MCP1710 Ultra-Low Quiescent Current LDO Regulator Features Description • Ultra-Low 20 nA (typical) Quiescent Current • Ultra-Low Shutdown Supply Current: 0.1 nA (typical) • 200 mA Output Current Capability for VOUT < 3.5V • 100 mA Output Current Capability for VOUT > 3.5V • Input Operating Voltage Range: 2.7V to 5.5V • Standard Output Voltages: - 1.2V, 1.8V, 2.5V, 3.3V, 4.2V • Low-Dropout Voltage: 450 mV Maximum at 200 mA • Stable with 1.0 µF Ceramic Output Capacitor • Overcurrent Protection • Space Saving, 8-Lead Plastic 2 x 2 VDFN-8 The MCP1710 is a 200 mA for VOUT < 3.5V, 100 mA for VOUT > 3.5V, low dropout (LDO) linear regulator that provides high-current and low-output voltages, while maintaining an ultra-low 20 nA of quiescent current during device operation. In addition, the MCP1710 can be shut down for an even lower 0.1 nA (typical) supply current draw. The MCP1710 comes in five standard fixed output voltage versions: 1.2V, 1.8V, 2.5V, 3.3V and 4.2V. The 200 mA output current capability, combined with the low output-voltage capability, make the MCP1710 a good choice for new ultra-long-life LDO applications that have high current demands, but require ultra-low power consumption during sleep states. Applications • • • • • Energy harvesting Long-life battery powered applications Smart cards Ultra-Low consumption “Green” products Portable electronics The MCP1710 is stable using ceramic output capacitors that inherently provide lower output noise and reduce the size and cost of the entire regulator solution. Only 1 µF (2.2 µF recommended) of output capacitance is needed to stabilize the LDO. The MCP1710’s ultra-low quiescent and shutdown current allows it to be paired with other ultra-low current draw devices, such as Microchip’s nanoWatt XLP technology devices, for a complete ultra-low power solution. Package Type MCP1710 2 x 2 DFN* GND 1 VOUT 2 GND 3 GND 4 8 SHDN EP 9 7 VIN 6 FB 5 GND * Includes Exposed Thermal Pad (EP); see Table 3-1. 2012 Microchip Technology Inc. DS25158A-page 1 MCP1710 Typical Application VIN CIN COUT LOAD + - VOUT FB SHDN GND Functional Block Diagram VIN VOUT Overcurrent Voltage Reference + - SHDN FB SHDN GND DS25158A-page 2 2012 Microchip Technology Inc. MCP1710 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † Input Voltage, VIN .............................................................6.0V Maximum Voltage on Any Pin ............... (GND – 0.3V) to 6.0V Output Short Circuit Duration ....... ............................Unlimited Storage temperature .................................... -65°C to +150°C Maximum Junction Temperature, TJ ........................... +150°C Operating Junction Temperature, TJ ...............-40°C to +85°C ESD protection on all pins 2 kV HBM AC/DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, VIN = VR + 800 mV, V IN(min) = VR + 0.3V, VIN(max) = 5.5V, Note 1, IOUT = 1 mA, CIN = COUT = 2.2 µF (X7R Ceramic), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 4) of -40°C to +85°C Parameters Input Operating Voltage Sym Min Typ Max Units VIN 2.7 — 5.5 V Conditions VOUT 1.2 — 4.2 V Input Quiescent Current Iq — 20 — nA VIN = VR + 0.8V to 5.5V, IOUT = 0 Input Quiescent Current for SHDN Mode ISHDN — 0.1 — nA SHDN = GND Maximum Continuous Output Current IOUT 200 — — mA VIN = VR + 0.8V to 5.5V 1.2V