STMICROELECTRONICS VND05BSP

VND05BSP
®
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE
V DSS
R DS(on )
I OUT
V CC
VND05BSP
40 V
0.2 Ω
1.6 A
26 V
■
■
■
■
■
■
■
OUTPUT CURRENT (CONTINUOUS):
9A @ Tc = 85oC PER CHANNEL
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE PROTECTION
OPEN DRAIN DIAGNOSTIC OUTPUT
INDUCTIVE LOAD FAST
DEMAGNETIZATION
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VND05BSP is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded. This device has two
channels, and a common diagnostic. Built-in
thermal shut-down protects the chip from over
temperature and short circuit.
The status output provides an indication of open
load in on
state, open load in off state,
overtemperature conditions and stuck-on to VCC.
10
1
PowerSO-10
BLOCK DIAGRAM
April 2001
1/9
VND05BSP
ABSOLUTE MAXIMUM RATING
Symbol
V (BR)DSS
I OUT
Parameter
Drain-Source Breakdown Voltage
Output Current (cont.) at T c = 85 o C
o
IOUT (RMS) RMS Output Current at T c = 85 C and f > 1Hz
o
IR
Reverse Output Current at T c = 85 C
I IN
Input Current
Unit
40
V
9
A
9
A
-9
A
±10
mA
-4
V
mA
-V CC
Reverse Supply Voltage
I STAT
Status Current
±10
V ESD
Electrostatic Discharge (1.5 kΩ, 100 pF)
2000
V
P tot
Power Dissipation at T c = 25 o C
59
W
Tj
Junction Operating Temperature
-40 to 150
o
C
-55 to 150
o
C
T stg
Storage Temperature
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
2/9
Value
VND05BSP
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient ($)
Max
Max
o
2.1
50
o
C/W
C/W
($) When mounted using minimum recommended pad size on FR-4 board
o
ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 C unless otherwise specified)
POWER
Symbol
V CC
Parameter
Test Conditions
Supply Voltage
In(*)
Nominal Current
T c = 85 C V DS(on) ≤ 0.5 V CC = 13 V
R on
On State Resistance
I OUT = I n V CC = 13 V
Supply Current
Off State
IS
V DS(MAX)
Ri
o
T j = 25 o C
Maximum Voltage Drop I OUT = 7.5 A
Output to GND internal
Impedance
T j = 25 o C
o
T j = 85 C
Min.
Typ.
Max.
Unit
6
13
26
V
1.6
2.6
A
0.13
0.2
Ω
100
µA
2.3
V
VCC = 13 V
V CC = 13 V
o
T j = 25 C
35
1.44
5
10
20
KΩ
Min.
Typ.
Max.
Unit
SWITCHING
Symbol
Parameter
td(on) (^)
Turn-on Delay Time Of
Output Current
R out = 5.4 Ω
5
25
200
µs
Rise Time Of Output
Current
R out = 5.4 Ω
10
50
180
µs
Turn-off Delay Time Of R out = 5.4 Ω
Output Current
10
75
250
µs
Fall Time Of Output
Current
R out = 5.4 Ω
10
35
180
µs
(di/dt) on
Turn-on Current Slope
R out = 5.4 Ω
0.003
0.1
A/µs
(di/dt)off
Turn-off Current Slope
R out = 5.4 Ω
0.005
0.1
A/µs
Max.
Unit
1.5
V
(•)
V
0.9
1.5
V
30
100
µA
6
-0.7
7
V
V
t r (^)
td(off) (^)
t f (^)
Test Conditions
LOGIC INPUT
Symbol
Parameter
Test Conditions
Min.
VIL
Input Low Level
Voltage
V IH
Input High Level
Voltage
3.5
VI(hyst.)
Input Hysteresis
Voltage
0.2
I IN
V ICL
T j = 25 o C
Input Current
V IN = 5 V
Input Clamp Voltage
I IN = 10 mA
I IN = -10 mA
5
Typ.
3/9
VND05BSP
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS
Symbol
Parameter
Test Conditions
VSTAT
Status Voltage Output
Low
V USD
Under Voltage Shut
Down
V SCL
Status Clamp Voltage
T TSD
Thermal Shut-down
Temperature
T SD(hyst .)
