value RthJC = 0.22 °C/W (DC operation) 0.1 0.01 Per leg 0.001 0.001 0.01 0.1 1 10 Square wave pulse duration (s) Fig. 11 - Thermal Impedance ZthJC Characteristics Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for <= 30% rated di/ dt: 15 V, 40 ohms tr = 1 µs, tp >= 6 µs 10 (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = 125 °C 1 TJ = -40 °C (b) TJ = 25 °C Instantaneous gate voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 VSK. IRK.105.. Series 0.1 1 Frequenc y Limited by PG(AV) 10 100 1000 Instantaneous gate current (A) Fig. 12 - Gate Characteristics www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94628 Revision: 17-May-10 VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 105 A ORDERING INFORMATION TABLE Device code VSK T 105 1 2 3 / 16 4 1 - Module type 2 - Circuit configuration (see end of datasheet) 3 - Current code (105 A) 4 - Voltage code (see Voltage Ratings table) Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKT VSKH (1) 1 VSKL (1) ~ 1 + 2 3 + (2) 3 4 5 7 6 (3) G1 K1 K2 G2 (4) (5) (7) (6) - 1 2 + 2 (2) 3 4 5 - (1) ~ 1 2 (2) VSKN (1) ~ 3 7 6 (3) G1 K1 (4) (5) + (2) 4 5 (3) K2 G2 (7) (6) + (3) G1 K1 (4) (5) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94628 Revision: 17-May-10 www.vishay.com/doc?95368 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Thyristor DIMENSIONS in millimeters (inches) 29 ± 0.5 (1 ± 0.020) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 18 (0.7) REF. 30 ± 1 (1.18 ± 0.039) 15.5 ± 0.5 (0.6 ± 0.020) 24 ± 0.5 (1 ± 0.020) Viti M5 x 0.8 Screws M5 x 0.8 6.7 ± 0.3 (0.26 ± 0.012) Fast-on tab 2.8 x 0.8 (0.110 x 0.03) Document Number: 95368 Revision: 11-Nov-08 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) 5.8 ± 0.25 (0.228 ± 0.010) 15 ± 0.5 (0.59 ± 0.020) For technical questions, contact: [email protected] 4 ± 0.2 (0.157 ± 0.008) 7 6 4 5 3 2 1 6.3 ± 0.2 (0.248 ± 0.008) 22.6 ± 0.2 (0.89 ± 0.008) 80 ± 0.3 (3.15 ± 0.012) www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1