MITSUBISHI RA60H4047M1

MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA60H4047M1
RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H4047M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the nominal output signal (Pout=60W) attenuates up to
60 dB. The output power and the drain current increase as the
gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 5mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current IGG=5mA (typ) @ VGG=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
BLOCK DIAGRAM
2
3
1
4
5
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA60H4047M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA60H4047M1-101
Antistatic tray,
10 modules/tray
RA60H4047M1
MITSUBISHI ELECTRIC
1/9
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3 Mar 2008
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA60H4047M1
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<5V, Pin=0W
17
V
VGG
Gate Voltage
VDD<12.5V, Pin=50mW
6
V
Pin
Input Power
100
mW
Pout
Output Power
80
W
Tcase(OP)
Tstg
f=400-470MHz,
VGG<5V
Operation Case Temperature Range
Storage Temperature Range
-30 to +100
°C
-40 to +110
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
F
CONDITIONS
Frequency Range
MIN
400
Pout
Output Power
VDD=12.5V
60
ηT
Total Efficiency
VGG=5V
40
2fo
2
ρin
Input VSWR
IGG
Gate Current
IDD
Leakage Current
nd
Harmonic
—
Stability
—
Load VSWR Tolerance
TYP
VDD=17V, VGG=0V, Pin=0W
VDD=10.0-15.2V, Pin=25-70mW,
5<Pout <65W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW,
Pout=60W (VGG control), Load VSWR=20:1
UNIT
470
MHz
W
%
Pin=50mW
VDD=0V, VGG=5V, Pin=0W
MAX
5
-40
dBc
3:1
—
6
mA
1
mA
No parasitic oscillation
—
No degradation or destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
RA60H4047M1
MITSUBISHI ELECTRIC
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA60H4047M1
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
nd
O U T PU T PO WER , T O T AL EFFIC IEN C Y,
v e rsus FR EQ U EN C Y
2 ,3
P out
70
HARMONICS (dBc)
60
50
ηT
40
30
V DD =12.5V
V GG=5V
P in=50m W
20
10
-40
-50
2 nd
-60
-70
3 rd
-80
390 400 410 420 430 440 450 460 470 480
FRE QUE NCY f(M Hz )
390 400 410 420 430 440 450 460 470 480
FRE QUE NCY f(M Hz )
IN PU T VSWR v e rsus FR EQ U EN C Y
G AT E C U R R EN T v e rsus FR EQ U EN C Y
8
5
V DD =12.5V
V GG=5V
P in=50m W
4
GATE CURERENT (mA)
3
2
7
6
Ι GG
5
4
3
2
V DD =12.5V
V GG=5V
P in=50m W
1
ρ in
1
0
390 400 410 420 430 440 450 460 470 480
FRE QUE NCY f(M Hz )
390 400 410 420 430 440 450 460 470 480
FRE QUE NCY f(M Hz )
O U T PU T PO WER , PO WER G AIN and
D R AIN C U R R EN T v e rsus IN PU T PO WER
O U T PU T PO WER , PO WER G AIN and
D R AIN C U R R EN T v e rsus IN PU T PO WER
24
20
Gp
40
16
30
12
20
8
ID D
10
f=400M Hz ,
V DD =12.5V ,
V GG=5V
0
-10
-5
0
5
10
15
4
POWER GAIN Gp(dB)
50
60
OUTPUT POWER Pout (dBm)
P out
DRAIN CURRENT DI D (A)
60
24
P out
50
40
16
30
12
20
8
ID D
-10
20
-5
O U T PU T PO WER , PO WER G AIN and
D R AIN C U R R EN T v e rsus IN PU T PO WER
16
30
12
20
8
f=450M Hz ,
V DD =12.5V ,
V GG=5V
-10
-5
0
5
10
15
4
0
20
POWER GAIN Gp(dB)
40
OUTPUT POWER Pout (dBm)
20
Gp
0
15
0
20
24
P out
50
20
Gp
40
16
30
12
20
8
ID D
f=470M Hz ,
V DD =12.5V ,
V GG=5V
10
0
-10
INP UT P OW E R P in (dB m )
RA60H4047M1
10
60
DRAIN CURRENT DI D (A)
POWER GAIN Gp(dB)
OUTPUT POWER Pout (dBm)
24
P out
10
5
O U T PU T PO WER , PO WER G AIN and
D R AIN C U R R EN T v e rsus IN PU T PO WER
60
ID D
0
4
INP UT P OW E R P in (dB m )
INP UT P OW E R P in (dB m )
50
f=430M Hz ,
V DD =12.5V ,
V GG=5V
10
0
0
20
Gp
DRAIN CURRENT IDD(A)
INPUT VSWR ρ in (-)
V DD =12.5V
V GG=5V
P in=50m W
-5
0
5
10
15
4
DRAIN CURRENT IDD (A)
TOTAL EFFICIENCY(%)
OUTPUT POWER Pout (W)
80
POWER GAIN Gp(dB)
H AR M O N IC S v e rsus FR EQ U EN C Y
-30
90
OUTPUT POWER Pout (dBm)
rd
0
20
INP UT P OW E R P in (dB m )
MITSUBISHI ELECTRIC
3/9
rd
3 Mar2008
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA60H4047M1
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
