MICROCHIP MCP73832

MCP73831/2
Miniature Single-Cell, Fully Integrated Li-Ion,
Li-Polymer Charge Management Controllers
Features
Description:
• Linear Charge Management Controller:
- Integrated Pass Transistor
- Integrated Current Sense
- Reverse Discharge Protection
• High Accuracy Preset Voltage Regulation: + 0.75%
• Four Voltage Regulation Options:
- 4.20V, 4.35V, 4.40V, 4.50V
• Programmable Charge Current: 15 mA to 500 mA
• Selectable Preconditioning:
- 10%, 20%, 40%, or Disable
• Selectable End-of-Charge Control:
- 5%, 7.5%, 10%, or 20%
• Charge Status Output
- Tri-State Output - MCP73831
- Open-Drain Output - MCP73832
• Automatic Power-Down
• Thermal Regulation
• Temperature Range: -40°C to +85°C
• Packaging:
- 8-Lead, 2 mm x 3 mm DFN
- 5-Lead, SOT-23
The MCP73831/2 devices are highly advanced linear
charge management controllers for use in space-limited, cost-sensitive applications. The MCP73831/2 are
available in an 8-Lead, 2 mm x 3 mm DFN package or
a 5-Lead, SOT-23 package. Along with their small
physical size, the low number of external components
required make the MCP73831/2 ideally suited for
portable applications. For applications charging from a
USB port, the MCP73831/2 adhere to all the
specifications governing the USB power bus.
Applications
•
•
•
•
•
•
•
Lithium-Ion/Lithium-Polymer Battery Chargers
Personal Data Assistants
Cellular Telephones
Digital Cameras
MP3 Players
Bluetooth Headsets
USB Chargers
Typical Application
4.7 μF
4 V
DD
1
STAT
+ Single
Li-Ion
- Cell
5
470Ω
VSS 2
The MCP73831/2 devices are fully specified over the
ambient temperature range of -40°C to +85°C.
Package Types
VDD 1
VBAT 3
4.7 μF
PROG
Several options are available for the preconditioning
threshold, preconditioning current value, charge
termination value and automatic recharge threshold.
The preconditioning value and charge termination
value are set as a ratio, or percentage, of the
programmed constant current value. Preconditioning
can be disabled. Refer to Section 1.0 “Electrical
Characteristics” for available options and the “Product Identification System” for standard options.
MCP73831/2
2×3 DFN*
500 mA Li-Ion Battery Charger
VIN
The MCP73831/2 employ a constant-current/constantvoltage charge algorithm with selectable preconditioning and charge termination. The constant voltage
regulation is fixed with four available options: 4.20V,
4.35V, 4.40V or 4.50V, to accommodate new, emerging
battery charging requirements. The constant current
value is set with one external resistor. The MCP73831/
2 devices limit the charge current based on die temperature during high power or high ambient conditions.
This thermal regulation optimizes the charge cycle time
while maintaining device reliability.
VDD 2
VBAT 3
VBAT 4
2 kΩ
8 PROG
EP
9
7 NC
6 VSS
MCP73831/2
SOT-23-5
STAT 1
VSS 2
VBAT 3
5 PROG
4 VDD
5 STAT
* Includes Exposed Thermal Pad (EP); see Table 3-1.
MCP73831
© 2008 Microchip Technology Inc.
DS21984E-page 1
MCP73831/2
Functional Block Diagram
VDD
6 mA
DIRECTION
CONTROL
VBAT
G=0.001
6 mA
PROG
0.5 mA
+
-
REFERENCE
GENERATOR
CA
MCP73831
ONLY
43.6 kΩ
VREF(1.22V)
361 kΩ
89 kΩ
VDD
3.9 kΩ
+
-
PRECONDITION
182.3 kΩ
111 kΩ
7 kΩ
+
TERMINATION
+
CHARGE
15 kΩ
STAT
+
-
VA
190 kΩ
111 kΩ
+
-
0.5 mA
VBAT
477 kΩ
VSS
255 kΩ
DS21984E-page 2
100 kΩ
SHDN
+
-
DIRECTION
CONTROL
+
-
UVLO
© 2008 Microchip Technology Inc.
MCP73831/2
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings†
VDD...................................................................................7.0V
All Inputs and Outputs w.r.t. VSS ............... -0.3 to (VDD+0.3)V
Maximum Junction Temperature, TJ ............ Internally Limited
Storage temperature .....................................-65°C to +150°C
ESD protection on all pins:
Human Body Model (1.5 kΩ in Series with 100 pF).......≥ 4 kV
Machine Model (200 pF, No Series Resistance) .............400V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40°C to +85°C.
Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Supply Voltage
VDD
3.75
—
6
V
Supply Current
ISS
—
510
1500
µA
Charging
—
53
200
µA
Charge Complete,
No Battery
—
25
50
µA
PROG Floating
Supply Input
—
1
5
µA
VDD < (VBAT - 50 mV)
—
0.1
2
µA
VDD < VSTOP
UVLO Start Threshold
VSTART
3.3
3.45
3.6
V
VDD Low-to-High
UVLO Stop Threshold
VSTOP
3.2
3.38
3.5
V
VDD High-to-Low
UVLO Hysteresis
VHYS
—
70
—
mV
4.168
4.20
4.232
V
MCP7383X-2
4.317
4.35
4.383
V
MCP7383X-3
4.367
4.40
4.433
V
MCP7383X-4
4.466
4.50
4.534
V
MCP7383X-5
Voltage Regulation (Constant-Voltage Mode)
Regulated Output Voltage
VREG
VDD = [VREG(typical)+1V]
IOUT = 10 mA
TA = -5°C to +55°C
Line Regulation
|(ΔVBAT/
VBAT)/ΔVDD|
—
0.09
0.30
%/V
Load Regulation
|ΔVBAT/VBAT|
—
0.05
0.30
%
IOUT = 10 mA to 50 mA
VDD = [VREG(typical)+1V]
PSRR
—
52
—-
dB
IOUT=10 mA, 10Hz to 1 kHz
—
47
—
dB
IOUT=10 mA, 10Hz to 10 kHz
—
22
—
dB
IOUT=10 mA, 10Hz to 1 MHz
Supply Ripple Attenuation
VDD = [VREG(typical)+1V] to
6V, IOUT = 10 mA
Current Regulation (Fast Charge Constant-Current Mode)
Fast Charge Current
Regulation
IREG
90
100
110
mA
PROG = 10 kΩ
450
505
550
mA
PROG = 2.0 kΩ, Note 1
12.5
14.5
16.5
mA
PROG = 67 kΩ
TA = -5°C to +55°C
Note 1:
Not production tested. Ensured by design.
© 2008 Microchip Technology Inc.
DS21984E-page 3
MCP73831/2
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40°C to +85°C.
Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)
Precondition Current
Ratio
IPREG / IREG
7.5
10
12.5
%
PROG = 2.0 kΩ to 10 kΩ
15
20
25
%
PROG = 2.0 kΩ to 10 kΩ
30
40
50
%
PROG = 2.0 kΩ to 10 kΩ
—
100
—
%
No Preconditioning
TA = -5°C to +55°C
Precondition Voltage
Threshold Ratio
Precondition Hysteresis
VPTH / VREG
64
66.5
69
%
VBAT Low-to-High
69
71.5
74
%
VBAT Low-to-High
VPHYS
—
110
—
mV
VBAT High-to-Low
ITERM / IREG
3.75
5
6.25
%
5.6
7.5
9.4
%
PROG = 2.0 kΩ to 10 kΩ
8.5
10
11.5
%
PROG = 2.0 kΩ to 10 kΩ
15
20
25
%
PROG = 2.0 kΩ to 10 kΩ
Charge Termination
Charge Termination
Current Ratio
PROG = 2.0 kΩ to 10 kΩ
TA = -5°C to +55°C
Automatic Recharge
Recharge Voltage
Threshold Ratio
VRTH / VREG
91.5
94.0
96.5
%
VBAT High-to-Low
94
96.5
99
%
VBAT High-to-Low
RDSON
—
350
—
mΩ
VDD = 3.75V, TJ = 105°C
IDISCHARGE
—
0.15
2
µA
PROG Floating
Pass Transistor ON-Resistance
ON-Resistance
Battery Discharge Current
Output Reverse Leakage
Current
—
0.25
2
µA
VDD Floating
—
0.15
2
µA
VDD < VSTOP
—
-5.5
-15
µA
Charge Complete
mA
Status Indicator – STAT
Sink Current
ISINK
—
—
25
Low Output Voltage
VOL
—
0.4
1
V
ISOURCE
—
—
35
mA
VOH
—
VDD-0.4
VDD - 1
V
ISOURCE = 4 mA (MCP73831)
ILK
—
0.03
1
µA
High-Impedance
Charge Impedance
Range
RPROG
2
—
67
kΩ
Minimum Shutdown
Impedance
RPROG
70
—
200
kΩ
Automatic Power Down
Entry Threshold
VPDENTER
VDD<(VBAT
+20 mV)
VDD<(VBAT
+50 mV)
—
3.5V ≤ VBAT ≤ VREG
VDD Falling
Automatic Power Down
Exit Threshold
VPDEXIT
—
VDD<(VBAT
+150 mV)
VDD<(VBAT
+200 mV)
3.5V ≤ VBAT ≤ VREG
VDD Rising
Die Temperature
TSD
—
150
—
°C
Die Temperature
Hysteresis
TSDHYS
—
10
—
°C
Source Current
High Output Voltage
Input Leakage Current
ISINK = 4 mA
PROG Input
Automatic Power Down
Thermal Shutdown
Note 1:
Not production tested. Ensured by design.
DS21984E-page 4
© 2008 Microchip Technology Inc.
MCP73831/2
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V,
TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters
Sym.
Min.
Typ.
Max.
Units
tSTART
—
—
5
ms
VDD Low-to-High
tDELAY
—
—
1
ms
VBAT < VPTH to VBAT > VPTH
Current Rise Time Out of
Preconditioning
tRISE
—
—
1
ms
IOUT Rising to 90% of IREG
Termination Comparator
Filter
tTERM
0.4
1.3
3.2
ms
Average IOUT Falling
tCHARGE
0.4
1.3
3.2
ms
Average VBAT
Status Output turn-off
tOFF
—
—
200
µs
ISINK = 1 mA to 0 mA
Status Output turn-on
tON
—
—
200
µs
ISINK = 0 mA to 1 mA
UVLO Start Delay
Conditions
Constant-Current Regulation
Transition Time Out of
Preconditioning
Charge Comparator Filter
Status Indicator
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V.
Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
—
+85
°C
Operating Temperature Range
TJ
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
5-Lead, SOT-23
θJA
—
230
—
°C/W
4-Layer JC51-7 Standard
Board, Natural Convection
(Note 2)
8-Lead, 2 mm x 3 mm, DFN
θJA
—
76
—
°C/W
4-Layer JC51-7 Standard
Board, Natural Convection
(Note 1)
Thermal Package Resistances
Note 1:
2:
This represents the minimum copper condition on the PCB (Printed Circuit Board).
With large copper area on the PCB, the SOT-23-5 thermal resistance ( θJA ) can reach a typical value of
130°C/W or better.
© 2008 Microchip Technology Inc.
DS21984E-page 5
MCP73831/2
NOTES:
DS21984E-page 6
© 2008 Microchip Technology Inc.
MCP73831/2
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
4.210
MCP73831-2
4.205
IOUT = 10 mA
4.200
Charge Current (mA)
Battery Regulation Voltage
(V)
Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.
4.195
4.190
IOUT = 100 mA
4.185
IOUT = 450 mA
4.180
4.175
4.170
4.50
4.75
5.00
5.25
5.50
5.75
6.00
500
450
400
350
300
250
200
150
100
50
0
2
Supply Voltage (V)
4.210
104
Charge Current (mA)
4.200
IOUT = 10 mA
4.195
4.190
4.185
IOUT = 100 mA
4.180
4.175
FIGURE 2-4:
Charge Current (IOUT) vs.
Programming Resistor (RPROG).
MCP73831-2
4.205
IOUT = 450 mA
RPROG = 10 kΩ
103
102
101
100
99
98
97
96
4.50
80
70
60
50
40
30
20
0
10
-10
-20
-30
4.170
-40
Battery Regulation Voltage (V)
FIGURE 2-1:
Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD).
7 12 17 22 27 32 37 42 47 52 57 62 67
Programming Resistor (kΩ)
4.75
+85°C
0.30
0.20
0.15
5.50
516
0.40
0.25
5.25
-40°C
+25°C
0.10
0.05
0.00
3.00
3.20
3.40
3.60
3.80
4.00
4.20
Battery Regulation Voltage (V)
FIGURE 2-3:
Output Leakage Current
(IDISCHARGE) vs. Battery Regulation Voltage
(VBAT).
© 2008 Microchip Technology Inc.
5.75
6.00
FIGURE 2-5:
Charge Current (IOUT) vs.
Supply Voltage (VDD).
Charge Current (mA)
Output Leakage Current (µA)
FIGURE 2-2:
Battery Regulation Voltage
(VBAT) vs. Ambient Temperature (TA).
0.35
5.00
Supply Voltage (V)
Ambient Temperature (°C)
RPROG = 2 kΩ
514
512
510
508
506
504
502
500
4.50
4.75
5.00
5.25
5.50
5.75
6.00
Supply Voltage (V)
FIGURE 2-6:
Charge Current (IOUT) vs.
Supply Voltage (VDD).
DS21984E-page 7
MCP73831/2
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.
525
RPROG = 10 kΩ
103
Charge Current (mA)
102
101
100
99
98
97
RPROG = 2 kΩ
450
375
300
225
150
75
0
-10
Attenuation (dB)
512
510
508
506
504
80
70
60
50
40
30
20
0
10
-10
-20
-30
0.1
FIGURE 2-8:
Charge Current (IOUT) vs.
Ambient Temperature (TA).
0
-10
Attenuation (dB)
90
75
60
45
30
15
155
145
135
125
115
105
95
85
75
65
55
45
0
35
10
155
145
135
115
125
100
1000
FIGURE 2-11:
Power Supply Ripple
Rejection (PSRR).
RPROG = 10 kΩ
25
1
Frequency (kHz)
Ambient Temperature (°C)
Charge Current (mA)
95
-40
-60
0.01
Junction Temperature (°C)
FIGURE 2-9:
Charge Current (IOUT) vs.
Junction Temperature (TJ).
DS21984E-page 8
105
-30
500
105
85
-20
-50
120
75
VAC = 100 mVp-p
IOUT = 10 mA
COUT = 4.7 µF, X7R Ceramic
502
-40
Charge Current (mA)
FIGURE 2-10:
Charge Current (IOUT) vs.
Junction Temperature (TJ).
RPROG = 2 kΩ
514
65
Junction Temperature (°C)
FIGURE 2-7:
Charge Current (IOUT) vs.
Ambient Temperature (TA).
516
55
25
80
70
60
50
40
30
20
0
10
-10
-20
-30
-40
Ambient Temperature (°C)
45
0
96
35
Charge Current (mA)
104
VAC = 100 mVp-p
IOUT = 100 mA
COUT = 4.7 µF, X7R Ceramic
-20
-30
-40
-50
-60
0.01
0.1
1
10
100
1000
Frequency (kHz)
FIGURE 2-12:
Power Supply Ripple
Rejection (PSRR).
© 2008 Microchip Technology Inc.