VR 3.5V 100 — — mA VIN = VR + 0.8V to 5.5V 3.5V VR 5.5V — 250 — mA VOUT = 0.9 x VR 1.2V VR 3.5V — 175 — mA VOUT = 0.9 x VR 3.5V VR 5.5V VR – 4% — VR + 4% V VR < 1.8V (Note 2) VR – 2% — VR + 4% V 1.8V < VR < 5.5V (Note 2) -2 0.5 2 %/V (Note 1) VIN 5V VR < 1.8V, IOUT = 50 mA -1 — 1 %/V (Note 1) VIN 5V VR = 1.8V to 4.2V IOUT = 50 mA -2 1 2 % VIN = to 5.5V, 1.2V < VR < 3.5V IOUT = 1 mA to 200 mA, -2 1 2 % 3.5V < VR < 5.5V IOUT = 1 mA to 100 mA, Output Voltage Range Current Limit Output Voltage Regulation Line Regulation Load Regulation Note 1: 2: 3: 4: IOUT VOUT VOUT/ (VOUT x VIN) VOUT/VOUT The minimum VIN must meet two conditions: VIN 2.7V and VIN VR VDROPOUT(MAX). VR is the nominal regulator output voltage. VR = 1.2V, 2.5V, etc. Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 3% below its nominal value that was measured with an input voltage of VIN = VOUT(MAX) + VDROPOUT(MAX). The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. 2012 Microchip Technology Inc. DS25158A-page 3 MCP1710 AC/DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VIN = VR + 800 mV, V IN(min) = VR + 0.3V, VIN(max) = 5.5V, Note 1, IOUT = 1 mA, CIN = COUT = 2.2 µF (X7R Ceramic), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 4) of -40°C to +85°C Parameters Dropout Voltage Sym Min Typ Max Units Conditions VDROPOUT — — 450 mV IOUT = 200 mA 1.2V VR 3.5V, Note 3 — — 400 mV Iout = 100mA 3.5V VR 5.5V, Note 3 Shutdown Input Logic High Input VSHDN-HIGH 70 — — %VIN VIN = 2.7V to 5.5V Logic Low Input VSHDN-LOW — — 30 %VIN VIN = 2.7V to 5.5V TOR — 30 — ms eN — 0.37 — PSRR — 22 — AC Performance Output Delay From SHDN Output Noise Power Supply Ripple Rejection Ratio Note 1: 2: 3: 4: SHDN = GND to VIN, VOUT = GND to 95% VR µV/Hz IOUT = 50 mA, f = 1 kHz, COUT = 2.2 µF (X7R Ceramic) VOUT = 2.5V dB f = 100 Hz, IOUT = 10 mA, VINAC = 200 mV pk-pk, CIN = 0 µF The minimum VIN must meet two conditions: VIN 2.7V and VIN VR VDROPOUT(MAX). VR is the nominal regulator output voltage. VR = 1.2V, 2.5V, etc. Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 3% below its nominal value that was measured with an input voltage of VIN = VOUT(MAX) + VDROPOUT(MAX). The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise noted, VIN = VR + 800 mV, V IN(min) = VR + 0.3V, VIN(max) = 5.5V, Note 1, IOUT = 1 mA, CIN = COUT = 2.2 µF (X7R Ceramic), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 4) of -40°C to +85°C Parameters Sym Min Typ Max Units Conditions Operating Junction Temperature Range TJ -40 — +85 °C Steady State Maximum Junction Temperature TJ — — +150 °C Transient Storage Temperature Range TA -65 — +150 °C JA — 73.1 — °C/W JC — 10.7 — °C/W Temperature Ranges Thermal Package Resistances Thermal Resistance, 2 x 2 VDFN-8 DS25158A-page 4 FR4 Board Only 1 oz. Copper JEDEC Standard Board with Thermal Vias 2012 Microchip Technology Inc. MCP1710 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, COUT = 2.2 µF Ceramic (X7R), CIN = 2.2 µF Ceramic (X7R), IOUT = 1 mA, Temperature = +25°C, VIN = VOUT + 0.8V, SHDN = 1 M pullup to VIN. 1.240 1.205 IOUT = 0.1 mA VIN = 2.5V TJ = -40°C 1.200 1.230 Outtput Voltage (V) Outtput Voltage (V) 1.235 1.225 TJ = +25°C 1.220 1.215 1.210 1.205 TJ = +85°C 1.200 TJ = +85°C 1.185 1 180 1.180 TJ = -40°C 1.170 2.5 3.0 3.5 4.0 4.5 Input Voltage (V) 5.0 5.5 FIGURE 2-1: Output Voltage vs. Input Voltage (VR = 1.2V). 