P out
100
18
90
16
70
14
60
12
ID D
10
40
8
30
6
20
4
10
2
0
0
8
10
12
14
14
60
12
50
6
20
4
10
2
0
16
0
2
4
100
18
90
16
70
14
60
12
ID D
10
40
8
30
6
20
4
10
2
0
0
2
4
6
8
10
12
14
OUTPUT POWER Pout (W)
20
DRAIN CURRENT DI D (A)
OUTPUT POWER Pout (W)
P out
50
14
60
12
ID D
50
8
30
6
20
4
10
2
8
30
6
IGG
4
10
2
0
0
3
4
5
OUTPUT POWER Pout (W)
40
GATE CURRENT IGG(mA)
80
DRAIN CURRENT DI D (A)
OUTPUT POWER Pout (W)
90
16
10
ID D
2
0
4
10
ID D
30
0
0
5
6
OUTPUT POWER Pout (W)
2
GATE CURRENT IGG(mA)
4
DRAIN CURRENT DI D (A)
OUTPUT POWER Pout (W)
6
10
4
4
2
0
1
2
3
4
5
6
18
f=470M Hz ,
V DD =12.5V ,
P in=50m W
70
16
P out
14
60
12
50
10
ID D
40
8
30
6
IGG
20
4
10
2
0
0
0
GA TE V OLTA GE V G G (V )
RA60H4047M1
6
10
80
8
IGG
3
8
IGG
20
90
14
ID D
2
14
12
40
16
10
1
16
P out
50
18
50
0
16
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
12
20
14
60
0
60
30
12
GA TE V OLTA GE V G G (V )
P out
40
10
18
70
6
90
70
8
0
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
f=450M Hz ,
V DD =12.5V ,
P in=50m W
6
f=430M Hz ,
V DD =12.5V ,
P in=50m W
GA TE V OLTA GE V G G (V )
80
10
40
18
12
1
16
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
60
0
18
P out
70
2
14
20
16
DRA IN V OLTA GE V D D (V )
P out
50
14
20
80
16
90
70
12
0
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
f=400M Hz ,
V DD =12.5V ,
P in=50m W
10
f=470M Hz ,
V GG=5V ,
P in=50m W
DRA IN V OLTA GE V D D (V )
80
8
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
100
80
6
DRA IN V OLTA GE V D D (V )
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
f=450M Hz ,
V GG=5V ,
P in=50m W
8
30
DRA IN V OLTA GE V D D (V )
90
10
ID D
40
DRAIN CURRENT DI D (A)
6
16
70
GATE CURRENT IGG(mA)
4
18
GATE CURRENT IGG(mA)
2
80
P out
DRAIN CURRENT DI D (A)
50
20
f=430M Hz ,
V GG=5V ,
P in=50m W
DRAIN CURRENT IDD (A)
OUTPUT POWER Pout (W)
80
20
OUTPUT POWER Pout (W)
f=400M Hz ,
V GG=5V ,
P in=50m W
90
DRAIN CURRENT DI D (A)
100
DRAIN CURRENT DI D (A)
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
1
2
3
4
5
6
GA TE V OLTA GE V G G (V )
MITSUBISHI ELECTRIC
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA60H4047M1
OUTLINE DRAWING (mm)
67±1
④
18±1
10.7±1
③
15±1
① ②
4±0.5
49.8±1
2-R2±0.5
19.4±1
(3.26)
60±1
12.5±1
0.6±0.2
17±1
44±1
（2.6）
（9.9）
3.1+0.6/-0.4
7.3±0.5
56±1
1 RF Input (Pin )
2 Gate Voltage(VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA60H4047M1
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA60H4047M1
TEST BLOCK DIAGRAM
Power
Meter
DUT
1
Signal
Generator
Attenuator
Preamplifier
Attenuator
Directional
Coupler
2
3
4
Z L =50 Ω
Z G =50 Ω
C1
Spectrum
Analyzer
5
Directional
Coupler
Attenuator
Power
Meter
C2
+
DC Power
Supply V DD
+
DC Power
Supply V GG
1 RF Input (Pin)
C1, C2: 4700pF, 22uF in parallel
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
3
1
4
5
2
RA60H4047M1
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA60H4047M1
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal
cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die
bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually
inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the
glass-epoxy substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pin
Pout
Rth(ch-case)
IDD @ ηT=45%
VDD
Stage
(W)
(W)
(V)
(°C/W)
(A)
1st
0.05
5.0
2.1
0.8
12.5
2nd
5.0
60.0
0.5
9.8
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 1.5A – 2.5W + 0.05W) x 2.24°C/W = Tcase + 36.5 °C
Tch2 = Tcase + (12.5V x 10.5A – 60.0W + 2.5W) x 0.45°C/W = Tcase + 33.2 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=60W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (60W/40% - 60W + 0.05W) = 0.33 °C/W
When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 66.5 °C
Tch2 = Tair + 63.2 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
RA60H4047M1
MITSUBISHI ELECTRIC
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA60H4047M1
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltage(VGG).