MCP73831/2
TYPICAL PERFORMANCE CURVES (CONTINUED)
1.40
0.10
0.05
1.20
0.05
10
0.00
1.00
0.00
8
-0.05
0.80
-0.05
6
-0.10
0.60
-0.10
4
-0.15
0.40
-0.15
2
-0.20
0.20
-0.20
0
200
180
160
-0.08
-0.10
COUT = 4.7 µF, X7R Ceramic
200
180
160
140
120
100
80
60
40
20
-0.12
0
-0.05
Time (µs)
FIGURE 2-15:
Load Transient Response.
© 2008 Microchip Technology Inc.
200
180
160
140
120
80
300
2.0
200
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 2 kΩ
1.0
100
0.0
Charge Current (mA)
0.05
3.0
0
240
-0.06
210
-0.04
0.10
180
0.15
400
150
-0.02
500
4.0
120
0.20
5.0
60
0.00
600
30
0.25
6.0
0
0.02
FIGURE 2-17:
Complete Charge Cycle
(180 mAh Li-Ion Battery).
Battery Voltage (V)
0.04
0.30
Output Ripple (V)
Output Current (A)
Line Transient Response.
90
120
100
80
60
40
20
140
Time (minutes)
0.35
0.00
20
0
Time (µs)
FIGURE 2-14:
40
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 10 kΩ
1.0
0.0
-0.30
0
-2
2.0
Charge Current (mA)
-0.25
60
180
-0.20
IOUT = 100 mA
COUT = 4.7 µF, X7R Ceramic
3.0
160
-0.15
140
-0.10
4
80
120
6
4.0
100
-0.05
80
8
100
60
0.00
120
5.0
40
10
Load Transient Response.
6.0
20
0.05
FIGURE 2-16:
Battery Voltage (V)
0.10
Output Ripple (V)
Source Voltage (V)
Line Transient Response.
12
0
-0.30
Time (µs)
14
2
100
40
0
Time (µs)
FIGURE 2-13:
-0.25
COUT = 4.7 µF, X7R Ceramic
-0.20
200
180
160
140
120
80
100
60
40
20
-0.30
0
-2
0.00
60
-0.25
20
IOUT = 10 mA
COUT = 4.7 µF, X7R Ceramic
0
Output Ripple (V)
0.10
12
Output Current (A)
14
Output Ripple (V)
Source Voltage (V)
Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.
Time (minutes)
FIGURE 2-18:
Complete Charge Cycle
(1000 mAh Li-Ion Battery).
DS21984E-page 9
MCP73831/2
NOTES:
DS21984E-page 10
© 2008 Microchip Technology Inc.
MCP73831/2
3.0
PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLES
Pin No.
DFN
3.1
SOT-23-5
Symbol
Function
1
4
VDD
Battery Management Input Supply
2
—
VDD
Battery Management Input Supply
3
3
VBAT
Battery Charge Control Output
4
—
VBAT
Battery Charge Control Output
5
1
STAT
Charge Status Output
6
2
VSS
Battery Management 0V Reference
7
—
NC
No Connection
8
5
PROG
9
—
EP
Current Regulation Set and Charge Control Enable
Exposed Thermal Pad (EP); must be connected to VSS.
Battery Management Input Supply
(VDD)
A supply voltage of [VREG (typical) + 0.3V] to 6V is
recommended. Bypass to VSS with a minimum of
4.7 µF.
3.2
Battery Charge Control Output
(VBAT)
3.4
Battery Management 0V Reference
(VSS)
Connect to negative terminal of battery and input
supply.
3.5
Current Regulation Set (PROG)
Preconditioning, fast charge and termination currents
are scaled by placing a resistor from PROG to VSS.
Connect to positive terminal of battery. Drain terminal
of internal P-channel MOSFET pass transistor. Bypass
to VSS with a minimum of 4.7 µF to ensure loop stability
when the battery is disconnected.
The charge management controller can be disabled by
allowing the PROG input to float.
3.3
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the VSS pin; they must
be connected to the same potential on the Printed
Circuit Board (PCB).
Charge Status Output (STAT)
STAT is an output for connection to an LED for charge
status indication. Alternatively, a pull-up resistor can be
applied for interfacing to a host microcontroller.
STAT is a tri-state logic output on the MCP73831 and
an open-drain output on the MCP73832.
© 2008 Microchip Technology Inc.
3.6
Exposed Thermal Pad (EP)
Vias are recommended to add from land area of EP to
a copper layer on the other side of the PCB for better
thermal performance.
DS21984E-page 11
MCP73831/2
NOTES:
DS21984E-page 12
© 2008 Microchip Technology Inc.
MCP73831/2
4.0
DEVICE OVERVIEW
The MCP73831/2 are highly advanced linear charge
management controllers. Figure 4-1 depicts the
operational flow algorithm from charge initiation to
completion and automatic recharge.
The UVLO circuit is always active. Whenever the input
supply is below the UVLO threshold or within +50 mV
of the voltage at the VBAT pin, the MCP73831/2 are
placed in a Shutdown mode.
SHUTDOWN MODE
VDD < VUVLO
VDD < VBAT
or
PROG > 200 kΩ
STAT = Hi-Z
During any UVLO condition, the battery reverse
discharge current will be less than 2 µA.
