NTE NTE56050

NTE56039
TRIAC, 4A Sensitive Gate
Description:
The NTE56039 is a glass passivated TRIAC in a plastic SOT89 type package designed for use in general
purpose bidirectional switching and phase control applications, where high sensitivity is required in all four
quadrants.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
RMS On–State Current (Full Sine Wave, TMB ≤ 107°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Non–Repetitive Peak On–State Current (Full Sine Wave, TJ = +25°C prior to Surge), ITSM
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 6A, IG = 0.2A, dIG/dt = 0.2A/µs)
MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Mounting Base, RthJMB
Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0K/W
Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the On–State. The rate–of–rise of current should not exceed
3A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
2.5
10
mA
MT2 (+), G (–)
–
4.0
10
mA
MT2 (–), G (–)
–
5.0
10
mA
MT2 (–), G (+)
–
11.0
25
mA
–
3.0
15
mA
MT2 (+), G (–)
–
10.0
20
mA
MT2 (–), G (–)
–
2.5
15
mA
MT2 (–), G (+)
–
4.0
20
mA
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
IGT
Latching Current
MT2 (+), G (+)
VD = 12V, IT = 0.1A
IL
VD = 12V, IT = 0.1A
Holding Current
IH
VD = 12V, IT = 0.1A
–
2.2
15
mA
On–State Voltage
VT
IT = 5A
–
1.4
1.7
V
VD = 12V, IT = 0.1A
–
0.7
1.5
V
0.25
0.4
–
V
VD = 500V, TJ = +125°C
–
0.1
0.5
mA
VDM = 335V, TJ = +125°C,
Exponential Waveform, Gate Open
–
50
–
V/µs
ITM = 6A, VD = 500V, IG = 0.1A,
dIG/dt = 5A/µs
–
2
–
µs
Gate Trigger Voltage
VGT
VD = 400V, IT = 0.1A, TJ = +125°C
Off–State Leakage Current
ID
Dynamic Characteristics
Critical Rate–of–Rise of
Off–State Voltage
dVD/dt
Gate Controlled Turn–On Time
tgt
.307 (7.8)
Max
.100 (2.54)
See
Note
.147
(3.75)
.118 (3.0)
Min
.437
(11.1)
Max
MT1 MT2
G
.100 (2.54)
.602
(15.3)
Min
.090 (2.29)
.047 (1.2)
Note: Center Pin connected to metal part of mounting surface.