0 50 100 150 Load Current (mA) 200 FIGURE 2-4: Output Voltage vs. Load Current (VR = 1.2V). 2.5025 2.510 IOUT = 0.1 mA Ou utput Voltage (V) Outtput Voltage (V) 1.190 1.175 1.195 2.508 TJ = +25°C 1.195 TJ = +25°C 2.506 2.504 2.502 TJ = -40°C 2.500 TJ = +85°C 2.498 TJ = +85°C 2.5000 VIN = 3.3V 2.4975 TJ = +25°C TJ = -40°C 2.4950 2.4925 2.496 2.4900 2.494 2.5 3.0 3.5 4.0 4.5 Input Voltage (V) 5.0 0 5.5 FIGURE 2-2: Output Voltage vs. Input Voltage (VR = 2.5V). 80 100 4.25 IOUT = 0.1 mA TJ = -40°C 4.244 4.240 TJ = +25°C TJ = +85°C 85°C 4.236 4.232 4.50 Ou utput Voltage (V) Ou utput Voltage (V) 40 60 Load Current (mA) FIGURE 2-5: Output Voltage vs. Load Current (VR = 2.5V). 4.252 4.248 20 VIN = 4.15V 4.24 4.23 TJ = +25°C 4.22 TJ = -40°C TJ = +85°C 4.21 4.20 4.19 4.75 5.00 5.25 Input Voltage (V) 5.50 FIGURE 2-3: Output Voltage vs. Input Voltage (VR = 4.2V). 2012 Microchip Technology Inc. 0 20 40 60 Load Current (mA) 80 100 FIGURE 2-6: Output Voltage vs. Load Current (VR = 4.2V). DS25158A-page 5 MCP1710 Note: Unless otherwise indicated, COUT = 2.2 µF Ceramic (X7R), CIN = 2.2 µF Ceramic (X7R), IOUT = 1 mA, Temperature = +25°C, VIN = VOUT + 0.8V, SHDN = 1 M pullup to VIN. VOUT = 2.5V 0.25 0.20 TJ = +85°C 0.15 TJ = +25°C TJ = -40°C 0.10 0 05 0.05 0.00 -0.05 0 20 40 60 Load Current (mA) 80 100 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0 06 0.06 0.04 0.02 0.00 VOUT = 4.2V TJ = -40°C TJ = +85°C TJ = +25°C 0 20 40 60 Load Current (mA) 80 100 FIGURE 2-8: Dropout Voltage vs. Load Current (VR = 4.2V). VIN = 5.2V VOUT = 4.2V IOUT = 50 mA 0.1 VIN = 2.8V VOUT = 1.8V IOUT = 50 mA VIN = 3.5V VOUT = 2.5V IOUT = 50 mA 0.0 0.01 0.1 1 10 100 Frequency (kHz) FIGURE 2-9: DS25158A-page 6 100 1000 FIGURE 2-10: Power Supply Ripple Rejection vs. Frequency (VR = 1.2V). 10 VIN = 3.5V 0 IOUT = 10 mA -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 0.01 0.1 Noise vs. Frequency. 1 10 Frequency (kHz) 100 1000 FIGURE 2-11: Power Supply Ripple Rejection vs. Frequency (VR = 2.5V). 10 0 VIN = 5.2V IOUT = 10 mA -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 0.01 0.1 PSRR (dB) Outpu ut Noise (μV/Hz) 10 1 1 10 Frequency (kHz) PSRR (dB) Dro opout Voltage (V) FIGURE 2-7: Dropout Voltage vs. Load Current (VR = 2.5V). 10 VIN = 2.5V 0 IOUT = 10 mA -10 -20 -30 -40 -50 -60 60 -70 -80 -90 -100 0.01 0.1 PSRR (dB) Dro opout Voltage (V) 0.30 1000 1 10 Frequency (kHz) 100 1000 FIGURE 2-12: Power Supply Ripple Rejection vs. Frequency (VR = 4.2V). 2012 Microchip Technology Inc. MCP1710 Note: Unless otherwise indicated, COUT = 2.2 µF Ceramic (X7R), CIN = 2.2 µF Ceramic (X7R), IOUT = 1 mA, Temperature = +25°C, VIN = VOUT + 0.8V, SHDN = 1 M pullup to VIN. IOUT = 10 mA VOUT = 1.2V VIN = 2.5V to 3.5V IOUT = 100 nA to 10 mA VOUT = 1.2V AC1M 200 mV/div FIGURE 2-13: (VR = 1.2V). 10 mA/div Dynamic Load Step 2 V/div FIGURE 2-16: (VR = 1.2V). 1 V/div Dynamic Line Step IOUT = 10 mA VOUT = 2.5V VIN = 3.5V to 4.5V VOUT = 2.5V IOUT = 100 nA to 10 mA AC1M 200 mV/div FIGURE 2-14: (VR = 2.5V). 10 mA/div Dynamic Load Step 2 V/div FIGURE 2-17: (VR = 2.5V). 1 V/div Dynamic Line Step IOUT = 10 mA VOUT = 4.2V VN = 4.5V to 5.5V IOUT = 100 nA to 10 mA AC1M 200 mV/div FIGURE 2-15: (VR = 4.2V). 10 mA/div Dynamic Load Step 2012 Microchip Technology Inc. VOUT = 4.2V 2 V/div FIGURE 2-18: (VR = 4.2V). 