STMICROELECTRONICS STP7N52K3

STB7N52K3, STD7N52K3
STF7N52K3, STP7N52K3
N-channel 525 V, 0.84 Ω, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220
SuperMESH3™ Power MOSFET
Features
Type
VDSS
STB7N52K3
STD7N52K3
STF7N52K3
STP7N52K3
525 V
525 V
525 V
525 V
RDS(on)
max
< 0.98 Ω
< 0.98 Ω
< 0.98 Ω
< 0.98 Ω
ID
Pw
3
3
1
90 W
90 W
25 W
90 W
6.2 A
6.2 A
6.2 A (1)
6.2 A
1
DPAK
D²PAK
1. Limited by package
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Improved diode reverse recovery
characteristics
■
Zener-protected
3
3
1
1
2
TO-220FP
TO-220
Figure 1.
2
Internal schematic diagram
D(2)
Application
■
Switching applications
G(1)
Description
SuperMESH3™ is a new Power MOSFET
technology that is obtained via improvements
applied to STMicroelectronics’ SuperMESH™
technology combined with a new optimized
vertical structure. The resulting product has an
extremely low on resistance, superior dynamic
performance and high avalanche capability,
making it especially suitable for the most
demanding applications.
Table 1.
S(3)
AM01476v1
Device summary
Order codes
Marking
Package
Packaging
STB7N52K3
7N52K3
D²PAK
Tape and reel
STD7N52K3
7N52K3
DPAK
Tape and reel
STF7N52K3
7N52K3
TO-220FP
Tube
STP7N52K3
7N52K3
TO-220
Tube
September 2009
Doc ID 14896 Rev 2
1/18
www.st.com
18
Contents
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
.......................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
.............................................. 9
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220 DPAK D²PAK TO-220FP
VDS
Drain-source voltage (VGS = 0)
525
V
VGS
Gate- source voltage
± 30
V
ID
ID
IDM
(2)
PTOT
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
6.2
6.2 (1)
A
4.5
(1)
A
4.5
24.8
Total dissipation at TC = 25 °C
24.8
90
(1)
25
A
W
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
6.2
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
100
mJ
VESD(G-S)
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
2500
V
dv/dt (3)
Peak diode recovery voltage slope
12
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
2500
V
-55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS.
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220 DPAK D²PAK TO-220FP
Rthj-case
Thermal resistance junction-case max
1.39
Rthj-pcb
Thermal resistance junction-pcb max
50
Rthj-amb
Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
Doc ID 14896 Rev 2
5
30
62.5
°C/W
62.5
300
°C/W
°C/W
°C
3/18
Electrical characteristics
2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
VDS = Max rating
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 50 µA
RDS(on
Static drain-source on
resistance
Symbol
Ciss
Coss
Crss
Typ.
Max.
Unit
525
V
1
50
µA
µA
± 10
µA
3.75
4.5
V
0.84
0.98
Ω
Min.
Typ.
Max.
Unit
-
737
110
10
-
pF
pF
pF
-
198
-
pF
-
126
-
pF
-
4
-
Ω
-
34
4.4
15
-
nC
nC
nC
VGS = ± 20 V
VGS(th)
Table 5.
Min.
3
VGS = 10 V, ID = 3.1 A
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Co(tr)(1)
Equivalent
capacitance time
related
Co(er)(2)
Equivalent
capacitance energy
related
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0
VDS = 0 to 520 V, VGS = 0
RG
Intrinsic gate
resistance
f = 1 MHz open drain
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 420 V, ID = 6 A,
VGS = 10 V
(see Figure 20)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/18
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Table 6.
Symbol
td(on)
tr
td(off)
tf
Table 7.
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 260 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Min.
Typ.
-
11
22
30
22
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Electrical characteristics
Test conditions
Max. Unit
-
6.2
24.8
A
A
ISD = 6 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 24)
-
260
1
11
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 24)
-
338
1.4
13
ns
nC
A
Min.
Typ.
30
-
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
BVGSO(1)
Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
Max. Unit
-
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
Doc ID 14896 Rev 2
5/18
Electrical characteristics
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK
Figure 3.
Thermal impedance for TO-220,
D²PAK
Figure 5.
Thermal impedance for DPAK
Figure 7.
Thermal impedance for TO-220FP
AM04999v1
ID
(A)
Tj=150°C
Tc=25°C
Sinlge pulse
10
)
on
DS
(
Op
Lim era
ite tion
d
by in th
m is
ax ar
R e
a
is
10µs
1
100µs
1ms
10ms
0.1
0.1
10
1
Figure 4.
100
VDS(V)
Safe operating area for DPAK
AM04997v1
ID
(A)
Tj=150°C
Tc=25°C
Sinlge pulse
10µs
n)
(o
DS
Op
Lim era
ite tion
d
by in th
m is
ax ar
R ea
is
10
1
100µs
1ms
10ms
0.1
0.1
10
1
Figure 6.