VBAT < VPTH
PRECONDITIONING
MODE
Charge Current = IPREG
STAT = LOW
VBAT > VPTH
FAST CHARGE
MODE
Charge Current = IREG
STAT = LOW
VBAT > VPTH
VBAT < VRTH
VBAT = VREG
CONSTANT VOLTAGE
MODE
Charge Voltage = VREG
STAT = LOW
IBAT < ITERM
CHARGE COMPLETE
MODE
No Charge Current
STAT = HIGH (MCP73831)
STAT = Hi-Z (MCP73832)
FIGURE 4-1:
4.1
Flowchart.
Undervoltage Lockout (UVLO)
An internal UVLO circuit monitors the input voltage and
keeps the charger in Shutdown mode until the input
supply rises above the UVLO threshold. The UVLO
circuitry has a built in hysteresis of 100 mV.
In the event a battery is present when the input power
is applied, the input supply must rise 150 mV above the
battery voltage before the MCP73831/2 becomes operational.
© 2008 Microchip Technology Inc.
The UVLO circuit places the device in Shutdown mode
if the input supply falls to within +50 mV of the battery
voltage. Again, the input supply must rise to a level
150 mV above the battery voltage before the
MCP73831/2 become operational.
4.2
Charge Qualification
For a charge cycle to begin, all UVLO conditions must
be met and a battery or output load must be present. A
charge current programming resistor must be
connected from PROG to VSS. If the PROG pin is open
or floating, the MCP73831/2 are disabled and the
battery reverse discharge current is less than 2 µA. In
this manner, the PROG pin acts as a charge enable
and can be used as a manual shutdown.
4.3
Preconditioning
If the voltage at the VBAT pin is less than the preconditioning threshold, the MCP73831/2 enter a preconditioning or Trickle Charge mode. The preconditioning
threshold is factory set. Refer to Section 1.0 “Electrical Characteristics” for preconditioning threshold
options and the Product Identification System for
standard options.
In this mode, the MCP73831/2 supply a percentage of
the charge current (established with the value of the
resistor connected to the PROG pin) to the battery. The
percentage or ratio of the current is factory set. Refer to
Section 1.0
“Electrical
Characteristics”
for
preconditioning current options and the ”Product
Identification System” for standard options.
When the voltage at the VBAT pin rises above the
preconditioning threshold, the MCP73831/2 enter the
Constant-Current or Fast Charge mode.
4.4
Fast Charge Constant-Current
Mode
During the Constant-Current mode, the programmed
charge current is supplied to the battery or load. The
charge current is established using a single resistor
from PROG to VSS. Constant-Current mode is
maintained until the voltage at the VBAT pin reaches the
regulation voltage, VREG.
DS21984E-page 13
MCP73831/2
Constant-Voltage Mode
When the voltage at the VBAT pin reaches the regulation voltage, VREG, constant voltage regulation begins.
The regulation voltage is factory set to 4.2V, 4.35V,
4.40V, or 4.50V with a tolerance of ±0.75%.
Thermal Regulation
The MCP73831/2 limit the charge current based on the
die temperature. The thermal regulation optimizes the
charge cycle time while maintaining device reliability.
Figure 4-2 depicts the thermal regulation for the
MCP73831/2.
Charge Termination
525
RPROG = 2 kΩ
450
375
300
225
150
75
FIGURE 4-2:
4.7
4.9
The MCP73831/2 continuously monitor the voltage at
the VBAT pin in the Charge Complete mode. If the
voltage drops below the recharge threshold, another
charge cycle begins and current is once again supplied
to the battery or load. The recharge threshold is factory
set. Refer to Section 1.0 “Electrical Characteristics”
for recharge threshold options and the ”Product
Identification System” for standard options.
DS21984E-page 14
155
145
135
125
115
95
105
85
75
65
55
Junction Temperature (°C)
The charge current is latched off and the MCP73831/2
enter a Charge Complete mode.
Automatic Recharge
45
0
35
The charge cycle is terminated when, during ConstantVoltage mode, the average charge current diminishes
below a percentage of the programmed charge current
(established with the value of the resistor connected to
the PROG pin). A 1 ms filter time on the termination
comparator ensures that transient load conditions do
not result in premature charge cycle termination. The
percentage or ratio of the current is factory set. Refer to
Section 1.0 “Electrical Characteristics” for charge
termination current options and the ”Product
Identification System” for standard options.
25
4.6
4.8
Charge Current (mA)
4.5
Thermal Regulation.
Thermal Shutdown
The MCP73831/2 suspend charge if the die temperature exceeds 150°C. Charging will resume when the
die temperature has cooled by approximately 10°C.
© 2008 Microchip Technology Inc.
MCP73831/2
5.0
DETAILED DESCRIPTION
5.2
5.1
Analog Circuitry
5.2.1
5.1.1
BATTERY MANAGEMENT INPUT
SUPPLY (VDD)
The VDD input is the input supply to the MCP73831/2.
The MCP73831/2 automatically enter a Power-Down
mode if the voltage on the VDD input falls below the
UVLO voltage (VSTOP). This feature prevents draining
the battery pack when the VDD supply is not present.