1 V/div Dynamic Line Step DS25158A-page 7 MCP1710 Note: Unless otherwise indicated, COUT = 2.2 µF Ceramic (X7R), CIN = 2.2 µF Ceramic (X7R), IOUT = 1 mA, Temperature = +25°C, VIN = VOUT + 0.8V, SHDN = 1 M pullup to VIN. IOUT = 10 mA IOUT = 100 nA SHDN Signal VIN = 2.5V VOUT = 1.2V VOUT = 1.2V 2 V/div FIGURE 2-19: (VR = 1.2V). 2 V/div 2 V/div Startup From VIN FIGURE 2-22: (VR = 1.2V). IOUT = 100 nA 1 V/div Startup From SHDN IOUT = 10 mA SHDN Signal VIN = 3.5V VOUT = 2.5V VOUT = 2.5V 2 V/div FIGURE 2-20: (VR = 2.5V). 2 V/div Startup From VIN 2 V/div FIGURE 2-23: (VR = 2.5V). IOUT = 100 nA 1 V/div Startup From SHDN IOUT = 10 mA VIN = 5.2V SHDN Signal VOUT = 4.2V VOUT = 4.2V 2 V/div FIGURE 2-21: (VR = 4.2V). DS25158A-page 8 2 V/div Startup From VIN 2 V/div FIGURE 2-24: (VR = 4.2V). 1 V/div Startup From SHDN 2012 Microchip Technology Inc. MCP1710 Note: Unless otherwise indicated, COUT = 2.2 µF Ceramic (X7R), CIN = 2.2 µF Ceramic (X7R), IOUT = 1 mA, Temperature = +25°C, VIN = VOUT + 0.8V, SHDN = 1 M pullup to VIN. 0.05 2.00 IOUT = 0 mA to 100 mA Load d Regulation (%) Loa ad Regulation (%) IOUT = 0 mA to 100 mA 1.50 VIN = 2.5V 1.00 VIN = 4.0V 0.50 VIN = 5.5V 5 5V 0.00 -0.50 0.04 VIN = 5.5V 0.03 VIN = 5.0V 0.02 VIN = 4.5V 0.01 0.00 -0.01 -40 -15 10 35 60 85 -40 -15 10 35 60 Junction Temperature (°C) Junction Temperature (°C) FIGURE 2-25: Load Regulation vs. Junction Temperature (VR = 1.2V). FIGURE 2-27: Load Regulation vs. Junction Temperature (VR = 4.2V). 0.30 0.50 IOUT = 1 mA IOUT = 0 mA to 100 mA 0.20 0.45 0.10 Line Regulation (%) Load d Regulation (%) 85 VIN = 2.8V 0.00 -0.10 VIN = 4.0V 0 20 -0.20 VIN = 5.5V -0.30 VR = 1.2V 0.40 0.35 VR = 2.5V 0.30 0.25 VR = 4.2V 0.20 -0.40 0.15 -40 -15 10 35 60 85 -40 Junction Temperature (°C) FIGURE 2-26: Load Regulation vs. Junction Temperature (VR = 2.5V). 2012 Microchip Technology Inc. FIGURE 2-28: Temperature. -15 10 35 60 Junction Temperature (°C) 85 Line Regulation vs. Junction DS25158A-page 9 MCP1710 160 50 45 40 35 30 25 20 15 10 5 0 VOUT = 1.2V VIN = 4.0V VOUT = 1.2V 140 Grou und Current (µA) Quiesc cent Current (nA) Note: Unless otherwise indicated, COUT = 2.2 µF Ceramic (X7R), CIN = 2.2 µF Ceramic (X7R), IOUT = 1 mA, Temperature = +25°C, VIN = VOUT + 0.8V, SHDN = 1 M pullup to VIN. TJ = +85°C TJ = -40°C TJ = +25°C 2.5 3 3.5 TJ = +25°C 120 100 TJ = +85°C 80 TJ = -40°C 60 40 20 4 4.5 5 5.5 0 0 Input Voltage (V) FIGURE 2-29: Voltage. Gro ound Current (µA) 0.95 Quiescent Current vs. Input FIGURE 2-31: Current. 20 40 60 Load Current (mA) 80 100 Ground Current vs. Load VIN = 2.5V VOUT = 1.2V IOUT = 0.1mA 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 -50 -25 FIGURE 2-30: Temperature. DS25158A-page 10 0 25 50 75 Junction Temperature (°C) 100 Ground Current vs. Junction 2012 Microchip Technology Inc. MCP1710 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: 3.1 PIN FUNCTION TABLE MCP1710 VDFN Name 1, 3, 4, 5, GND Ground Regulated Output Voltage Description 2 VOUT 6 FB Output Voltage Feedback Input 7 VIN Input Voltage Supply 8 SHDN 9 EP Shutdown Control Input (active-low) Exposed Pad, connected to GND. Ground Pin (GND) 3.4 Input Voltage Supply Pin (VIN) For optimal Noise and Power Supply Rejection Ratio (PSRR) performance, the GND pin of the LDO should be tied to an electrically