FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description Max rDS(on) = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Typ Qg = 12.7nC at VGS = 10V Low Miller charge Low Qrr Body Diode Application Optimized efficiency at high frequencies UIS Capability ( Single Pulse and Repetitive Pulse) DC/DC converters and Off-Line UPS RoHS Compliant Distributed Power Architectures Bottom Top 8 1 7 6 D D D D 5 D 5 4 G D 6 3 S D 7 2 S D 8 1 S G S S S 2 3 4 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Silicon limited) TC= 25°C -Continuous TA = 25°C ID TJ, TSTG ±20 V (Note 1b) 1.0 A 13.8 Single Pulse Avalanche Energy PD Units V 7.0 -Pulsed EAS Ratings 220 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 11 42 (Note 1a) Operating and Storage Junction Temperature Range 2.1 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 3.0 (Note 1a) 60 °C/W Package Marking and Ordering Information Device Marking FDMC2674 Device FDMC2674 ©2012 Fairchild Semiconductor Corporation FDMC2674 Rev.F3 Package MLP 3.3X3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET November 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 220 V ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 176V, VGS = 0V 1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 4 V 248 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C rDS(on) Static Drain to Source On Resistance 2 3.4 -10.2 mV/°C VGS = 10V, ID = 1.0A 305 366 VGS = 10V, ID = 1.0A , TJ = 150°C 678 814 880 1180 70 95 pF 11 20 pF mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 100V, VGS = 0V, f = 1MHz pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 100V, ID = 1.0A VGS = 10V, RGEN = 2.4Ω VGS = 0V to 10V VDD = 15V ID = 1.0A 9 18 ns 13 23 ns 15 27 ns 21 34 ns 12.7 18 nC 3.8 nC 2.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.2A (Note 2) IF = 1.0A, di/dt = 100A/μs 0.8 1.5 V 60 ns 109 nC Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB. (b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper. a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper b. 135°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3: Starting TJ = 25°C; N-ch: L = 1mH, IAS = 4.7A, VDD = 25V, VGS = 10V. FDMC2674 Rev.F3 2 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 2.5 VGS = 10V 2.0 VGS = 5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 3.0 VGS = 7V 1.5 VGS = 4.5V 1.0 0.5 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0.0 0.0 0.5 1.0 1.5 1.6 VGS = 4.5V 1.4 VGS = 5.0V 1.2 VGS = 7V 1.0 VGS = 10V 0.8 0.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.5 3.0 0.8 2.4 ID = 1A VGS = 10V 2.0 1.6 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) TJ = 150oC TJ = 25oC TJ = -55oC 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 5. Transfer Characteristics FDMC2674 Rev.F3 0.4 0.3 TJ = 25oC 8 12 16 VGS, GATE TO SOURCE VOLTAGE (V) 20 Figure 4. On-Resistance vs Gate to Source Voltage VDD = 5V 1 TJ = 150oC 0.5 4 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 2 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0.6 150 4 3 ID = 1A 0.7 0.2 Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 1.0 1.5 2.0 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage RDS(on), DRAIN TO SOURCE ON-RESISTANCE (Ω) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On-Region Characteristics PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 20 10 VGS = 0V 1 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 1E-4 0.0 0.3 0.6 0.9 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 1A 1000 CAPACITANCE (pF) 8 VDD = 100V 6 4 2 Ciss 100 Coss f = 1MHz VGS = 0V 10 0 3 6 9 Qg, GATE CHARGE(nC) 12 15 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 2 30 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) Crss 5 0.1 0 1 TJ = 25oC TJ = 125oC rDS(on) LIMITED 10 100us 1 1ms 10ms 0.1 100ms SINGLE PULSE TJ = MAX RATED 1s 10s RθJA = 135oC/W 0.01 TA = 25oC 0.1 0.01 0.1 1 10 1E-3 0.1 100 tAV, TIME IN AVALANCHE(ms) DC 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 500 TA = 25oC 100 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 I = I25 150 – T A -----------------------125 SINGLE PULSE o 1 0.5 -4 10 RθJA = 135 C/W -3 10 -2 10 -1 10 t, PULSE WIDTH (s) 0 10 1 10 2 10 3 10 Figure 11. Single Pulse Maximum Power Dissipation FDMC2674 Rev.F3 4 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 1E-3 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDMC2674 Rev.F3 5 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC2674 N-Channel UltraFET Trench MOSFET Dimensional Outline and Pad Layout FDMC2674 Rev.F3 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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