TN6719A C TO-226 BE NPN High Voltage Amplifier This device is designed for use in high voltage applications . Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 300 VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units TN6719A 1.0 8.0 125 W mW/°C °C/W 50 °C/W TN6719A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 300 V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, IE = 0 300 V V V(BR)EBO Emitter-Base Breakdown Voltage I E = 1.0 mA, I C = 0 7.0 V ICBO Collector Cutoff Current VCB = 200 V, I E = 0 100 nA IEBO Emitter Cutoff Current VEB = 6.0 V, I C = 0 100 nA 200 0.75 V 0.85 V 3.5 pF ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 30 mA IC = 30 mA, IB = 3.0 mA VBE( on) Base-Emitter On Voltage VCE = 10 V, IC = 30 mA 25 40 40 SMALL SIGNAL CHARACTERISTICS Ccb Collector-Base Capacitance VCB = 20 V, f = 1.0 MHz hfe Small-Signal Current Gain IC = 15 mA, VCE = 100 V, f = 20 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 1.5 15 TN6719A NPN High Voltage Amplifier