When the gate voltage is close to zero, the nominal output signal (Pout=60W) is attenuated up to 60 dB and only
a small leakage current flows from the battery into the drain.
Around VGG=0V(minimum), the output power and drain current increases substantially.
Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50Ω?
c) Is the source impedance ZG=50Ω?
Load condition of Output terminal:
This module suppose to use on the condition that load impedance is 50ohm. On the over load condition,this module
run into the short mode in the worst case and the module involve the risk of burn out and smoking of parts including
the substrate in the module.
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips
and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally
induced mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions
exceeding those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile
radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout,
which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures
are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there
is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as
(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or
mishap.
RA60H4047M1
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SALES CONTACT
JAPAN:
Mitsubishi Electric Corporation
Semiconductor Sales Promotion Department
2-2-3 Marunouchi, Chiyoda-ku
Tokyo, Japan 100
Email:
[email protected]
Phone: +81-3-3218-4854
Fax:
+81-3-3218-4861
GERMANY:
Mitsubishi Electric Europe B.V.
Semiconductor
Gothaer Strasse 8
D-40880 Ratingen, Germany
Email:
[email protected]
Phone: +49-2102-486-0
Fax:
+49-2102-486-4140
HONG KONG:
Mitsubishi Electric Hong Kong Ltd.
Semiconductor Division
41/F. Manulife Tower, 169 Electric Road
North Point, Hong Kong
Email:
[email protected]
Phone: +852 2510-0555
Fax:
+852 2510-9822
FRANCE:
Mitsubishi Electric Europe B.V.
Semiconductor
25 Boulevard des Bouvets
F-92741 Nanterre Cedex, France
Email:
[email protected]
Phone: +33-1-55685-668
Fax:
+33-1-55685-739
SINGAPORE:
Mitsubishi Electric Asia PTE Ltd
Semiconductor Division
307 Alexandra Road
#3-01/02 Mitsubishi Electric Building,
Singapore 159943
Email:
[email protected]
Phone: +65 64 732 308
Fax:
+65 64 738 984
ITALY:
Mitsubishi Electric Europe B.V.
Semiconductor
Centro Direzionale Colleoni,
Palazzo Perseo 2, Via Paracelso
I-20041 Agrate Brianza, Milano, Italy
Email:
[email protected]
Phone: +39-039-6053-10
Fax:
+39-039-6053-212
TAIWAN:
Mitsubishi Electric Taiwan Company, Ltd.,
Semiconductor Department
9F, No. 88, Sec. 6
Chung Shan N. Road
Taipei, Taiwan, R.O.C.
Email:
[email protected]
Phone: +886-2-2836-5288
Fax:
+886-2-2833-9793
U.K.:
Mitsubishi Electric Europe B.V.
Semiconductor
Travellers Lane, Hatfield
Hertfordshire, AL10 8XB, England
Email:
[email protected]
Phone: +44-1707-278-900
Fax:
+44-1707-278-837
U.S.A.:
Mitsubishi Electric & Electronics USA, Inc.
Electronic Device Group
1050 East Arques Avenue
Sunnyvale, CA 94085
Email:
[email protected]
Phone: 408-730-5900
Fax:
408-737-1129
AUSTRALIA:
Mitsubishi Electric Australia,
Semiconductor Division
348 Victoria Road
Rydalmere, NSW 2116
Sydney, Australia
Email: [email protected]
Phone: +61 2 9684-7210
+61 2 9684 7212
+61 2 9684 7214
+61 3 9262 9898
Fax:
+61 2 9684-7208
+61 2 9684 7245
CANADA:
Mitsubishi Electric Sales Canada, Inc.
4299 14th Avenue
Markham, Ontario, Canada L3R OJ2
Phone: 905-475-7728
Fax:
905-475-1918
RA60H4047M1
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