quiet circuit ground. This will help the LDO power supply rejection ratio and noise performance. The ground pin of the LDO only conducts the ground current, so a heavy trace is not required. For applications that have switching or noisy inputs, tie the GND pin to the return of the output capacitor. Ground planes help lower the inductance and voltage spikes caused by fast transient load currents. Connect the unregulated or regulated input voltage source to VIN. If the input voltage source is located several inches away from the LDO, or the input source is a battery, it is recommended that an input capacitor be used. A typical input capacitance value of 1 µF to 10 µF should be sufficient for most applications (2.2 µF, typical). The type of capacitor used can be ceramic, tantalum, or aluminum electrolytic. The low ESR characteristics of the ceramic capacitor will yield better noise and PSRR performance at high frequency. 3.2 3.5 Regulated Output Voltage Pin (VOUT) The VOUT pin is the regulated output voltage of the LDO. A minimum output capacitance of 1.0 µF is required for LDO stability. The MCP1710 is stable with ceramic, tantalum and aluminum-electrolytic capacitors. See Section 4.2 “Output Capacitor” for output capacitor selection guidance. 3.3 Feedback Pin (FB) The output voltage is connected to the FB input. This sets the output voltage regulation value. 2012 Microchip Technology Inc. Shutdown Control Input (SHDN) The SHDN input is used to turn the LDO output voltage on and off. When the SHDN input is at a logic-high level, the LDO output voltage is enabled. When the SHDN input is pulled to a logic-low level, the LDO output voltage is disabled. When the SHDN input is pulled low, the LDO enters a low-quiescent current shutdown state, where the typical quiescent current is 0.1 nA. 3.6 Exposed Pad Pin (EP) The VDFN-8 package has an exposed metal pad on the bottom of the package. The exposed metal pad gives the device better thermal characteristics by providing a good thermal path to either the PCB or heat sink, to remove heat from the device. The exposed pad of the package is at ground potential. DS25158A-page 11 MCP1710 NOTES: DS25158A-page 12 2012 Microchip Technology Inc. MCP1710 4.0 DEVICE OVERVIEW The MCP1710 is a 100 mA/200 mA output current, low dropout (LDO) voltage regulator. The low dropout voltage of 450 mV maximum at 200 mA of current makes it ideal for battery-powered applications. The input voltage range is 2.7V to 5.5V. The MCP1710 adds a shutdown-control input pin. The MCP1710 is available in five standard fixed-output voltage options: 1.2V, 1.8V, 2.5V, 3.3V and 4.2V. The MCP1710 uses a proprietary voltage reference and sensing scheme to maintain the ultra-low 20 nA quiescent current. 4.1 Output Current and Current Limiting The MCP1710 LDO is tested and ensured to supply a minimum of 200 mA of output current for the 1.2V to 3.5V output range, and 100 mA of output current for the 3.5V to 4.2V output range. The MCP1710 has no minimum output load, so the output load current can go to 0 mA and the LDO will continue to regulate the output voltage within the specified tolerance. The MCP1710 also incorporates an output current limit. The current limit is set to 250 mA typical for the 1.2V VR 3.5V range, and 175 mA typical for the 3.5V VR 5.5V range. 