FDMS7580 N-Channel Power Trench® MOSFET 25 V, 7.5 mΩ Features General Description Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design Control MOSFET for Synchronous Buck Converters 100% UIL tested Notebook RoHS Compliant Server Telecomm High Efficiency DC-DC Switch Mode Power Supplies Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 28 49 (Note 1a) -Pulsed 15 A 60 Single Pulse Avalanche Energy EAS Ratings 25 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 32 27 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 4.6 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7580 Device FDMS7580 ©2009 Fairchild Semiconductor Corporation FDMS7580 Rev.C Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7580 N-Channel Power Trench® MOSFET December 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 3.0 V 25 V 18 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C -6 VGS = 10 V, ID = 15 A 5.9 7.5 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 12 A 8.3 11.1 VGS = 10 V, ID = 15 A, TJ = 125 °C 8.3 10.6 VDD = 5 V, ID = 15 A 63 gFS Forward Transconductance 1.0 1.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 894 1190 pF 277 370 pF 53 80 pF 1.1 2.2 Ω 7.3 15 ns 2.4 10 ns 17 31 ns 2.1 10 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 13 V, ID = 15 A, VGS = 10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to 10 V 14 20 nC Total Gate Charge VGS = 0 V to 4.5 V VDD = 13 V ID = 15 A 6.5 10 nC Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge 2.9 nC 1.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.73 1.1 VGS = 0 V, IS = 15 A (Note 2) 0.85 1.2 IF = 15 A, di/dt = 100 A/µs IF = 15 A, di/dt = 300 A/µs V 19 34 ns 5.1 10 nC 15 27 ns 8.9 18 NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper b.125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %. 3. EAS of 32 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 8 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 12 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7580 Rev.C 2 www.fairchildsemi.com FDMS7580 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 60 VGS = 4.0 V ID, DRAIN CURRENT (A) 50 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 40 VGS = 10 V 30 VGS = 3.5 V 20 10 VGS = 3.0 V 0 0 1 2 3 4 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5 V 8 VGS = 3.5 V 6 4 VGS = 4.0 V 2 0 Figure 1. On-Region Characteristics 10 20 30 40 ID, DRAIN CURRENT (A) 50 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 40 I = 15 A 1.5 D VGS = 10 V rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 4.5 V 0 5 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 15 A 20 TJ = 125 oC 10 TJ = 25 oC 0 -50 -25 0 25 50 75 2 100 125 150 IS, REVERSE DRAIN CURRENT (A) 40 TJ = 150 oC 30 TJ = 25 oC 20 TJ = -55 oC 10 0 2 8 10 100 VDS = 5 V 1 6 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 50 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 60 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 30 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 3.0 V 3 4 VGS = 0 V 10 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 5 TJ = 150 oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS7580 Rev.C 3 1.2 www.fairchildsemi.com FDMS7580 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 ID = 15 A 1000 8 Ciss VDD = 13 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 10 V VDD = 16 V 4 2 Coss 100 f = 1 MHz VGS = 0 V 20 0.1 0 0 2 4 6 8 10 12 Crss 14 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 50 20 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) VGS = 10 V TJ = 25 oC TJ = 100 oC TJ = 125 oC 40 30 VGS = 4.5 V 20 Limited by Package 10 o RθJC = 4.6 C/W 1 0.01 0.1 1 10 0 25 30 50 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 µs 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 125 oC/W DC TA = 25 oC 0.1 1 10 100 SINGLE PULSE RθJA = 125 oC/W VGS = 10 V TA = 25 oC 100 10 1 0.5 -4 10 VDS, DRAIN to SOURCE VOLTAGE (V) -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area FDMS7580 Rev.C 150 1000 10 0.01 0.01 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7580 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve FDMS7580 Rev.C 5 www.fairchildsemi.com FDMS7580 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS7580 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout FDMS7580 Rev.C 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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