FDME1034CZT Complementary PowerTrench® MOSFET N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ Features General Description This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. Q1: N-Channel Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A Q2: P-Channel Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications. Applications Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin DC-DC Conversion Free from halogenated compounds and antimony oxides Level Shifted Load Switch HBM ESD protection level > 1600 V (Note 3) RoHS Compliant D2 G1 S1 D2 Pin 1 D1 S2 G2 D1 TOP BOTTOM MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous Q1 20 TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Units V V ±8 ±8 3.8 -2.6 6 -6 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4 Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.6 Operating and Storage Junction Temperature Range Q2 -20 -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90 RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195 °C/W Package Marking and Ordering Information Device Marking 5T Device FDME1034CZT ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 Package MicroFET 1.6x1.6 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDME1034CZT Complementary PowerTrench® MOSFET July 2010 Symbol Parameter Test Conditions Type Min 20 -20 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ID = -250 μA, VGS = 0 V Q1 Q2 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C ID = -250 μA, referenced to 25 °C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V Q1 Q2 1 -1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V All ±10 μA 1.0 -1.0 V V 16 -12 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA VGS = VDS, ID = -250 μA Q1 Q2 ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C Q1 Q2 Drain to Source On Resistance mV/°C 55 68 86 VGS = 1.8 V, ID = 2.5 A 85 113 Q1 66 106 160 VGS = 4.5 V, ID = 3.4 A, TJ =125°C 76 112 VGS = -4.5 V, ID = -2.3 A 95 142 VGS = -2.5 V, ID = -1.8 A 120 213 VGS = -1.8 V, ID = -1.5 A 150 331 190 530 128 190 Q2 VGS = -4.5 V, ID = -2.3 A , TJ = 125 °C Forward Transconductance -3 2 VGS = 4.5 V, ID = 3.4 A VGS = -1.5 V, ID = -1.2 A gFS 0.7 -0.6 VGS = 2.5 V, ID = 2.9 A VGS = 1.5 V, ID = 2.1 A rDS(on) 0.4 -0.4 VDS = 4.5 V, ID =3.4 A VDS = -4.5 V, ID = -2.3 A mΩ Q1 Q2 9 7 Q1 Q2 225 305 300 405 pF Q1 Q2 40 55 55 75 pF Q1 Q2 25 50 40 75 pF Q1 Q2 4.5 4.7 10 10 Q1 Q2 2.0 4.8 10 10 Q1 Q2 15 33 27 53 Q1 Q2 1.7 16 10 29 Q1 Q2 3 5.5 4.2 7.7 Q1 Q2 0.4 0.6 Q1 Q2 0.6 1.4 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Q1 VDS = 10 V, VGS = 0 V, f = 1 MHz Q2 VDS = -10 V, VGS = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 Q1 VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω Q2 VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω Q1 VDD = 10 V, ID = 3.4 A, VGS = 4.5 V Q2 VDD = -10 V, ID = -2.3 A, VGS = -4.5 V 2 ns nC www.fairchildsemi.com FDME1034CZT Complementary PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.7 -0.8 1.2 -1.2 V Q1 Q2 8.5 16 17 29 ns Q1 Q2 1.4 4.4 10 10 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Time VGS = 0 V, IS = 0.9 A VGS = 0 V, IS = -0.9 A (Note 2) (Note 2) Q1 IF = 3.4 A, di/dt = 100 A/μS Q2 IF = -2.3 A, di/dt = 100 A/μs Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 90 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 195 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 3 www.fairchildsemi.com FDME1034CZT Complementary PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted VGS = 4.5 V VGS = 3 V VGS = 2.5 V VGS = 1.8 V 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 6 VGS = 1.5 V 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 3.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.5 VGS = 1.5 V 2.0 VGS = 1.8 V 1.5 1.0 VGS = 4.5 V 0.5 1.5 0 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 300 ID = 3.4 A VGS = 4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 250 ID = 3.4 A 200 150 TJ = 125 oC 100 50 TJ = 25 oC 0 1.0 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 6 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V TJ = 150 oC 2 TJ = 25 oC TJ = -55 oC 1.0 1.5 3.0 3.5 4.0 4.5 VGS = 0 V 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 2.