ONSEMI NJM2670E3

NJM2670
DUAL H BRIDGE DRIVER
■ GENERAL DESCRIPTION
■ PACKAGE OUTLINE
The NJM2670 is a general-purpose 60V dual H-bridge
drive IC. It consists of a pair of H-bridges, a thermal shut
down circuit and its alarm output. The alarm output can
detect application problems and the system reliability will be
significantly improved if monitored by Micro Processor.
Therefore, it is suitable for two-phase stepper motor
application driven by microprocessor.
NJM2670D2
■ FEATURES
• Wide Voltage Range
• Wide Range of Current Control
• Thermal overload Protection
• Package Outline
NJM2670E3
(4V to 60V)
(5 to 1500mA )
(DIP-22, EMP-24)
■ PIN CONNECTION
SENSE A
VS A
INA1
VCC
ENABLE A
INA2
OUTA2
OUTA1
GND
GND
GND
GND
INB1
INB2
TSD ARM
ENABLE B
NC
NC
OUTB2
OUTB2
SENSE B
VS B
VS A
SENSE A
INA1
VCC
ENABLE A
INA2
NC
NC
OUTA2
OUTA
GND
GND
GND
GND
INB1
INB2
TSD ARM
ENABLE B
NC
NC
OUTB2
OUTB2
VS B
SENSE B
DIP-22
EMP-24
-1-
NJM2670
■ BLOCK DIAGRAM
VS A
INA1
INA2
OUTA1
OUTA2
SENSE A
ENABLE A
VCC
Thermal
Shut Down
TSD_ARM
VS B
INB1
INB2
OUTB1
OUTB2
SENSE B
ENABLE B
-2-
GND
NJM2670
■ ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
PARAMETER
SYMBOL
Maximum Supply Voltage
VMM
Logic Supply Voltage
VCC
Input Voltage Range
VIN
Output Current
IOUT
PD25
Power [email protected](GND)=25°C
PD125
Power [email protected](GND)=125°C
Operating Junction Temperature
Topr
Storage Temperature
Tstg
■ RECOMENNDO OPERATING CONDITIONS
PARAMETER
SYMBOL
Supply Voltage
Logic Voltage Range
Maximum Output Current
Total Power Dissipation
■ THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal resistance
Rthj-GND
Rthj-A
Rthj-GND
Rthj-A
RATINGS
60
7
-0.3 to 7
1.5
5
2
-40 ∼ 85
-55 ∼ 150
TEST CONDITIONS
UNIT
V
V
V
A
W
W
°C
°C
MIN.
TYP.
MAX.
UNIT
VMM
4
-
55
V
VCC
IOUT
PD
PD
4.75
-
5.00
-
5.25
1.3
5
2.2
V
A
W
W
MIN.
TYP.
MAX.
UNIT
-
11
40
13
42
-
TGND=25°C
TGND=125°C
TEST CONDITIONS
DIP22 package.
DIP22 package. Note
EMP24 package.
EMP24 package. Note
°C/W
°C/W
°C/W
°C/W
Note : All ground pins soldered onto a 20 cm2 PCB copper area with free air convection, TA=+25°C
-3-
NJM2670
■ ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
GENERAL
Icc
Quiescent current
Thermal shutdown
Off-State leak current
Thermal alarm output saturation
Dead time protection
LOGIC
Input LOW voltage
Input HIGH voltage
Input HIGH current
Input LOW current
OUTPUT
Upper transistor saturation
Lower transistor saturation
Upper diode forward
Lower diode forward
Output leakage current
Upper diode recoverly time
Lower diode recoverly time
-4-
Ttsd
Itsd-LEAK
Vtsd
Td
ViL
ViH
IiH
IiL
VOU1
VOU2
VOL1
VOL2
VfU1
VfU2
VfL1
VfL2
Lo-LEAK
TrrU
TrrL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Enable=H,IN1=IN3=L,IN
2=IN4=H
-
40
-
mA
-
170
0.5
1
-
°C
50
0.7
-
µA
V
µs
-
-
0.6
20
-
V
V
µA
mA
1.3
1.5
0.5
0.8
1.3
1.6
1.3
1.6
250
250
1.5
V
V
V
V
V
V
V
V
mA
ns
ns
TSD ARM=5V
Io=5mA
Vi=2.4V
Vi=0.4V
Io=1000mA
Io=1300mA
Io=1000mA
Io=1300mA
Io=1000mA
Io=1300mA
Io=1000mA
Io=1300mA
VMM=50V
2
-0.4
-
1.8
0.8
1.3
1.6
1.9
1.6
1.9
1
-
NJM2670
■ TYPICAL APPLICATION
1). Bipolar Stepping Motor
VMM (4 ∼ 55V)
VS A
INA1
INA2
OUTA1
Motor
OUTA2
SENSE A
CPU
or
Microprocessor
ENABLE A
VCC
VS B
TSD
VCC
TSD ARM
INB1
OUTB1
INB2
OUTB2
SENSE B
GND
ENABLE B
(VMMGND)
2). Single Phase DC Motor
