UNISONIC TECHNOLOGIES CO., LTD UF634 Preliminary Power MOSFET ADVANCED POWER MOSFET DESCRIPTION The UTC UF634 is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS(ON), improved gate charge and so on. FEATURES * Lower Input Capacitance * Improved Gate Charge * Lower Leakage Current: 10μA (MAX.) @ VDS = 250V * Avalanche Rugged Technology * Rugged Gate Oxide Technology * Extended Safe Operating Area SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF634L-TA3-T UF634G-TA3-T UF634L-TF1-T UF634G-TF1-T Note: G: Gain, D:Drain, S:Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube 1 of 6 QW-R502-454.b UF634 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Gate-to-Source Voltage Drain-to-Source Voltage RATINGS UNIT ± 30 V 250 V TC=25°C 8.1 ID Continuous Drain Current A TC=100°C 5.1 Drain Current-Pulsed (Note 2) IDM 32 A Avalanche Current (Note 2) IAR 8.1 A Single Pulsed Avalanche Energy (Note 3) EAS 205 mJ Repetitive Avalanche Energy (Note 2) EAR 7.4 mJ TO-220 74 W Power Dissipation PD TO-220F1 38 W Operating Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 3. L=5mH, IAS=8.1A, VDD=50V, RG=27 Ω, Starting TJ =25°C 4. ISD ≤8.1A, di/dt ≤210A/µs, VDD≤BVDSS, Starting TJ =25°C SYMBOL VGS VDSS THERMAL RESISTANCE PARAMETER Junction to Ambient TO-220/ TO-220F1 TO-220 Junction to Case TO-220F1 SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 1.69 3.29 UNIT °C/W °C/W °C/W 2 of 6 QW-R502-454.b UF634 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current SYMBOL BVDSS TEST CONDITIONS ID=250µA, VGS=0V 250 △BV/△TJ ID=250µA IDSS V 0.29 VDS=250V VDS=200V, TJ=125°C VGS=±30V Gate- Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=5V, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=-4.05A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=200V, ID=8.1A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=125V, ID=8.1A, RG=12Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=8.1A, VGS=0V, TJ=25°C (Note 2) Integral reverse pn-diode Maximum Body-Diode Continuous Current IS in the MOSFET Pulsed-Source Current (Note 1) ISM Reverse Recovery Time (Note 2) tRR diF/dt=100A/µs, TJ=25°C, IF=8.1A Reverse Recovery Charge (Note 2) QRR Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤2% 3. Essentially Independent of Operating Temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V/°C 10 µA 100 ±100 nA 2.0 4.0 0.45 V Ω 950 130 60 pF pF pF 30 40 5.8 13.5 13 40 14 40 53 120 21 50 nC nC nC ns ns ns ns 730 110 50 190 1.28 1.5 V 8.1 32 A A ns µC 3 of 6 QW-R502-454.b UF634 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-454.b UF634 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-454.b UF634 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-454.b