4.2 Output Capacitor The MCP1710 requires a minimum output capacitance of 1 µF for output voltage stability. Ceramic capacitors are recommended because of their size, cost and robust environmental qualities. Aluminum-electrolytic and tantalum capacitors can be used on the LDO output as well. The output capacitor should be located as close to the LDO output as is practical. Ceramic materials X7R and X5R have low temperature coefficients and are well within the acceptable ESR range required. A typical 1 µF X7R 0805 capacitor has an ESR of 50 m. 4.3 For applications that have output step load requirements, the input capacitance of the LDO is very important. The input capacitance provides the LDO with a good local low-impedance source to pull the transient currents from. This will allow the LDO to respond quickly to the output load step. For good stepresponse performance, the input capacitor should be of equivalent or higher value than the output capacitor. The capacitor should be placed as close to the input of the LDO as is practical. Larger input capacitors will also help reduce any high-frequency noise on the input and output of the LDO, and reduce the effects of any inductance that exists between the input source voltage and the input capacitance of the LDO. 4.4 Shutdown Input (SHDN) The SHDN input is an active-low input signal that turns the LDO on and off. The SHDN threshold is a percentage of the input voltage. The maximum inputlow logic level is 30% of VIN and the minimum high logic level is 70% of VIN. On the rising edge of the SHDN input, the shutdown circuitry has a 30 ms (typical) delay before allowing the LDO output to turn on. This delay helps to reject any false turn-on signal or noise on the SHDN input signal. After the 30 ms delay, the LDO output enters its current limited soft-start period as it rises from 0V to its final regulation value. If the SHDN input signal is pulled low during the 30 ms delay period, the timer will be reset and the delay time will start over again on the next rising edge of the SHDN input. The total time from the SHDN input going high (turn-on) to the LDO output being in regulation is typically 30 ms. See Figure 4-1 for a timing diagram of the SHDN input. TOR 20 ns (typical) 30 ms 10 µs SHDN Input Capacitor Low input-source impedance is necessary for the LDO output to operate properly. When operating from batteries, or in applications with long lead length (> 10 inches) between the input source and the LDO, some input capacitance is recommended. A minimum of 1.0 µF to 4.7 µF is recommended for most applications. 2012 Microchip Technology Inc. VOUT FIGURE 4-1: Diagram. Shutdown Input Timing DS25158A-page 13 MCP1710 4.5 Dropout Voltage Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 3% below the nominal value that was measured with a VR + 0.8V differential applied. The MCP1710 LDO has a low-dropout voltage specification of 450 mV for the 1.2V VR 3.5V range (typical) at 200 mA out, and 400mV for the 3.5V VR 5.5V range (typical) at 100 mA out. See Section 1.0 “Electrical Characteristics” for maximum dropout voltage specifications. DS25158A-page 14 2012 Microchip Technology Inc. MCP1710 5.0 APPLICATION CIRCUITS/ISSUES 5.1 Typical Application The MCP1710 is used for applications that require ultra-low quiescent