100
VDS(V)
Safe operating area for TO-220FP
AM04998v1
ID
(A)
Tj=150°C
Tc=25°C
Sinlge pulse
)
S(
on
pe
ra
ite tio
d ni
by n
m this
ax a
R rea
is
10
D
10µs
100µs
Li
O
1ms
m
1
10ms
0.1
0.01
0.1
6/18
1
10
100
VDS(V)
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Figure 8.
Output characteristics
Figure 9.
AM05000v1
ID
(A)
Electrical characteristics
VGS=10V
5
Transfer characteristics
AM05401v1
ID
(A)
8
7
6
4
5
3
4
6V
2
3
2
1
1
5V
0
0
4
2
0
0
VDS(V)
Figure 10. Normalized BVDSS vs temperature
AM05402v1
BVDSS
(norm)
2
8
6
VGS(V)
Figure 11. Static drain-source on resistance
AM05403v1
RDS(on)
(Ω)
ID=3.1A
VGS=10V
0.95
1.10
4
0.90
1.05
0.85
1.00
0.80
0.95
0.75
0.90
-50 -25 0
25 50 75 100 125 150 TJ(°C)
Figure 12. Output capacitance stored energy
AM05405v1
Eoss
(µJ)
0.70
0
1
2
3
4
5
6
ID(A)
Figure 13. Capacitance variations
AM05404v1
C
(pF)
4.0
1000
3.5
Ciss
3.0
2.5
100
Coss
2.0
1.5
Crss
10
1.0
0.5
0
0
100
200
300
400
500 VDS(V)
Doc ID 14896 Rev 2
1
0.1
1
10
100
VDS(V)
7/18
Electrical characteristics
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs
temperature
AM05406v1
VGS
(V)
VDS
12
VGS
VDD=420V
AM05408v1
RDS(on)
(norm)
400
2.5
ID=6A
350
10
300
8
2.0
250
200
6
150
1.5
1.0
4
100
2
50
0
0
5
10
15
20
25
0
Qg(nC)
35
30
Figure 16. Normalized gate threshold voltage
vs temperature
AM05407v1
VGS(th)
(norm)
1.10
0.5
0.0
-50 -25 0 25 50 75 100 125 150 TJ(°C)
Figure 17. Maximum avalanche energy vs
temperature
AM05409v1
EAS
(mJ)
ID=6.2 A
VDD=50 V
100
90
80
1.00
70
60
0.90
50
40
30
0.80
20
0.70
-50 -25 0 25 50 75 100 125 150 TJ(°C)
Figure 18. Source-drain diode forward
characteristics
AM05410v1
VSD
(V)
TJ=-50°C
0.9
0.8
TJ=25°C
0.7
0.6
0.5
TJ=150°C
0.4
0.3
0
8/18
1
2
3
4
5
6
7
8
ISD(A)
Doc ID 14896 Rev 2
10
0
0
20
40
60
80
100 120 140 TJ(°C)
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
3
Test circuits
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
Figure 22. Unclamped Inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 23. Unclamped inductive waveform
AM01471v1
Figure 24. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 14896 Rev 2
10%
AM01473v1
9/18
Package mechanical data
4
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/18
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Doc ID 14896 Rev 2
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
11/18
Package mechanical data
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
TO-220FP mechanical data
mm.
Dim.
Min.
A
4.40
inch
Typ
Max.
Min.
4.60
0.173
Typ.
0.181
Max.
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.017
0.027
F
0.75
1.00
0.030
0.039
F1
1.15
1.50
0.045
0.067
F2
1.15
1.50
0.045
0.067
G
4.95
5.20
0.195
0.204
G1
2.40
2.70
0.094
0.106
H
10
10.40
0.393
L2
16
0.409
0.630
28.6
30.6
1.126
L4
9.80
10.60
0.385
1.204
0.417
L5
2.9
3.6
0.114
0.141
L6
15.90
16.40
0.626
0.645
L7
9
9.30
0.354
0.366
Dia
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
Dia
F
F1
L7
L2
L5
1 2 3
L4
7012510-I
12/18
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Package mechanical data
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
Max
Min
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
2.54
4.88
15
2.49
2.29
1.27
1.30
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.1
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.051
8°
0°
0.4
0°
Typ
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
0079457_M
Doc ID 14896 Rev 2
13/18
Package mechanical data
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
1
R
V2
0.20
8o
0o
0068772_G
14/18
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
5
Package mechanical data
Package mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
1.5
D1
1.5
E
1.65
MIN.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
40
15.7
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059
F
R
MIN.
MAX.
K0
W
inch
MAX.
1.574
16.3
0.618
0.641
Doc ID 14896 Rev 2
15/18
Package mechanical data
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
MAX.
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
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Doc ID 14896 Rev 2
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
6
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
07-Jul-2008
1
First release
10-Sep-2009
2
Document status promoted from preliminary data to datasheet.
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STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
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