UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 11.4A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.52Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 27 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 20 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 11N40L-TA3-T 11N40G-TA3-T TO-220 11N40L-TF3-T 11N40G-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube 1 of 6 QW-R502-219.D 11N40 Power MOSFET ABSOLUTE MAXIMUM RATING (TC =25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25℃) ID 11.4 A Pulsed Drain Current (Note 2) IDM 46 A Avalanche Current (Note 2) IAR 11.4 A Single Pulsed(Note 3) EAS 520 mJ Avalanche Energy 14.7 Repetitive(Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation 147 W PD Derate above 25℃ 1.18 W/℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=7mH, IAS=11.4A, VDD=50V, RG=25Ω, Satarting TJ=25°C. 4. ISD ≤ 11.4A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Satarting TJ=25°C. THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 0.85 UNIT ℃/W ℃/W 2 of 6 QW-R502-219.D 11N40 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS BVDSS VGS =0 V, ID =250 µA VDS =400V, VGS =0 V Zero Gate Voltage Drain Current IDSS VDS =320V, TC =125°C Gate-Body Leakage Current IGSS VDS =0 V, VGS = ±30 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID =250 µA, Referenced to25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA Static Drain-Source On-Resistance RDS(ON) VGS = 10 V, ID = 5.7 A DYNAMIC PARAMETERS Input Capacitance CISS VDS =25V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=200V, ID=11.4A, Turn-ON Rise Time tR RGEN =25Ω(Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS =320V, VGS =10V, Gate Source Charge QGS ID =11.4A (Note 1, 2) Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=11.4 A,VGS=0V Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, dIF /dt = 100 A/ s, IS =11.4A (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 2. Independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 400 V 1 10 ±100 0.42 2.0 µA nA mV/℃ 4.0 0.42 0.52 V Ω 1100 1400 180 240 20 30 pF 30 100 60 60 27 7.3 12.3 70 210 130 130 35 ns nC 1.5 V 11.4 A 46 240 1.8 ns µC 3 of 6 QW-R502-219.D 11N40 Power MOSFET TEST CIRCUIT Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-219.D 11N40 Power MOSFET TEST CIRCUIT(Cont.) + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Forward Voltage Drop 5 of 6 QW-R502-219.D 11N40 Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-219.D