ST2001FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOR TVS OVER 21 INCHES AND 15 INCHES MONITORS ISOWATT218FX DESCRIPTION The d e vice is m an u fa ctu r ed u sin g Diff us ed Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 1500 V VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) 600 V VEBO Emitter-Base Voltage (IC = 0) 7 V Collector Current 10 A Collector Peak Current (tp < 5 ms) 20 A Base Current 7 A IC ICM IB Ptot Total Dissipation at Tc = 25 °C Vins Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Tstg Storage Temperature Tj October 2003 Max. Operating Junction Temperature 63 W 2500 V –65 to 150 °C 150 °C 1/7 ST2001FX THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2 °C/W ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 1 2 mA mA 1 mA Collector Cut-off Current (VBE = 0) VCE = 1500 V VCE = 1500 V Emitter Cut-off Current (IC = 0) VEB = 7 V VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA VCE(sat)* Collector-Emitter Saturation Voltage IC = 5 A IB = 1.25 A 1.5 V VBE(sat)* Base-Emitter Saturation Voltage IC = 5 A IB = 1.25 A 1.2 V DC Current Gain IC = 6 A IC = 6 A VCE = 1 V VCE = 5 V IC = 5 A IBon (END) = 850 mA LBB(off) = 2 µH VBB(off) = -2.5 V fh = 64 KHz (See Figure 1) ICES IEBO hFE* ts tf INDUCTIVE LOAD Storage Time Fall Time * Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %. 2/7 Tj = 125 °C 600 V 4.5 5 9 2.6 0.2 3 0.4 µs µs ST2001FX Safe Operating Area Derating Curve Thermal Impedance Output Characteristics Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 ST2001FX DC Current Gain DC Current Gain Power Losses Inductive Load Switchin Times Reverse Biased Safe Operating Area 4/7 ST2001FX Figure 1: Inductive Load Switching Test Circuit 5/7 ST2001FX ISOWATT218FX MECHANICAL DATA DIM. mm. MIN. TYP. inch MAX. MIN. A 5.30 5.70 0.209 TYP. 0.224 C 2.80 3.20 0.110 0.126 D 3.10 3.50 0.122 0.138 D1 1.80 2.20 0.071 0.087 E 0.80 1.10 0.031 0.043 F 0.65 0.95 0.026 0.037 F2 1.80 2.20 0.071 0.087 G 10.30 11.50 0.406 0.453 G1 5.45 0.215 H 15.30 15.70 0.602 0.618 L 9.80 10.20 0.386 0.402 L2 22.80 23.20 0.898 0.913 L3 26.30 26.70 1.035 1.051 L4 43.20 44.40 1.701 1.748 L5 4.30 4.70 0.169 0.185 L6 24.30 24.70 0.957 0.972 L7 14.60 15.00 0.575 0.591 N 1.80 2.20 0.071 0.087 R 3.80 4.20 0.150 0.165 DIA 3.40 3.80 0.134 0.150 - Weight : 5.6 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.55 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 mm 6/7 MAX. ST2001FX Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 7/7