uClamp3301H Low Voltage μClampTM for ESD and CDE Protection PROTECTION PRODUCTS - MicroClampTM Description Features The μClamp series of Transient Voltage Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The μClampTM3301H is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The μClamp3301H is in a SOD-523 package and will protect one unidirectional line. They give the designer the flexibility to protect one line in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). TM Transient protection for data lines to Mechanical Characteristics EIAJ SOD-523 package Molding compound flammability rating: UL 94V-0 Marking : Marking code, cathode band Packaging: Tape and Reel Lead Finish: Matte tin Applications Dimensions 0.35 IEC 61000-4-2 (ESD) ±20kV (air), ±10kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Cable Discharge Event (CDE) Ultra-small SOD-523 package (1.7 x 0.9 x 0.7mm) Protects one I/O or power line Low clamping voltage Working voltage: 3.3V Low leakage current Solid-state silicon-avalanche technology Cellular Handsets & Accessories Cordless Phones Personal Digital Assistants (PDAs) Notebooks & Handhelds Portable Instrumentation Digital Cameras Peripherals MP3 Players Schematic & PIN Configuration 1.70 1.30 0.9 0.70 Maximum Dimensions (mm) Revision 2/21/2008 SOD-523 (Top View) 1 www.semtech.com uClamp3301H PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20μs) Pp k 40 Watts Maximum Peak Pulse Current (tp = 8/20μs) Ip p 5 Amps ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) V PP +/- 20 +/- 15 kV Lead Soldering Temperature TL 260 (10 sec.) °C Operating Temperature TJ -55 to +125 °C TSTG -55 to +150 °C Storage Temperature Electrical Characteristics (T=25oC) Parameter Reverse Stand-Off Voltage Symbol Conditions Minimum Typical VRWM Punch-Through Voltage V PT IPT = 2μA 3.5 Snap -Back Voltage VSB ISB = 50mA 2.8 Reverse Leakage Current IR VRWM = 3.3V Clamp ing Voltage VC Clamp ing Voltage 3.9 Maximum Units 3.3 V 4.6 V V 0.5 μA IPP = 1A, tp = 8/20μs 5.5 V VC IPP = 5A, tp = 8/20μs 8.0 V Forward Voltage VF IPP = 1A, tp = 8/20μs 2.4 V 30 pF Cj I/O p in to Gnd VR = 0V, f = 1MHz 25 Junction Cap acitance I/O p in to Gnd VR = 3.3V, f = 1MHz 14 © 2008 Semtech Corp. 2 0.05 pF www.semtech.com uClamp3301H PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 110 1 90 % of Rated Power or I PP Peak Pulse Power - P PP (kW) 100 0.1 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0 1000 25 50 75 100 125 150 Ambient Temperature - TA (oC) Pulse Duration - tp (µs) Clamping Voltage vs. Peak Pulse Current Junction Capacitance vs. Reverse Voltage 12 1.2 1 8 Cj(VR) / Cj(VR=0V) Clamping Voltage - VC (V) f = 1 MHz 10 6 4 Waveform Parameters: tr = 8μs td = 20μs 2 0.8 0.6 0.4 0.2 0 0 1 2 3 4 0 5 0 Peak Pulse Current - IPP (A) Insertion Loss S21 CH1 S21 LOG START . 030 MHz © 2008 Semtech Corp. 0.5 1 1.5 2 2.5 Reverse Voltage - VR (V) 3 3.5 ESD Clamping (8kV Contact per IEC 61000-4-2) 6 dB / REF 0 dB STOP 3000. 000000 MHz Note: Data is taken with a 10x attenuator 3 www.semtech.com uClamp3301H PROTECTION PRODUCTS Applications Information Device Schematic & Pin Configuration Device Connection Options The μClamp3301H is designed to protect one I/O, or power supply line. It will present a high impedance to the protected line up to 3.3 volts. It will “turn on” when the line voltage exceeds 3.5 volts. The device is unidirectional and may be used on lines where the signal polarity is above ground. The cathode band should be placed towards the line that is to be protected. Due to the “snap-back” characteristics of the low voltage TVS, it is not recommended that the I/O line be directly connected to a DC source greater than snapback votlage (VSB) as the device can latch on as described below. EPD TVS Characteristics EPD TVS IV Characteristic Curve The μClamp3301H is constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the μClamp3301H can effectively operate at 3.3V while maintaining excellent electrical characteristics. IPP ISB IPT VF IR VRWM VSB VPT VC The EPD TVS employs a complex nppn structure in I contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, current (ISB). To return to a non-conducting state, the but must be considered in applications where DC current through the device must fall below the ISB voltages are present. (approximately <50mA) and the voltage must fall below the VSB (normally 2.8 volts for a 3.3V device). If a 3.3V When the TVS is conducting current, it will exhibit a TVS is connected to 3.3V DC source, it will never fall slight “snap-back” or negative resistance characterisbelow the snap-back voltage of 2.8V and will therefore tics due to its structures. This point is defined on the stay in a conducting state. curve by the snap-back voltage (VSB) and snap-back F © 2008 Semtech Corp. 4 www.semtech.com uClamp3301H PROTECTION PRODUCTS Outline Drawing - SOD-523 E E1 B DIM A b c D E E1 L L1 aaa D 2X b aaa C A B DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .019 .009 .003 .027 .059 .043 .003 .003 .023 .031 .063 .047 .008 .005 .008 .027 .013 .008 .035 .067 .051 .011 .008 0.50 0.25 0.10 0.70 1.50 1.10 0.10 0.10 0.60 0.70 0.35 0.20 0.80 0.90 1.60 1.70 1.20 1.30 0.20 0.30 0.15 0.20 0.20 A A c SEATING PLANE L C L1 NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Land Pattern - SOD-523 Y DIM X C G X Y Z G C Z DIMENSIONS INCHES MILLIMETERS (.057) .024 .018 .033 .090 (1.45) 0.60 0.45 0.85 2.30 NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET © 2008 Semtech Corp. 5 www.semtech.com uClamp3301H PROTECTION PRODUCTS Marking Code Ordering Information 3H Part Number Working Voltage uClamp 3301H.TCT 3.3V Device Qty per Marking Reel 3H 3,000 Reel Size 7 Inch MicroClamp, uClamp and μClamp are trademarks of Semtech Corporation Tape and Reel Specification Tape Specifications Device Orientation in Tape © 2008 Semtech Corp. 6 www.semtech.com uClamp3301H PROTECTION PRODUCTS Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 © 2008 Semtech Corp. 7 www.semtech.com