Thermal Shut-down
Hysteresis
TR
Reset Temperature
V OL
Open Voltage Level
Off-State (note 2)
I OL
Open Load Current
Level
On-State
t povl
Status Delay
(note 3)
t pol
Status Delay
(note 3)
Min.
Typ.
I STAT = 1.6 mA
I STAT = 10 mA
I STAT = -10 mA
Max.
Unit
0.4
V
3.5
4.5
6
V
5
6
-0.7
7
V
V
140
160
180
o
C
50
o
C
o
C
125
2.5
4
5
V
180
mA
5
10
µs
500
2500
µs
5
50
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
NOTE = (^) See switching time waveform
NOTE = (•) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
NOTE = note 1: The Nominal Current is the current at Tc = 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V
NOTE = note 2: IOL(off) = (VCC -VOL)/ROL
note 3:tpovl tpol: ISO definition.
Note 2 Relevant Figure
4/9
Note 3 Relevant Figure
VND05BSP
Switching Time Waveforms
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open load in on-state, open load in
off-state, over temperature conditions and
stuck-on to VCC.
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140 oC. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor being located inside the Power
MOS area. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (Vdemag) of -18V. This
function allows to greatly reduces the power
dissipation according to the formula:
Pdem = 0.5 • Lload •(Ιload)2 • [(VCC+Vdemag)/Vdemag]
•f
where f = switching frequency and
Vdemag = demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed VCC, Vdemag and f
according to the above formula. In this device if
the GND pin is disconnected, with VCC not
exceeding 16V, it will switch off.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across this
diode are as follows:
If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltage shutdown level is increa- sed
by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 3), which becomes
the common signal GND for the whole control
board avoiding shift of Vih, Vil and Vstat. This
solution allows the use of a standard diode.
5/9
VND05BSP
TRUTH TABLE
INPUT 1
INPUT 2
Normal Operation
L
H
L
H
L
H
H
L
L
H
L
H
L
H
H
L
H
H
H
H
Under-voltage
X
X
L
L
H
Channel 1
Channel 2
Channel 1
H
X
L
X
L
X
H
X
L
L
H
L
X
L
H
L
X
L
L
L(**)
Channel 2
X
L
H
L
X
L
H
L
L
L(**)
Channel 1
H
L
X
L
H
H
X
L
L
L
Channel 2
X
L
H
L
X
L
H
H
L
L
Thermal Shutdown
Open Load
Output Shorted to V CC
(**) with additional external resistor.
Figure 1: Waveforms
6/9
OUTPUT 1 OUTPUT 2
DIAGNOSTIC
VND05BSP
Figure 2: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 3: Typical Application Circuit With Separate Signal Ground
7/9
VND05BSP
PowerSO-10™ MECHANICAL DATA
mm.
DIM.
MIN.
A
A (*)
A1
B
B (*)
C
C (*)
D
D1
E
E2
E2 (*)
E4
E4 (*)
e
F
F (*)
H
H (*)
h
L
L (*)
α
α (*)
inch
TYP
3.35
3.4
0.00
0.40
0.37
0.35
0.23
9.40
7.40
9.30
7.20
7.30
5.90
5.90
MAX.
MIN.
3.65
3.6
0.10
0.60
0.53
0.55
0.32
9.60
7.60
9.50
7.60
7.50
6.10
6.30
0.132
0.134
0.000
0.016
0.014
0.013
0.009
0.370
0.291
0.366
0.283
0.287
0.232
0.232
1.35
1.40
14.40
14.35
0.049
0.047
0.543
0.545
1.80
1.10
8º
8º
0.047
0.031
0º
2º
1.27
TYP.
0.144
0.142
0.004
0.024
0.021
0.022
0.0126
0.378
0.300
0.374
300
0.295
0.240
0.248
0.050
1.25
1.20
13.80
13.85
0.50
0.053
0.055
0.567
0.565
0.002
1.20
0.80
0º
2º
0.070
0.043
8º
8º
(*) Muar only POA P013P
B
0.10 A B
10
H
E
E
E2
1
B
DETAIL "A"
A
C
0.25
h
E4
SEATING
PLANE
e
D
= D1=
=
=
SEATING
PLANE
A
F
A1
A1
L
DETAIL "A"
α
P095A
8/9
MAX.
VND05BSP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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