current draw. VOUT VIN SHDN GND LOAD COUT CIN + - FB The total power dissipated within the MCP1710 is the sum of the power dissipated in the LDO pass device and the P(IGND) term. Because of the CMOS construction, the typical IGND for the MCP1710 is 200 µA at full load. Operating at a maximum VIN of 5.5V results in a power dissipation of 1.1 mW. For most applications, this is small compared to the LDO pass device power dissipation, and can be neglected. The maximum continuous operating junction temperature specified for the MCP1710 is +85°C. To estimate the internal junction temperature of the MCP1710, the total internal power dissipation is multiplied by the thermal resistance from junction-toambient (RJA) of the device. The thermal resistance from junction-to-ambient for the 2 x 2 VDFN-8 package is estimated at 73.1°C/W. EQUATION 5-3: FIGURE 5-1: 5.2 Typical Application Circuit. Power Calculations 5.2.1 POWER DISSIPATION The internal power dissipation within the MCP1710 is a function of input voltage, output voltage, output current and quiescent current. Equation 5-1 can be used to calculate the internal power dissipation for the LDO. EQUATION 5-1: P LDO = VIN MAX – V OUT MIN I OUT MAX Where: PLDO = LDO Pass device internal power dissipation T J MAX = PTOTAL R JA + T A MAX Where: TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total device power dissipation RJA = Thermal resistance from junction to ambient TAMAX = Maximum ambient temperature The maximum power dissipation capability for a package can be calculated given the junction-toambient thermal resistance and the maximum ambient temperature for the application. Equation 5-4 can be used to determine the package maximum internal power dissipation. VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage EQUATION 5-4: T J MAX – T A MAX P D MAX = --------------------------------------------------R JA IOUT(MAX) = Maximum output current In addition to the LDO pass element power dissipation, there is power dissipation within the MCP1710 as a result of quiescent or ground current. The power dissipation as a result of the ground current can be calculated using Equation 5-2: EQUATION 5-2: PI GND = V IN MAX I GND Where: PD(MAX) = Maximum device power dissipation TJ(MAX) = maximum continuous junction temperature TA(MAX) = maximum ambient temperature RJA = Thermal resistance from junction-to-ambient Where: PI(GND) = Power dissipation due to the quiescent current of the LDO VIN(MAX) = Maximum input voltage IGND = Current flowing in the GND pin 2012 Microchip Technology Inc. DS25158A-page 15 MCP1710 EQUATION 5-5: T J RISE = P D MAX R JA TJ(RISE) = Rise in device junction temperature over the ambient temperature PD(MAX) = Maximum device power dissipation RJA = Thermal resistance from junction-toambient EQUATION 5-6: T J = T J RISE + T A TJ = Junction temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature TA = Ambient temperature 184.108.40.206 Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction-to-ambient for the application. The thermal resistance from junction-to-ambient (RJA) is derived from EIA/JEDEC standards for measuring thermal resistance. The EIA/JEDEC specification is JESD51. The standard describes the test method and board specifications for measuring the thermal resistance from