FAIRCHILD FDMS7672

FDMS7672
N-Channel PowerTrench® MOSFET
30 V, 5.0 mΩ
Features
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
„ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 19 A
„ Max rDS(on) = 6.9 mΩ at VGS = 4.5 V, ID = 15 A
„ Advanced Package and Silicon design for low rDS(on) and high
efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
Applications
„ IMVP Vcore Switching for Notebook
„ MSL1 robust package design
„ VRM Vcore Switching for Desktop and Server
„ 100% UIL tested
„ OringFET / Load Switch
„ RoHS Compliant
„ DC-DC Conversion
Bottom
Top
S
D
D
D
Pin 1
S
S
G
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
(Note 4)
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
28
80
(Note 1a)
19
(Note 3)
72
-Pulsed
A
90
Single Pulse Avalanche Energy
EAS
Ratings
30
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
48
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
2.6
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS7672
Device
FDMS7672
©2009 Fairchild Semiconductor Corporation
FDMS7672 Rev.D
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS7672 N-Channel PowerTrench® MOSFET
April 2009
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
µA
IGSS
Gate to Source Leakage Current, Forward
VGS = 20 V, VDS = 0 V
100
nA
3.0
V
30
V
15
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 µA, referenced to 25 °C
-7
VGS = 10 V, ID = 19 A
3.6
5.0
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 15 A
5.2
6.9
VGS = 10 V, ID = 19 A, TJ = 125 °C
4.9
6.8
VDS = 5 V, ID = 19 A
64
gFS
Forward Transconductance
1.25
2.0
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2225
2960
pF
685
910
pF
90
130
pF
0.7
1.5
Ω
13
23
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
VDD = 15 V, ID = 19 A,
VGS = 10 V, RGEN = 6 Ω
5
10
ns
25
40
ns
4
10
ns
Total Gate Charge
VGS = 0 V to 10 V
31
44
nC
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 19 A
14
19
nC
7.6
nC
3.7
nC
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
Drain-Source Diode Characteristics
VGS = 0 V, IS = 2.1 A
(Note 2)
0.7
0.95
VGS = 0 V, IS = 19 A
(Note 2)
0.8
1.1
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
32
51
ns
Qrr
Reverse Recovery Charge
14
24
nC
ta
Reverse Recovery Fall Time
15
nC
tb
Reverse Recovery Rise Time
17
nC
S
Softness (tb/ta)
1.1
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 19 A, di/dt = 100 A/µs
IF = 19 A, di/dt = 300 A/µs
V
26
42
ns
25
40
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 17 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7672 Rev. D
2
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FDMS7672 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
90
ID, DRAIN CURRENT (A)
VGS = 5 V
VGS = 4 V
60
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
30
VGS = 3.5 V
0
0.0
0.5
1.0
1.5
6
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
5
VGS = 3.5 V
4
VGS = 4 V
3
VGS = 4.5 V
2
1
2.0
0
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
90
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
16
ID = 19 A
VGS = 10 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
ID = 19 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
12
8
TJ = 125 oC
4
TJ = 25 oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
90
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 5 V
0
VDS = 5 V
60
TJ = 150 oC
30
TJ = 25 oC
TJ = -55 oC
1
2
3
4
10
TJ = 150 oC
1
5
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
0
0
VGS = 0 V
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS7672 Rev.D
3
1.2
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FDMS7672 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
ID = 19 A
8
VDD = 10 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 15 V
6
VDD = 20 V
4
2
Ciss
1000
Coss
100
0
0
4
8
12
16
20
24
28
f = 1 MHz
VGS = 0 V
1
Figure 7. Gate Charge Characteristics
90
TJ =
ID, DRAIN CURRENT (A)
10
25 oC
TJ = 100 oC
TJ = 125 oC
60
VGS = 10 V
VGS = 4.5 V
30
o
RθJC = 2.6 C/W
Limited by Package
1
0.01
0.1
1
10
0
25
100
50
P(PK), PEAK TRANSIENT POWER (W)
100 µs
1 ms
10 ms
0.1
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
10 s
RθJA = 125 oC/W
DC
TA = 25 oC
0.01
0.01
0.1
1
10
150
1000
VGS = 10 V
100 200
SINGLE PULSE
Rθ JA = 125 oC/W
TA = 25 oC
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
FDMS7672 Rev.D
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
200
100
THIS AREA IS
LIMITED BY rDS(on)
100
o
Figure 9. Unclamped Inductive
Switching Capability
10
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
1
30
Figure 8. Capacitance vs Drain
to Source Voltage
50
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
ID, DRAIN CURRENT (A)
Crss
50
0.1
32
Figure 12. Single Pulse Maximum
Power Dissipation
4
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FDMS7672 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
-4
10
-3
-2
10
-1
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
Figure 15.
20
16
CURRENT (A)
di/dt = 300 A/µs
12
8
4
0
-4
0
25
50
75
100
125
150
TIMES (nS)
Figure 14. Body Diode Reverse Recovery
Characteristics
FDMS7672 Rev.D
5
www.fairchildsemi.com
FDMS7672 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS7672 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
FDMS7672 Rev.D
6
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tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used herein:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
FDMS7672 Rev.D
7
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FDMS7672 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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