2N4953 E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 30 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.0 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units 2N4953 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N4953 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C =10 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 5.0 ICBO Collector Cutoff Current VCB = 40 V, IE = 0 50 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA 600 0.3 V V ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA IC = 150 mA, IB = 15 mA VBE( sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 1.3 V VBE( on) Base-Emitter On Voltage VCE = 10 V, IC = 150 mA 1.2 V 8.0 pF 75 150 200 SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 1.0 MHz hfe Small-Signal Current Gain ton Turn-On Time I C = 20 mA, VCE = 10 V, f = 100 MHz VCC = 30 V, IC = 150 mA, toff Turn-Off Time I B1 = I B2 = 15 mA *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 2.5 40 ns 400 ns 2N4953 NPN General Purpose Amplifier