TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Anode 6. Cathode 2. NC 5. Gate 3. Drain 4. Source -20 ID (A) 94 @ VGS = -4.5V -2.8 131 @ VGS = -2.5V -2.3 185 @ VGS = -1.8V -0.54 SCHOTTKY PRODUCT SUMMARY VR (V) VF (V) IF (A) 20 0.5 2 Block Diagram Features ● Configuration with MOSFET and Low Vf SKY ● Package low profile 0.75mm (Typ) ● Independent Pin Out for Design Flexibility Application ● Load Switch for Portable Applications ● DC-DC Buck Circuit ● Li-ion Battery Applications ● Cellular Charger Switch Ordering Information Part No. Package TSM301K12CQ RLG TDFN 2x2 Note: “G” denotes for Halogen Free P-Channel MOSFET with Schottky Diode Packing 3Kpcs / 7” Reel MOSFET Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ID -4.5 A IDM -8 A 6.5 W Continuous Drain Current (Note 1,2) Pulsed Drain Current o Maximum Power Dissipation TC=25 C o TA=25 C (Note 2) Operating Junction Temperature PD TJ Operating Junction and Storage Temperature Range TJ, TSTG 1.56 W +150 o - 55 to +150 o C C Schottky Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Reverse Voltage VR 20 V Average Forward Current (Note 1,2) IF 2 A IFM 5 A 6.8 W 1.47 W Pulsed Forward Current o Maximum Power Dissipation (Note 1) TC=25 C o TA=25 C (Note 2) 1/7 PD Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode Thermal Resistance Ratings Parameter Symbol Limit Unit T≤ 5s Steady State 80 120 o RӨJA T ≤ 5s Steady State 85 130 o RӨJA MOSFET Thermal Resistance-Junction to Ambient C/W C/W o Schottky Thermal Resistance-Junction to Ambient C/W C/W o Notes: 1. Surface mounted on 1” x 1” (2 oz) FAR4 board, 2. t ≤ 5s MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA BVDSS -20 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -0.5 -- -- V Gate Body Leakage VGS = ±12V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS =-20V, VGS = 0V IDSS -- -- -1 µA -- -- 94 -- -- 131 -- -- 185 VSD -- -- -1.2 Qg -- 5.2 10 Qgs -- 1.36 -- Qgd -- 0.6 -- Ciss -- 5.2 -- Coss -- 9.7 -- Crss -- 19 -- td(on) -- 29 -- tr -- 295 -- td(off) -- 170 -- tf -- 65 -- Symbol Min Typ Max Unit VF -- -- 0.5 V -- 0.015 0.08 -- 0.02 0.10 -- 60 -- VGS = -4.5V, ID = -2.8A a Drain-Source On-State Resistance VGS = -2.5V, ID = -2.3A RDS(ON) VGS = -1.8V, ID = -0.54A Diode Forward Voltage IS = -1.6A, VGS = 0V mΩ V b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = -6V, ID = -2.8A, VGS = -5V VGS=0V, VDS=-6V, f =1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VDS=-15V, RD=15Ω, Turn-Off Delay Time RG=6Ω, VGS=-10V Turn-Off Fall Time nS Schottky Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Forward Voltage Drop IF = 1A Maximum Reverse Leakage VR = 5V Current VR = 20V IRm Junction Capacitance VR = 10V CT Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/7 mA pF Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/7 Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/7 Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode SCHOTTKY Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Typical Forward Current Derating Curve Typical Instantaneous Forward Characteristics Typical Reverse Characteristics Typical Junction Capacitance Maximum Repetitive Forward Surge Current 5/7 Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 Mechanical Drawing DIM A B C D E F G H J K MILLIMETERS MIN MAX 1.95 2.05 1.95 2.05 0.50 0.60 0.30 0.40 0.20 0.30 0.65 BSC 0.75 0.85 0.70 0.80 -0.05 0.195 0.211 INCHES MIN MAX 0.0768 0.0807 0.0768 0.0807 0.0197 0.0236 0.0118 0.0157 0.0079 0.0118 0.0256 BSC 0.0295 0.0335 0.0276 0.0315 0.0020 0.0077 0.0083 Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6/7 Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode Notice Specifications of the products displayed herein are subject to change without notice. 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