HD1530JL High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display PRELIMINARY DATA Figure 1. Features ■ STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 ■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS ■ LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION Package 3 Applications ■ 2 HORIZONTAL DEFLECTION OUTPUT FOR DIGITAL TV, HDTV, AND HIGH -END MONITORS 1 TO-264 Description The device uses a Diffused Collector in Planar technology which adopts ”Enhanced High Voltage Structure” (EHVS1) that was developed to fit High-Definition CRT displays. Figure 2. Internal Schematic Diagram The new HD product series features improved silicon efficiency, bringing updated performance to Horizontal Deflection output stages. Table 1. Order Codes Part Number Marking Package Packing HD1530JL HD1530JL TO-264 TUBE July 2005 rev.1 1/5 www.st.com 5 HD1530JL Table 2. Absolute Maximum Rating Symbol Parameter Unit VCES Collector-Emitter Voltage (VBE = 0) 1500 V VCEO Collector-Emitter Voltage (IB = 0) 700 V VEBO Emitte-Base Voltage (IC = 0) 10 V Collector Current 26 A Collector Peak Current (tP < 5ms) 40 A Base Current 10 A 20 A IC ICM IB IBM Base Peak Current (tP < 5ms) PTOT Total dissipation at Tc = 25°C TSTG Storage Temperature TJ Table 3. Max. Operating Junction Temperature RthJC Table 4. Symbol ICES IEBO Parameter Thermal Resistance Junction-Case____________________Max Parameter Collector Cut-off Current (VBE = 0) Emitter Cut-off Current (IC = 0) Emitter-Base Voltage (IC = 0) Test Conditions 700 IE = 10mA 10 Base-Emitter Saturation Voltage Note: 1 hFE DC Current Gain IC = 13A _____ IB = 3.25A tf ts tf Value Unit 0.625 °C/W Typ. Max. Unit 0.2 2 mA mA 10 μA V V 1 2.5 V 1.5 V 28 IC = 1A _____ VCE = 5V IC = 13A ____ VCE = 5V INDUCTIVE LOAD Storage Time Fall Time Min. IC = 10mA Note: 1 VBE(sat) ts °C VCE = 1500V____TC = 125°C VEB = 5V Collector-Emitter Saturation Voltage IC = 13A _____ IB = 3.25A tf 150 VCE = 1500V VCE(sat) ts W °C Electrical Characteristics (TCASE = 25°C; unless otherwise specified) VCEO(SUS) Collector-Emitter Note: 1 Susting Voltage (IB = 0) VEBO 200 -65 to 150 Thermal Data Symbol 5 8 IC = 12A ____ _ fh = 32KHz IB(on) = 1.5A ___ IB(off) = -6.1A INDUCTIVE LOAD Storage Time Fall Time IC = 12A _____ fh = 48KHz IB(on) = 2A ____ IB(off) = -6.7A INDUCTIVE LOAD Storage Time Fall Time IC = 6.5A _____ fh = 100KHz IB(on) = 0.9A ___ IB(off) = -4.6A Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%. 2/5 Value 3.3 240 μs ns 2.8 200 μs ns 1.5 110 μs ns HD1530JL Table 5. TO-264 Mechanical Data Figure 3. TO-264 Drawing 3/5 HD1530JL Table 6. 4/5 Revision History Date Revision 05-July-2005 1 Changes Initial release. HD1530JL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 5/5