UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 1 TO-126 DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications TO-126C 1 FEATURES 1 TO-220 TO-220F * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 750V 1 1 TO-251 TO-252 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC5353BL-T60-K 2SC5353BG-T60-K 2SC5353BL-T6C-K 2SC5353BG-T6C-K 2SC5353BL-TA3-T 2SC5353BG-TA3-T 2SC5353BL-TF3-T 2SC5353BG-TF3-T 2SC5353BL-TM3-T 2SC5353BG-TM3-T 2SC5353BL-TN3-R 2SC5353BG-TN3-R www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-126 TO-126C TO-220 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 B C E B C E B C E B C E B C E B C E Packing Bulk Bulk Tube Tube Tube Tape Reel 1 of 4 QW-R203-035.C 2SC5353B NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT 900 V 750 V 7 V DC 3 A Collector Current 5 A Pulse Base Current 1 A TO-220F/TO-126/TO-126C 20 W Power Dissipation P TO-220 25 W D TO-251/TO-252 22 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage TEST CONDITIONS IC=1 mA, IE = 0 IC=10 mA, IB = 0 VCB=720V, IE= 0 VEB=7V, IC= 0 VCE=5 V, IC=1 mA VCE=5 V, IC=0.15 A IC=1.2 A, IB=0.24 A IC=1.2 A, IB=0.24 A tR MIN 900 750 TYP MAX UNIT V V 100 µA 10 µA 10 15 1.0 1.3 V V 0.7 µS 4.0 µS 0.5 µS IB1 Rise Time SYMBOL BVCBO BVCEO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) 300Ω PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Switching Time Storage Time Fall Time tSTG tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IB2 SYMBOL VCBO VCEO VEBO IC ICP IB 2 of 4 QW-R203-035.C 2SC5353B NPN SILICON TRANSISTOR Collector Current, IC (A) Collector Current, IC (A) TYPICAL CHARACTERISTICS Collector-Emitter Saturation Voltage vs. Collector Current DC Current Gain vs. Collector Current 10 Collector-Emitter Saturation Voltage, VCE (SAT) (V) DC Current Gain, hFE 1000 100 TC=100℃ 25 10 -20 Common emitter VCE = 5 V 1 0.001 0.01 0.1 1 Collector Current, IC (A) 1 0.1 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Common emitter IC/IB = 3 0.05 0.01 TC=100℃ 25 -20 0.1 1 Collector Current, IC (A) 10 3 of 4 QW-R203-035.C 2SC5353B NPN SILICON TRANSISTOR Collector Current, IC (A) Collector Power Dissipation, PD (W) TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-035.C