MMDT4413 COMPLEMENTARY NPN/PNP SMALL SIGNAL SURGACE MOUNT TRANSISTOR VOLTAGE 40 Volts 225 mWatts POWER FEATURES • Complementary Pair • One 4401-Type NPN • One 4403-Type PNP • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Ultra-Small Surface Mount Package • Also Available in Lead Free Version • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.006 gram • Marking: M6A 6 5 4 1 2 3 Fig.55 MAXIMUM RATINGS,TOTAL DEVICE@TA=25oC UNLESS OTHERWISE SPECIFIED Characteristic Power Dissipation Thermal Resistance , Junction to Ambient Operating and Storage and Junction Range STAD-MAR.27.2007 Symbol Value Unit Pd 225 mW RθJA 625 K/W TJ,TSTG -55 to 150 O C PAGE . 1 MMDT4413 MAXIMUM RATINGS,NPN 4401 SECTION@TA=25oC UNLESS OTHERWISE SPECIFIED Characteristic Symbol NPN4401 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Volage VEBO 6.0 V Ic 600 mA Collector Current-Continuous MAXIMUM RATINGS,NPN 4403 SECTION@TA=25oC UNLESS OTHERWISE SPECIFIED Characteristic Symbol PNP4403 Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Volage VEBO -5.0 V Ic -600 mA Collector Current-Continuous STAD-MAR.27.2007 PAGE . 2 MMDT4413 ELECTRICAL CHARACTERISTICS,NPN 4401 SECTION@TA=25oC UNLESS OTHERWISE SPECIFIED C H A R A C T E R IS T IC S YM B O L T E S T C O N D IT IO N M IN MA X U N IT O F F C H A R A C T E R IS T IC C o lle c to r - B a s e B re a k d o wn Vo lta g e V ( B R) C B O IC = 1 0 0 µ A , IE = 0 60 - V C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V ( B R) C E O IC = 1 . 0 m A , IB = 0 40 - V E mi tte r - B a s e B re a k d o wn Vo lta g e V ( B R) E B O IE = 1 0 0 µ A , IC = 0 6 .0 - V C o l l e c t o r C ut o f f C ur r e nt B a s e C ut o f f C ur r e nt IC E X V C E =3 5 V, V E B (OF F )=0 .4 V - 100 nA IB L V C E =3 5 V, V E B (OF F )=0 .4 V - 100 nA hFE IC = 1 0 0 µ A , V C E = 1 . 0 V IC = 1 . 0 m A , V C E = 1 . 0 V IC = 1 0 m A , V C E = 1 . 0 V IC = 1 5 0 m A , V C E = 1 . 0 V IC = 5 0 0 m A , V C E = 2 . 0 V 20 40 80 100 40 300 - - O N C H A R A C T E R IS T IC S D C C ur r e nt G a i n ( N o t e 2 ) C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e V C E ( S AT) IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A - 0 .4 0 0 .7 5 V B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e V B E ( S AT) IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A 0 .7 5 - 0 .9 5 1 .2 0 V S M A L L S IG N A L C H A R A C T E R IS T IC S O ut p ut C a p a c i t a nc e Ccb V C B = 5 V , IE = 0 , f = 1 . 0 M H z - 6 .5 pF In p u t C a p a c i t a n c e Ceb V E B = 0 . 5 V , IC = 0 , f = 1 M H z - 30 pF In p u t Im p e d a n c e hi e 1 .0 15 kΩ Vo lta g e F e e d b a c k Ra ti o hr e 0 .1 8 .0 X 1 0 -4 S m a l l S i g na l C ur r e nt G a i n hf e 40 500 - O ut p ut A d m i t t a nc e ho e 1 .0 30 µS 250 - MHz - 15 ns - 20 ns - 225 ns - 30 ns V C E = 1 0 V , IC = 1 . 0 m A , f = 1 . 0 K H z C ur r e nt G a i n - B a nd w i d t h P r o d uc t fT V C E = 1 0 V , IC = 2 0 m A , f = 1 0 0 M H z S W IT C H IN G C H A R A C T E R IS T IC S D e l a y Ti m e td V C C =3 0 V,V B E (OF F )=2 .0 V, IC = 1 5 0 m A , IB 1 = 1 5 m A R i s e Ti m e tr S t o r a g e Ti m e ts V C C = 3 0 V , IC = 1 5 0 m A IB 1 = IB 2 = 1 5 m A F a l l Ti m e STAD-MAR.27.2007 tf PAGE . 3 MMDT4413 ELECTRICAL CHARACTERISTICS,NPN 4403 SECTION@TA=25oC UNLESS OTHERWISE SPECIFIED C H A R A C T E R IS T IC S YM B O L T E S T C O N D IT IO N M IN MA X U N IT O F F C H A R A C T E R IS T IC C o lle c to r - B a s e B re a k d o wn Vo lta g e V ( B R) C B O IC = - 1 0 0 µ A , IE = 0 -40 - V C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V ( B R) C E O IC = - 1 . 0 m A , IB = 0 -40 - V E mi tte r - B a s e B re a k d o wn Vo lta g e V ( B R) E B O IE = - 1 0 0 µ A , IC = 0 -5 .0 - V C o l l e c t o r C ut o f f C ur r e nt B a s e C ut o f f C ur r e nt IC E X V C E =-3 5 V, V E B (OF F )=-0 .4 V - -100 nA IB L V C E =-3 5 V, V E B (OF F )=-0 .4 V - -100 nA hFE IC = - 1 0 0 µ A , V C E = - 1 . 