VMM (4 ∼ 55V)
VS A
INA1
INA2
OUTA1
Motor
OUTA2
SENSE A
ENABLE A
CPU
or
Microprocessor
VCC
VS B
VCC
TSD
TSD ARM
INB1
INB2
OUTB1
Motor
OUTB2
SENSE B
GND
ENABLE B
(VMMGND)
-5-
NJM2670
■ TYPICAL APPLICATION 1
IC C vs. VCC
200
VIN(INA1)-h ysteresis vs. Tem perature
1
Ta= 25degC
Io=500mA
VS=48V
EN 1=E N2=H
VS=48V
R L=N otin g
EN1=EN2=H
INA2=L
INB1=INB2=L
0.8
VIN(INA1)-hysteresis [V ]
ICC [mA]
150
100
0.6
0.4
50
0.2
0
0
0
1
2
3
4
5
6
7
-50
0
50
100
150
Temperature [degC ]
VC C [V]
VIN(INA1) vs. Tem perature
VIN(IN A1)-IB vs. Tem p erature
0.8
VS=48V
RL=Nothing
EN 1=E N2=H
INA 2=L
INB 1=INB 2=L
2.4
2.2
VS=48V
RL=Nothing
EN 1=E N2=H
INA 2=L
INB 1=INB 2=L
0.6
INA1=L to H
VIN(IN A1)-IB [V ]
VIN(INA1) [V]
2
1.8
1.6
0.4
INA1= 0.4V
0.2
INA1= 2.4V
1.4
IN A1=H to L
0
1.2
1
-0.2
-50
0
50
100
150
-50
N JM 2670
V sat(D ) vs. Io
N JM 2670
V sat(U ) vs. Io
100
150
(L ot-N o.U 2009T ,D IP 16)
2
V C C=5V
V S=48V
T a=25degC
O U TA1
O U TA2
O U TB1
O U TB2
2.5
50
Temperature [degC]
(Lot-N o.U 2009T ,D IP 16)
3
0
Temperature [degC]
V C C=5 V
V S =48V
T a=25degC
O U T A1
O U T A2
O U T B1
O U T B2
1.8
1.6
V sat(U) [V ]
V sat(D) [V ]
2
1.5
1.4
1.2
1
1
0.5
0.8
0
0.6
0
0.5
1
Io [A ]
-6-
1 .5
2
0
0 .5
1
Io [A ]
1.5
2
NJM2670
■ TYPICAL APPLICATION 2
NJM2670
Diode(U) vs. Io
NJM2670
Diode(D) vs. Io
(Lot-No.U2009T,DIP16)
1.8
1.6
1.4
1.2
1.2
1
0.8
0.8
0.6
0
0.5
1
1.5
2
0
0.5
1
1.5
Io [A]
Io [A]
ICC vs. Temperature
ICC vs. Temperature
60
2
80
VCC=5V
VS=48V
RL=Nothing
IN1=IN2=H
IN3=IN4=L
EN=H
55
50
45
40
VCC=5V
VS=48V
RL=Nothing
70
60
ICC [mA]
ICC [mA]
1.4
1
0.6
VCC=5V
VS=48V
Ta=25degC
OUTA1
OUTA2
OUTB1
OUTB2
1.6
Diode(U) [V]
Diode(D) [V ]
1.8
VCC=5V
VS=48V
Ta=25degC
OUTA1
OUTA2
OUTB1
OUTB2
50
IN1=IN2=H
IN3=IN4=H
EN=H
40
EN=L
35
30
30
IN1=IN2=L
IN3=IN4=L
EN=H
20
25
20
10
-50
-25
0
25
50
75
100
125
-50
150
-25
0
Temperature [degC]
75
100
125
150
NJM2670
Vsat(U) vs. Temperature
Io=1.0A
(Lot-No.U2009T,DIP16)
Io=1.0A
(Lot-No.U2009T,DIP16)
1.4
VCC=5V
VS=48V
OUTA1
OUTA2
OUTB1
OUTB2
1
50
Temperature [degC]
NJM2670
Vsat(D) vs. Temperature
1.2
25
VCC=5V
VS=48V
OUTA1
OUTA2
OUTB1
OUTB2
Vsat(U) [V]
V sat(D) [V ]
1.35
0.8
1.3
0.6
1.25
0.4
1.2
0.2
-50
-25
0
25
50
75
Temperature [degC]
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature [degC]
-7-
NJM2670
■ TYPICAL APPLICATION 3
NJM2670
Vsat(D) vs. Temperature
Vsat(U) [V]
1
1.6
1.5
0.8
1.4
0.6
1.3
0.4
VCC=5V
VS=48V
OUTA1
OUTA2
OUTB1
OUTB2
1.7
1.2
Io=1.3A
(Lot-No.U2009T,DIP16)
1.8
VCC=5V
VS=48V
OUTA1
OUTA2
OUTB1
OUTB2
1.4
Vsat(D ) [V ]
Io=1.3A
(Lot-No.U2009T,DIP16)
1.6
NJM2670
Vsat(U) vs. Temperature
1.2
-50
-25
0
25
50
75
100
125
150
-50
-25
0
Temperature [degC]
NJM2670
Diode(D) vs. Temperature
50
75
100
125
150
NJM2670
Diode(U) vs. Temperature
(Lot-No.U2009T,DIP16)
1.6
25
Temperature [degC]
(Lot-No.U2009T,DIP16)
1.6
VCC=5V
VS=48V
VCC=5V
VS=48V
1.5
1.5
Diode(U) [V ]
Diode(D) [V ]
I=1.3A
1.4
I=1.0A
1.3
1.4
1.3
1.2
1.2
1.1
1.1
1
I=1.3A
I=1.0A
1
-50
-25
0
25
50
75
100
125
150
Temperature [degC]
-50
-25
0
25
50
75
100
125
Temperature [degC]
NJM2670
Diode(U) vs. Temperature
(Lot-No.U2009T,DIP16)
1.2
VCC=5V
VS=48V
1.15
Diode(U) [V ]
1.1
I=0.5A
1.05
1
0.95
0.9
0.85
0.8
-50
-25
0
25
50
75
Temperature [degC]
-8-
100
125
150
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
150