TSM5N50 500V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.8 @ VGS =10V 2.2 General Description The TSM5N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Block Diagram Features ● ● ● ● ● Low gate charge typical @ 13nC Low Crss typical @ 8.5pF Fast Switching 100% avalanche tested Improved dv/dt capability Ordering Information Part No. Package Packing TO-220 50pcs / Tube TSM5N50CZ C0 N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS VGS 500 ±30 V V Continuous Drain Current Pulsed Drain Current ID IDM 4.5 18 A A Continuous Source Current (Diode Conduction) Peak Diode Recovery (Note 2) IS dv/dt 4.5 4.5 A V/ns Single Pulse Drain to Source Avalanche Energy (Note 3) EAS 300 mJ PD 85 o Maximum Power Dissipation @Ta = 25 C Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 Symbol Limit RӨJC RӨJA 1.47 62.5 W o C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec 1/6 Unit o C/W C/W o Version: A07 TSM5N50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS Drain-Source On-State Resistance VGS = 10V, ID = 2.2A RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS Gate Body Leakage VGS = ±30V, VDS = 0V IGSS Forward Transconductance VDS = 50V, ID = 2.2A gfs Diode Forward Voltage IS = 4.5A, VGS = 0V VSD b Dynamic Total Gate Charge Qg VDS = 250V, ID = 4.5A, Gate-Source Charge Qgs VGS = 10V Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 25V, VGS = 0V, Output Capacitance Coss f = 1.0MHz Reverse Transfer Capacitance Crss c Switching Turn-On Delay Time td(on) Turn-On Rise Time VGS = 10V, ID = 4.5A, tr VDD = 250V, RG = 25Ω Turn-Off Delay Time td(off) Turn-Off Fall Time tf Reverse Recovery Time VGS = 0V, IS = 4.5A, tfr dIF/dt = 100A/us Reverse Recovery Charge Qfr Notes: 1. Pulse test: pulse width ≤300uS, duty cycle ≤2% 2. ISD<4.5A, di/dt<200A/us, VDD<BVDSS 3. VDD = 50V, VGS=10V, IAS=4.5A, L=27mH, RG=25Ω 4. For design reference only, not subject to production testing. 5. Switching time is essentially independent of operating temperature. 2/6 Min Typ Max Unit 500 -3.0 ----- -1.36 ---4 -- -1.8 5.0 1 ±100 -1.4 V Ω V uA nA S V ------- 13 3.4 6.4 470 75 8.5 17 --610 95 11 ------- 13 55 25 35 215 1.26 35 120 60 80 --- nC pF nS uC Version: A07 TSM5N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: A07 TSM5N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: A07 TSM5N50 500V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: A07 TSM5N50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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