junction-to-ambient. The actual thermal resistance for a particular application can vary depending on many factors such as copper area and thickness. Refer to AN792, “A Method to Determine How Much Power a SOT-23 Can Dissipate in an Application” (DS00792), for more information regarding this subject. EXAMPLE 5-2: TJ(RISE) = PTOTAL x RJA 5.3 Typical Application Examples Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. The power dissipation as a result of ground current is small enough to be neglected. 5.3.1 POWER DISSIPATION EXAMPLE EXAMPLE 5-1: TJRISE = 0.206W x 73.1°C/W TJRISE = 15.1°C 220.127.116.11 Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below: EXAMPLE 5-3: Package TJ = TJRISE + TA(MAX) Package Type = 2 x 2 VDFN-8 TJ = 15.1°C + 60.0°C Input Voltage TJ = 75.1°C VIN = 3.3V ± 5% LDO Output Voltage and Current VOUT = 2.5V 18.104.22.168 Maximum Package Power Dissipation at +60°C Ambient Temperature IOUT = 200 mA Maximum Ambient Temperature TA(MAX) = +60°C Internal Power Dissipation PLDO(MAX) = (VIN(MAX) – VOUT(MIN)) x IOUT(MAX) PLDO = ((3.3V x 1.05) – (2.5V x 0.975)) x 200 mA EXAMPLE 5-4: 2x2 DFN-8 (73.1°C/W RJA): PD(MAX) = (85°C – 60°C)/73.1°C/W PD(MAX) = 0.342W PLDO = 0.206 Watts DS25158A-page 16 2012 Microchip Technology Inc. MCP1710 6.0 PACKAGING INFORMATION 6.1 Package Marking Information Example: 8-Lead VDFN (2 x 2 x 0.9) Legend: XX...X Y YY WW NNN e3 * Note: Part Number Code MCP1710T-12I/LZ AAA MCP1710T-18I/LZ AAB MCP1710T-25I/LZ AAC MCP1710T-33I/LZ AAD MCP1710T-42I/LZ AAE AAA 256 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2012 Microchip Technology Inc. DS25158A-page 17 MCP1710 DS25158A-page 18 2012 Microchip Technology Inc. MCP1710 2012 Microchip Technology Inc. DS25158A-page 19 MCP1710 DS25158A-page 20 2012 Microchip Technology Inc. MCP1710 APPENDIX A: REVISION HISTORY Revision A (September 2012) • Original Release of this Document. 2012 Microchip Technology Inc. DS25158A-page 21 MCP1710 NOTES: DS25158A-page 22 2012 Microchip Technology Inc. MCP1710 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. -XX T X/ Device Tape and Output Reel Voltage XX Temp. Package Device: MCP1710T: 200 mA Low Dropout Regulator Tape and Reel Output Voltage*: 12 18 25 33 42 = = = = = 1.2V “Standard” 1.8V “Standard” 2.5V “Standard” 3.3V “Standard” 4.2V “Standard” *Contact factory for other output voltage options Temperature: I = -40C to +85C (Industrial) Package Type: LZ = Very Thin Dual Flatpack, No Lead (VDFN), 8-Lead 2012 Microchip Technology Inc. Examples: a) b) c) d) e) MCP1710T-12I/LZ: Tape and Reel, 1.2V Output Voltage, Industrial Temp., 8-LD VDFN package MCP1710T-18I/LZ: Tape and Reel, 1.8V Output Voltage, Industrial Temp., 8-LD VDFN package MCP1710T-25I/LZ: Tape and Reel, 2.5V Output Voltage, Industrial Temp., 8-LD VDFN package MCP1710T-33I/LZ: Tape and Reel, 3.3V Output Voltage, Industrial Temp., 8-LD VDFN package MCP1710T-42I/LZ: Tape and Reel, 4.2V Output Voltage, Industrial Temp., 8-LD VDFN package DS25158A-page 23 MCP1710 NOTES: DS25158A-page 24 2012 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2012, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-62076-575-3 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2012 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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