0 V IC = - 1 . 0 m A , V C E = - 1 . 0 V IC = - 1 0 m A , V C E = - 1 . 0 V IC = - 1 5 0 m A , V C E = - 2 . 0 V IC = - 5 0 0 m A , V C E = - 2 . 0 V 30 60 100 100 20 300 - - O N C H A R A C T E R IS T IC S D C C ur r e nt G a i n ( N o t e 2 ) C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e V C E ( S AT) IC = - 1 5 0 m A , IB = - 1 5 m A IC = - 5 0 0 m A , IB = - 5 0 m A - -0 .4 0 -0 .7 5 V B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e V B E ( S AT) IC = - 1 5 0 m A , IB = - 1 5 m A IC = - 5 0 0 m A , IB = - 5 0 m A -0 .7 5 - -0 .9 5 -1 .3 0 V S M A L L S IG N A L C H A R A C T E R IS T IC S O ut p ut C a p a c i t a nc e Ccb V C B = - 1 0 V , IE = 0 , f = 1 . 0 M H z - 8 .5 pF In p u t C a p a c i t a n c e Ceb V E B = - 0 . 5 V , IC = 0 , f = 1 M H z - 30 pF In p u t Im p e d a n c e hi e 1 .5 15 kΩ Vo lta g e F e e d b a c k Ra ti o hr e 0 .1 8 .0 X 1 0 -4 S m a l l S i g na l C ur r e nt G a i n hf e 60 500 - O ut p ut A d m i t t a nc e ho e 1 .0 100 µS 200 - MHz - 15 ns - 20 ns - 225 ns - 30 ns V C E = - 1 0 V , IC = - 1 . 0 m A , f = 1 . 0 K H z C ur r e nt G a i n - B a nd w i d t h P r o d uc t fT V C E = - 1 0 V , IC = - 2 0 m A , f = 1 0 0 M H z S W IT C H IN G C H A R A C T E R IS T IC S D e l a y Ti m e td V C C =-3 0 V,V B E (OF F )=-2 .0 V, IC = - 1 5 0 m A , IB 1 = - 1 5 m A R i s e Ti m e tr S t o r a g e Ti m e ts V C C = - 3 0 V , IC = - 1 5 0 m A IB 1 = IB 2 = - 1 5 m A F a l l Ti m e STAD-MAR.27.2007 tf PAGE . 4 MMDT4413 2.0 CAPACITANCE (pF) 20 VCE COLLECTOR-EMITTER VOLTAGE (V) 30 Cibo 10 5.0 Cobo 1.0 1.0 0.1 IC = 1mA IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 50 10 IC = 30mA 1.8 0 0.001 REVERSE VOLTS (V) Fig. 1 Typical Capacitance (4401) 0.01 0.1 100 10 1 IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region (4401) 1000 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 0.5 TA = 125°C 100 TA = -25°C TA = +25°C 10 VCE = 1.0V 1 IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = -50°C 0 1 1 0.1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs Collector Current (4401) STAD-MAR.27.2007 1000 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current (4401) PAGE . 5 MMDT4413 1000 VCE = 5V 0.9 fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 10 1 100 VCE = 5V 100 10 1 1 IC, COLLECTOR CURRENT (mA) Fig. 5 Base Emitter Voltage vs. Collector Current (4401) 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current (4401) 30 20 CAPACITANCE (pF) Cibo 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 REVERSE VOLTS (V) Fig. 7 Typical Capacitance (4403) STAD-MAR.27.2007 PAGE . 6 VCE COLLECTOR-EMITTER VOLTAGE (V) MMDT4413 1.6 1.4 1.2 IC = 10mA IC = 100mA I = 300mA C IC = 30mA IC = 1mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 1 0.1 10 100 IB BASE CURRENT (mA) Fig. 8 Typical Collector Saturation Region (4403) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = 50°C VBE(ON), BASE EMITTER VOLTAGE (V) 1000 0.5 VCE = 5V 0.9 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Collector Emitter Saturation Voltage vs. Collector Current (4403) STAD-MAR.27.2007 1000 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 10 Base-Emitter Voltage vs. Collector Current (4403) PAGE . 7 MMDT4413 1000 VCE = 5V TA = 150°C fT, GAIN BANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25°C 100 TA = -50°C 10 VCE = 5V 100 10 1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 11 DC Current Gain vs. Collector Current (4403) 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 12 Gain Bandwidth Product vs. Collector Current (4403) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 13, Max Power Dissipation vs Ambient Temperature (4403) STAD-MAR.27.2007 PAGE . 8 MMDT4413 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.01.2006 PAGE . 9