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 2.5 10 4 0.5 2.0 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 1.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 3 V VGS = 2.5 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDME1034CZT Complementary PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 500 ID = 3.4 A Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 VDD = 8 V 3.0 VDD = 10 V VDD = 12 V 1.5 100 Coss 0.0 0 1 2 1 0.1 3 1 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 -1 10 Ig, GATE LEAKAGE CURRENT (A) 100 μs ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 195 oC/W TA = 25 oC 0.01 0.1 1 10 -2 VGS = 0 V 10 -3 10 -4 10 TJ = 125 oC -5 10 -6 10 -7 10 -8 TJ = 25 oC 10 -9 50 10 VDS, DRAIN to SOURCE VOLTAGE (V) 0 3 6 9 12 15 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Gate Leakage Current vs Gate to Source Voltage P(PK), PEAK TRANSIENT POWER (W) 100 SINGLE PULSE o RθJA = 195 C/W o TA = 25 C 10 1 0.5 -4 10 -3 -2 10 10 -1 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 5 www.fairchildsemi.com FDME1034CZT Complementary PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.01 0.005 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 195 C/W -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 6 www.fairchildsemi.com FDME1034CZT Complementary PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 6 -ID, DRAIN CURRENT (A) VGS = -3 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3 VGS = -4.5 V VGS = -2.5 V 4 VGS = - 1.8 V 2 VGS = -1.5 V 0 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -1.5 V 2 1 0 0 2 4 6 -ID, DRAIN CURRENT (A) Figure 14. Normalized on-Resistance vs Drain Current and Gate Voltage 500 ID = -2.3 A VGS = -4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 1.6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 400 ID = -2.3 A 300 TJ = 125 oC 200 100 TJ = 25 oC 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. On-Resistance vs Gate to Source Voltage Figure 15. Normalized On-Resistance vs Junction Temperature 6 10 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) VGS = -3 V VGS = -2.5 V 2.0 Figure 13. On- Region Characteristics 0.6 -75 VGS = -1.8 V VDS = -5 V 4 TJ = 150 oC 2 TJ = 25 oC TJ = -55 oC 0 0.0 0.5 1.0 1.5 1 TJ = 150 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 17. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 VGS = 0 V Figure 18. Source to Drain Diode Forward Voltage vs Source Current 7 www.fairchildsemi.com FDME1034CZT Complementary PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted ID = -2.3 A Ciss VDD = -8 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 1000 4.5 3.0 VDD = -10 V 1.5 VDD = -12 V 100 Coss Crss f = 1 MHz VGS = 0 V 10 0.1 0.0 0 2 4 6 10 20 Figure 20. Capacitance vs Drain to Source Voltage Figure 19. Gate Charge Characteristics 10 -1 10 -Ig, GATE LEAKAGE CURRENT (A) 100 us -ID, DRAIN CURRENT (A) 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 195 oC/W TA = 25 oC 0.01 0.1 1 10 VDS = 0 V -2 10 -3 10 -4 10 TJ = 125 oC -5 10 -6 10 -7 10 TJ = 25 oC -8 10 -9 10 60 -VDS, DRAIN to SOURCE VOLTAGE (V) 0 3 6 9 12 15 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 21. Forward Bias Safe Operating Area Figure 22. Gate Leakage Current vs Gate to Source Voltage P(PK), PEAK TRANSIENT POWER (W) 1000 SINGLE PULSE o RθJA = 195 C/W 100 o TA = 25 C 10 1 0.3 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (s) Fig 23. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 8 www.fairchildsemi.com FDME1034CZT Complementary PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 195 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 24. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 9 www.fairchildsemi.com FDME1034CZT Complementary PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted FDME1034CZT Complementary PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 10 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 11 www.fairchildsemi.com FDME1034CZT Complementary PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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