ONSEMI NSR0340V2T1G

NSR0340V2T1G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0340V2 in a SOD−523 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
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40 VOLT SCHOTTKY
BARRIER DIODE
Very Low Forward Voltage Drop − 410 mV @ 100 mA
Low Reverse Current − 0.5 mA @ 25 V VR
250 mA of Continuous Forward Current
Power Dissipation of 200 mW with Minimum Trace
Very High Switching Speed
Low Capacitance − CT = 6 pF
This is a Pb−Free Device
1
CATHODE
2
Typical Applications
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•
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LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
1
SOD−523
CASE 502
PLASTIC
MARKING DIAGRAM
Markets
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•
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2
ANODE
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs and PDAs
GPS
1
Symbol
Value
Unit
Reverse Voltage
VR
40
Vdc
Forward Continuous Current (DC)
IF
250
mA
IFSM
1.0
A
Non−Repetitive Peak Forward Surge
Current
ESD Rating: Human Body Model
Machine Model
ESD
Class 2
Class A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2008
October, 2008 − Rev. 0
2
AD = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MAXIMUM RATINGS
Rating
AD M G
G
1
*Date Code orientation position may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSR0340V2T1G
SOD−523*
(Pb−Free)
3000/Tape & Reel
*This package is inherently Pb−Free.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSR0340V2T1/D
NSR0340V2T1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
600
200
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
300
400
°C/W
mW
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature Range
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Reverse Leakage
(VR = 10 V)
(VR = 25 V)
(VR = 40 V)
IR
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
Total Capacitance
(VR = 10 V, f = 1 MHz)
CT
Reverse Recovery Time
(IF = IR = 10 mA, IR = 1.0 mA)
trr
DC Current
Source
+
−
750 mH
50 W Output
Pulse
Generator
0.1 mF
Min
Max
0.2
0.5
1.5
1.0
3.0
6.0
310
410
470
350
450
510
6.0
5.0
0V
IF
Typ
tr
10%
90%
VR
0.1 mF
tp
Pulse Generator
Output
IF
DUT
Adjust for IRM
trr
RL = 50 W
IRM
Current
Transformer
50 W Input
Oscilloscope
1.
2.
3.
4.
5.
iR(REC) = 1 mA
Output Pulse
(IF = IRM = 10 mA; measured
at iR(REC) = 1 mA)
DC Current Source is adjusted for a Forward Current (IF) of 10 mA.
Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.
Pulse Generator transition time << trr.
IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.
tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
Unit
mA
mV
pF
ns
NSR0340V2T1G
100
IR, REVERSE CURRENT (mA)
10000
125°C
10
150°C
1
85°C
0.1
0.01
0
0.1
25°C
0.2
−40°C
0.3
0.4
0.5
0.6
150°C
1000
100
125°C
10
85°C
1
0.1
25°C
0.01
0.001
−40°C
0.0001
0.00001
0
5
10
15
20
25
30
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Leakage Current
30
CT, TOTAL CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1000
TA = 25°C
25
20
15
10
5
0
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
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3
35
40
35
40
NSR0340V2T1G
PACKAGE DIMENSIONS
SOD−523
CASE 502−01
ISSUE C
−X−
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
−Y−
B
1
2
D 2 PL
0.08 (0.003)
M
DIM
A
B
C
D
J
K
S
T X Y
C
J
MILLIMETERS
MIN
NOM
MAX
1.10
1.20
1.30
0.70
0.80
0.90
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
0.15
0.20
0.25
1.50
1.60
1.70
MIN
0.043
0.028
0.020
0.010
0.0028
0.006
0.059
INCHES
NOM
MAX
0.047
0.051
0.032
0.035
0.024
0.028
0.012
0.014
0.0055 0.0079
0.008
0.010
0.063
0.067
−T−
K
SEATING
PLANE
S
SOLDERING FOOTPRINT*
1.40
0.0547
0.40
0.0157
0.40
0.0157
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
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Sales Representative
NSR0340V2T1/D