5.1.2
CURRENT REGULATION SET
(PROG)
Fast charge current regulation can be scaled by placing
a programming resistor (RPROG) from the PROG input
to VSS. The program resistor and the charge current
are calculated using the following equation:
1000VI REG = ---------------R PROG
Where:
Digital Circuitry
STATUS INDICATOR (STAT)
The charge status output of the MCP73831 has three
different states: High (H), Low (L), and High-Impedance (Hi-Z). The charge status output of the
MCP73832 is open-drain, and, as such, has two
different states: Low (L), and High-Impedance (Hi-Z).
The charge charge status output can be used to
illuminate 1, 2, or tri-color LEDs. Optionally, the charge
status output can be used as an interface to a host
microcontroller.
Table 5-1 summarize the state of the status output
during a charge cycle..
TABLE 5-1:
STATUS OUTPUT
Charge Cycle State
STAT1
MCP73831 MCP73832
Shutdown
Hi-Z
Hi-Z
No Battery Present
Hi-Z
Hi-Z
Preconditioning
L
L
L
L
RPROG
=
kOhms
Constant-Current Fast
Charge
IREG
=
milliampere
Constant Voltage
L
L
Charge Complete –
Standby
H
Hi-Z
The preconditioning trickle charge current and the
charge termination current are ratiometric to the fast
charge current based on the selected device options.
5.1.3
BATTERY CHARGE CONTROL
OUTPUT (VBAT)
The battery charge control output is the drain terminal
of an internal P-channel MOSFET. The MCP73831/2
provide constant current and voltage regulation to the
battery pack by controlling this MOSFET in the linear
region. The battery charge control output should be
connected to the positive terminal of the battery pack.
© 2008 Microchip Technology Inc.
5.2.2
DEVICE DISABLE (PROG)
The current regulation set input pin (PROG) can be
used to terminate a charge at any time during the
charge cycle, as well as to initiate a charge cycle or
initiate a recharge cycle.
Placing a programming resistor from the PROG input to
VSS enables the device. Allowing the PROG input to
float or by applying a logic-high input signal, disables
the device and terminates a charge cycle. When
disabled, the device’s supply current is reduced to
25 µA, typically.
DS21984E-page 15
MCP73831/2
NOTES:
DS21984E-page 16
© 2008 Microchip Technology Inc.
MCP73831/2
6.0
APPLICATIONS
cells constant current followed by constant voltage.
Figure 6-1 depicts a typical stand-alone application
circuit, while Figures 6-2 and 6-3 depict the
accompanying charge profile.
The MCP73831/2 are designed to operate in conjunction with a host microcontroller or in a stand-alone
application. The MCP73831/2 provide the preferred
charge algorithm for Lithium-Ion and Lithium-Polymer
Li-Ion Battery Charger
4
VDD
VBAT
3
RLED
CIN
COUT
STAT
REGULATED
WALL CUBE
PROG
+ Single
Li-Ion
- Cell
5
LED
RPROG
1
VSS
2
MCP73831
120
6.0
600
5.0
100
5.0
500
4.0
80
4.0
400
3.0
60
3.0
300
6.1
240
210
180
150
120
90
0
Time (minutes)
FIGURE 6-3:
Typical Charge Profile in
Thermal Regulation (1000 mAh Battery).
Application Circuit Design
Due to the low efficiency of linear charging, the most
important factors are thermal design and cost, which
are a direct function of the input voltage, output current
and thermal impedance between the battery charger
and the ambient cooling air. The worst-case situation is
when the device has transitioned from the
Preconditioning mode to the Constant-Current mode.
In this situation, the battery charger has to dissipate the
maximum power. A trade-off must be made between
the charge current, cost and thermal requirements of
the charger.
6.1.1
100
0.0
Time (minutes)
FIGURE 6-2:
Typical Charge Profile
(180 mAh Battery).
200
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 2 kΩ
1.0
180
160
140
120
100
80
60
40
20
0
0
0.0
2.0
60
20
30
40
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 10 kΩ
1.0
0
2.0
Battery Voltage (V)
6.0
Charge Current (mA)
Typical Application Circuit.
Charge Current (mA)
Battery Voltage (V)
FIGURE 6-1:
6.1.1.1
Current Programming Resistor
(RPROG)
The preferred fast charge current for Lithium-Ion cells
is at the 1C rate, with an absolute maximum current at
the 2C rate. For example, a 500 mAh battery pack has
a preferred fast charge current of 500 mA. Charging at
this rate provides the shortest charge cycle times
without degradation to the battery pack performance or
life.
COMPONENT SELECTION
Selection of the external components in Figure 6-1 is
crucial to the integrity and reliability of the charging
system. The following discussion is intended as a guide
for the component selection process.
© 2008 Microchip Technology Inc.
DS21984E-page 17
MCP73831/2
6.1.1.2
Thermal Considerations
6.1.1.5
The worst-case power dissipation in the battery
charger occurs when the input voltage is at the
maximum and the device has transitioned from the
Preconditioning mode to the Constant-Current mode.
In this case, the power dissipation is:
PowerDissipation = ( V
DDMAX
–V
PTHMIN
)×I
REGMAX
Where:
VDDMAX
=
the maximum input voltage
IREGMAX
=
the maximum fast charge current
VPTHMIN
=
the minimum transition threshold
voltage
Power dissipation with a 5V, ±10% input voltage source
is:
PowerDissipation = ( 5.5V – 2.7V ) × 550mA = 1.54W
This power dissipation with the battery charger in the
SOT-23-5 package will cause thermal regulation to be
entered as depicted in Figure 6-3. Alternatively, the
2mm x 3mm DFN package could be utilized to reduce
charge cycle times.
