BUV27 NPN Silicon Power Transistor This device is designed for use in switching regulators and motor control. Features http://onsemi.com • Low Collection Emitter Saturation Voltage • Fast Switching Speed • Pb−Free Package is Available* POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 120 Vdc Collector−Emitter Breakdown Voltage VCBO 240 Vdc Emitter−Base Voltage VEBO 7.0 Vdc IC Adc ICM 12 20 Base Current IB 4.0 Adc Total Device Dissipation (TC = 25°C) Derate above 25°C PD 70 0.56 W W/°C Operating and Storage Temperature TJ, Tstg − 65 to 150 °C Symbol Max Unit RqJC RqJA 1.78 62.5 °C/W Collector Current − Continuous − Peak (Note 1) 4 TO−220AB CASE 221A STYLE 1 1 2 3 BUV27 A Y WW G THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. BUV27G AYWW = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping BUV27 TO−220AB 50 per Rail BUV27G TO−220AB (Pb−Free) 50 per Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 1 1 Publication Order Number: BUV27/D BUV27 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Max Unit ICER Collector Cut−off Current (RBE = 50 W) VCE = 240 V, TC = 125°C 3.0 mA ICEX Collector Cut−off Current VCE = 240 V, VBE = −1.5 V, TC = 125°C 1.0 mA IEBO Emitter Cut−off Current (IC = 0) VBE = 5 V 1.0 mA Collector−Emitter Sustaining Voltage IC = 0.2 A, L = 25 mH 120 Emitter−Base Voltage (IC = 0) IE = 50 mA 7.0 VCE(sat) (Note 2) Collector−Emitter Saturation Voltage VBE(sat) (Note 2) Base−Emitter Saturation Voltage VCEO(sus) VEBO Parameter Test Conditions Min Typ V 30 V IC = 4 A, IB = 0.4 A IC = 8 A, IB = 0.8 A 0.7 1.5 V IC = 8 A, IB = 0.8 A 2.0 V 0.8 1.2 0.25 ms ms ms Resistive Load ton ts tf Turn−on Time Storage Time Fall Time VCC = 90 V, IC = 8 A VBE = −6 V, IB1 = 0.8 A RBB = 3.75 W 0.4 0.5 0.12 VCC = 90 V, IC = 8 A IB1 = 0.8 A, VBE = −5 V LB = 1 mH VCC = 90 V, IC = 8 A IB1 = 0.8 A, VBE = −5 V LB = 1 mH, TJ = 125°C 0.6 0.04 Inductive Load ts tf Storage Time Fall Time ts tf Storage Time Fall Time 2. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2% http://onsemi.com 2 ms 2.0 0.15 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BUV27 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 ZqJC(t) = r(t) RqJC RqJC = 1.785C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZqJC(t) 0.05 0.07 0.05 0.02 0.03 0.02 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k Figure 1. Thermal Response ,ICCOLLECTOR CURRENT (AMP) 20 16 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150°C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 5 ms dc 1.0 0.02 2.0 BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ TC = 25°C 5.0 10 50 20 120 150 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 2. Forward Bias Safe Operating Area PD, POWER DISSIPATION (WATTS) 0.1 TA TC 3.0 60 2.0 40 1.0 20 0 0 TC TA 0 20 40 80 60 100 120 T, TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 3 140 160 BUV27 PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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