6.1.1.3
External Capacitors
The MCP73831/2 are stable with or without a battery
load. In order to maintain good AC stability in the Constant-Voltage mode, a minimum capacitance of 4.7 µF
is recommended to bypass the VBAT pin to VSS. This
capacitance provides compensation when there is no
battery load. In addition, the battery and interconnections appear inductive at high frequencies. These
elements are in the control feedback loop during
Constant-Voltage mode. Therefore, the bypass capacitance may be necessary to compensate for the
inductive nature of the battery pack.
Virtually any good quality output filter capacitor can be
used, independent of the capacitor’s minimum
Effective Series Resistance (ESR) value. The actual
value of the capacitor (and its associated ESR)
depends on the output load current. A 4.7 µF ceramic,
tantalum or aluminum electrolytic capacitor at the
output is usually sufficient to ensure stability for output
currents up to a 500 mA.
6.1.1.4
Reverse-Blocking Protection
The MCP73831/2 provide protection from a faulted or
shorted input. Without the protection, a faulted or
shorted input would discharge the battery pack through
the body diode of the internal pass transistor.
DS21984E-page 18
Charge Inhibit
The current regulation set input pin (PROG) can be
used to terminate a charge at any time during the
charge cycle, as well as to initiate a charge cycle or
initiate a recharge cycle.
Placing a programming resistor from the PROG input to
VSS enables the device. Allowing the PROG input to
float or by applying a logic-high input signal, disables
the device and terminates a charge cycle. When
disabled, the device’s supply current is reduced to
25 µA, typically.
6.1.1.6
Charge Status Interface
A status output provides information on the state of
charge. The output can be used to illuminate external
LEDs or interface to a host microcontroller. Refer to
Table 5-1 for a summary of the state of the status
output during a charge cycle.
6.2
PCB Layout Issues
For optimum voltage regulation, place the battery pack
as close as possible to the device’s VBAT and VSS pins.
This is recommended to minimize voltage drops along
the high current-carrying PCB traces.
If the PCB layout is used as a heatsink, adding many
vias in the heatsink pad can help conduct more heat to
the backplane of the PCB, thus reducing the maximum
junction temperature. Figures 6-4 and 6-5 depict a
typical layout with PCB heatsinking.
RLED LED
VSS
VBAT
FIGURE 6-4:
RPROG
COUT MCP73831 C
IN
VDD
Typical Layout (Top).
VSS
VBAT
FIGURE 6-5:
VDD
Typical Layout (Bottom).
© 2008 Microchip Technology Inc.
MCP73831/2
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
Example:
8-Lead DFN (2 mm x 3 mm)
Device
XXX
YWW
NN
Code
MCP73831T-2ACI/MC
AAE
MCP73831T-2ATI/MC
AAF
MCP73831T-2DCI/MC
AAG
MCP73831T-3ACI/MC
AAH
MCP73831T-4ADI/MC
AAJ
MCP73831T-5ACI/MC
AAK
MCP73832T-2ACI/MC
AAL
MCP73832T-2ATI/MC
AAM
MCP73832T-2DCI/MC
AAP
MCP73832T-3ACI/MC
AAQ
MCP73832T-4ADI/MC
AAR
MCP73832T-5ACI/MC
AAS
AAE
739
25
Note: Applies to 8-Lead DFN
Example:
5-Lead SOT-23
Device
XXNN
Code
MCP73831T-2ACI/OT
KDNN
MCP73831T-2ATI/OT
KENN
MCP73831T-2DCI/OT
KFNN
MCP73831T-3ACI/OT
KGNN
MCP73831T-4ADI/OT
KHNN
MCP73831T-5ACI/OT
KJNN
MCP73832T-2ACI/OT
KKNN
MCP73832T-2ATI/OT
KLNN
MCP73832T-2DCI/OT
KMNN
MCP73832T-3ACI/OT
KPNN
MCP73832T-4ADI/OT
KQNN
MCP73832T-5ACI/OT
KRNN
MCP73832T-2DFI/OT
LUNN
KD25
Note: Applies to 5-Lead SOT-23
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2008 Microchip Technology Inc.
DS21984E-page 19
MCP73831/2
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© 2008 Microchip Technology Inc.
MCP73831/2
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© 2008 Microchip Technology Inc.
DS21984E-page 21
MCP73831/2
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DS21984E-page 22
© 2008 Microchip Technology Inc.
MCP73831/2
APPENDIX A:
REVISION HISTORY
Revision E (September 2008)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
7.
8.
Package Types: Changed DFN pinout diagram.
1.0 “Electrical Characteristics”: Changed
“Charge Impedance Range from 20 kΩ to
67 kΩ.
1.0 “Electrical Characteristics”: Misc. Formatting changes.
Section 2.0 “Typical Performance Curves”:
Updated Figure 2-4.
Section 3.0
“Pin
Description”:
Added
Exposed Pad pin to table and added
Section 3.6 “Exposed Thermal Pad (EP)”.
Updated Appendix A: “Revision History”
Added Land Patttern Package Outline Drawing
for 2x3 DFN package.
Pagination fixes throughout document per
Marcom Standards.
Revision D (April 2008)
The following is the list of modifications:
1.
Changed Charge Termination Current Ratio to
8.5% minimum and 11.5% maximum.
Revision C (October 2007)
The following is the list of modifications:
1.
2.
3.
Numerous edits throughout document.
Added note to Temperature Specifications table.
Updated Figure 2-4.
Revision B (March 2006)
The following is the list of modifications:
1.
Added MCP73832 through document.
Revision A (November 2005)
• Original Release of this Document.
© 2008 Microchip Technology Inc.
DS21984E-page 19
MCP73831/2
NOTES:
DS21984E-page 20
© 2008 Microchip Technology Inc.
MCP73831/2
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
XX
Examples: *
/XX
X
a)
Device
VREG
Options Temperature Package
Range
b)
c)
Device:
MCP73831:
MCP73831T:
Single-Cell Charge Controller
Single-Cell Charge Controller
(Tape and Reel)
Single-Cell Charge Controller
Single-Cell Charge Controller
(Tape and Reel)
MCP73832
MCP73832T:
Regulation
Voltage:
Code
VREG
2
3
4
5
4.20V
4.35V
4.40V
4.50V
d)
a)
b)
c)
d)
=
=
=
=
a)
b)
Options: *
Code
AC
AD
AT
DC
IPREG/IREG
VPTH/VREG
ITERM/IREG
VRTH/VREG
10
10
10
100
66.5
66.5
71.5
x
7.5
7.5
20
7.5
96.5
94
94
96.5
* Consult Factory for Alternative Device Options
c)
d)
a)
b)
Temperature
Range:
I
Package:
MC
OT
= -40°C to +85°C (Industrial)
c)
d)
= Dual-Flat, No-Lead (2x3 mm body), 8-Lead
= Small Outline Transistor (SOT23), 5-Lead
a)
b)
c)
d)
a)
b)
c)
d)
MCP73831-2ACI/OT: 4.20V VREG,
Options AC, 5LD SOT23 Pkg
MCP73831T-2ACI/OT: Tape and Reel,
4.20V VREG, Options AC, 5LD SOT23 Pkg
MCP73832-2ACI/MC: 4.20V VREG,
Options AC, 8LD DFN Package
MCP73832T-2ACI/MC: Tape and Reel,
4.20V VREG, Options AC, 8LD DFN Package
MCP73831-2ATI/OT: 4.20V VREG,
Options AT, 5LD SOT23 Pkg
MCP73831T-2ATI/OT: Tape and Reel,
4.20V VREG, Options AT, 5LD SOT23 Pkg
MCP73832-2ATI/MC: 4.20V VREG,
Options AT, 8LD DFN Package
MCP73832T-2ATI/MC: Tape and Reel,
4.20V VREG, Options AT, 8LD DFN Package
MCP73831-2DCI/OT: 4.20V VREG,
Options DC, 5LD SOT23 Pkg
MCP73831T-2DCI/OT: Tape and Reel,
4.20V VREG, Options DC, 5LD SOT23 Pkg
MCP73832-2DCI/MC: 4.20V VREG,
Options DC, 8LD DFN Package
MCP73832T-2DCI/MC: Tape and Reel,
4.20V VREG, Options DC, 8LD DFN Package
MCP73831-3ACI/OT: 4.35V VREG,
Options AC, 5LD SOT23 Pkg
MCP73831T-3ACI/OT: Tape and Reel,
4.35V VREG, Options AC, 5LD SOT23 Pkg
MCP73832-3ACI/MC: 4.35V VREG,
Options AC, 8LD DFN Package
MCP73832T-3ACI/MC: Tape and Reel,
4.35V VREG, Options AC, 8LD DFN Package
MCP73831-4ADI/OT: 4.40V VREG,
Options AD, 5LD SOT23 Pkg
MCP73831T-4ADI/OT: Tape and Reel,
4.40V VREG, Options AD, 5LD SOT23 Pkg
MCP73832-4ADI/MC: 4.40V VREG,
Options AD, 8LD DFN Package
MCP73832T-4ADI/MC: Tape and Reel,
4.40V VREG, Options AD, 8LD DFN Package
MCP73831-5ACI/OT: 4.50V VREG,
Options AC, 5LD SOT23 Pkg
MCP73831T-5ACI/OT: Tape and Reel,
4.50V VREG, Options AC, 5LD SOT23 Pkg
MCP73832-5ACI/MC: 4.50V VREG,
Options AC, 8LD DFN Package
MCP73832T-5ACI/MC: Tape and Reel,
4.50V VREG, Options AC, 8LD DFN Package
* Consult Factory for Alternate Device Options
© 2008 Microchip Technology Inc.
DS21984E-page 21
MCP73831/2
NOTES:
DS21984E-page 22
© 2008 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, rfPIC, SmartShunt and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
FilterLab, Linear Active Thermistor, MXDEV, MXLAB,
SEEVAL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM,
PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo,
PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total
Endurance, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2008, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2008 Microchip Technology Inc.
DS21984E-page 23
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01/02/08
DS21984E-page 24
© 2008 Microchip Technology Inc.