AWT6167R GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • Integrated Vreg (regulated supply) Harmonic Performance ≤ -20 dBm High Efficiency (PAE) at Pmax: -GSM900, 55% -DCS, 53% +35 dBm GSM900 Output Power at 3.5 V • +33 dBm DCS Output Power at 3.5 V • 55 dB Dynamic Range • GPRS Class 12 Capable • RoHS Compliant Package, 250°C MSL-3 AWT6167 R APPLICATIONS • Dual/Tri/Quad Band Handsets & PDAs M15 Package 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module PRODUCT DESCRIPTION reducing the number of external components required in the final application. Both PA die, GSM900 and DCS, are fabricated using state of the art InGaP HBT technology, known for it is proven reliability and temperature stability. As with previous generations, the AWT6167R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6167R input and output terminals are internal matched to 50 ohms and DC blocked, VCC2 DCS_IN BS TX_EN MATCH MATCH DCS_OUT CMOS BIAS/Integrated Power Control VCC_OUT VBATT CEXT H(s) VRAMP GSM900_IN MATCH MATCH VCC2 Figure 1: Block Diagram 06/2005 GSM900_OUT AWT6167R GND 1 VCC2 DCS_IN 18 17 16 DCS_OUT BS 2 15 GND TX_EN 3 14 GND VBATT 4 13 VCC_OUT CEXT 5 12 GND VRAMP 6 11 GND GSM_IN 7 10 GSM_OUT 9 VCC 2 GND 8 Figure 2: Pinout (X- ray Top View) Table 1: Pin Description 2 PIN NAME 1 DCS_IN 2 BS 3 TX_EN 4 DESCRIPTION PIN NAME DCS RF Input 10 GSM_OUT Band Select Logic Input 11 GND Ground TX Enable Logic Input 12 GND Ground VBATT Battery Supply Connection 13 VCC_OUT 5 C EXT Bypass 14 GND Ground 6 VRAMP Analog Signal used to control the output power 15 GND Ground 7 GSM_IN GSM900 RF Input 16 DCS_OUT 8 VCC2 VCC Control Input for GSM900 Pre-amplifier 17 GND Ground 9 GND Ground 18 VCC2 VCC Control Input for DCS Pre-amplifier PRELIMINARY DATA SHEET - Rev 1.0 06/2005 DESCRIPTION GSM900 RF Output Control Voltage Output which must be connected to VCC2 DCS RF Output AWT6167R ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VBATT) - +7 V RF Input Power (RFIN) - 11 dB m Control Voltages (VRAMP) -0.3 1.8 V Storage Temperature (TSTG) - 55 150 °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: ESD Ratings PARAMETER METHOD RATING UNIT ESD Threshold voltage (RF ports) HBM >2.5 kV ESD Threshold voltage (control inputs) HBM >2.5 kV Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Human body model HBM employed is resistance = 1500 Ω , capacitance = 100 pF. Table 4: Digital Inputs PARAMETER MIN TYP MAX UNIT Logic High Voltage (VIH) 1.2 - 3.0 V Logic Low Voltage (VIL) - - 0.5 V Logic High Current (IIH) - - 30 µA Logic Low Current (IIL) - - 30 µA Table 5: Control Logic Table MODE T x_E N BS PA Enable HIGH X GSM900 Mode HIGH LOW DCS Mode HIGH HIGH PA Disable LOW X PRELIMINARY DATA SHEET - Rev 1.0 06/2005 3 AWT6167R Table 6: Operating Ranges PARAMETER MIN TYP MAX UNIT Case Temperature (TC) -20 - 85 °C Supply Voltage (VBATT) 3.0 3.5 4.8 V Power Supply Leakage Current COMMENTS VBATT = 4.8 V, VRAMP = 0 V, TX_EN = LOW, No RF applied - 1 10 µA 0.2 - 1.6 V Turn on time (TON) - - 1 µs VRAMP = 0.2 V, TX_EN = LOW → High PIN = 5 dBm Turn off time (TOFF) - - 1 µs VRAMP = 0.2 V, TX_EN = HIGH → LOW PIN = 5 dBm Rise Time (TRISE) - - 1 µs POUT = -10 dBm →PMAX (within 0.2 dB) Fall Time (TFALL) - - 1 µs POUT = PMAX→ -10 dBm (within 0.2 dB) VRAMP Input Capacitance - 3 - pF VRAMP Input Current - - 10 µA Duty Cycle - - 50 % Control Voltage Range The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 4 PRELIMINARY DATA SHEET - Rev 1.0 06/2005 AWT6167R Table 7: Electrical Characteristics for GSM900 Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH) PARAMETER MIN TYP MAX UNIT Operating Frequency (FO) 880 - 915 MHz 0 3.0 5 dB m Output Power, PMAX 34.5 35.0 - dB m Freq = 880 to 915 MHz Degraded Output Power 32.5 33.5 - dB m VBATT = 3.0 V, TC = 85 °C, PIN = 0 dBm 50 55 - % Forward Isolation 1 - -38 -33 dB m TX_EN = LOW, VRAMP = 0.2 V PIN = 5 dBm Forward Isolation 2 - -25 -20 dB m TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Cross Isolation (Coupling of GSM 2fo and 3fo to DCS/PCS port) - -23 -17 dB m POUT ≤ 34.5 dBm - -22 -30 -10 -10 dB m POUT ≤ 34.5 dBm Input Power PAE @ PMAX Harmonics 2fo, 3fo n*FO, (n ≥ 4), FO ≤ 12.75 GHz COMMENTS Freq = 880 to 915MHz VSWR = 8:1 All Phases, POUT ≤ 34.5 dBm Stability Ruggedness - - -36 dB m FOUT < 1 GHz - - -30 dB m FOUT > 1 GHz - - 10:1 VSWR - -84 -77 dB m FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT ≤ 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960MHz, POUT ≤ 34.5 dBm RX Noise Power Input VSWR All load phases, POUT ≤ 34.5 dBm - -87 -83 dB m - 1.5:1 2.5:1 - PRELIMINARY DATA SHEET - Rev 1.0 06/2005 POUT ≤ 34.5 dBm 5 AWT6167R Table 8: Electrical Characteristics for DCS Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH) PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency 1710 - 1785 MHz Input Power 0 3.0 5 dB m Output Power, PMAX 32 33 - dB m Degraded Output Power 30 31 - dB m VBATT = 3.0 V, TC = 85 °C, PIN = 0 dBm PAE @ PMAX 45 53 - % Freq = 1710 to 1785 MHz Forward Isolation 1 - -40 -35 dB m TX_EN = LOW, VRAMP = 0.2 V PIN = 5 dBm Forward Isolation 2 - -22 -17 dB m TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Harmonics 2FO, 3FO n*FO, (n ≥ 4), FO ≤ 12.75 GHz - -22 -20 -10 -8 dB m POUT ≤ 32 dBm VSWR = 8:1 All Phases, POUT ≤ 32 dBm Stability Ruggedness 6 - - -36 dB m FOUT < 1 GHz - - -30 dB m FOUT > 1 GHz - - 10:1 VSWR RX Noise Power - -86 -80 Input VSWR - 1.5:1 2.5:1 dB m PRELIMINARY DATA SHEET - Rev 1.0 06/2005 All load phases, POUT ≤ 32 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX = 1805 to 1880 MHz, POUT ≤ 32 dBm POUT ≤ 32 dBm AWT6167R APPLICATION INFORMATION DCS RF INPUT DCS RF OUTPUT AWT6167R GSM900 RF OUTPUT GSM900 RF INPUT Figure 3: Application Schematic PRELIMINARY DATA SHEET - Rev 1.0 06/2005 7 AWT6167R PACKAGE OUTLINE Figure 4: M15 Package Outline - 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module AWT6167R AWT6167R Figure 5: Branding Specification 8 PRELIMINARY DATA SHEET - Rev 1.0 06/2005 AWT6167R NOTES PRELIMINARY DATA SHEET - Rev 1.0 06/2005 9 AWT6167R NOTES 10 PRELIMINARY DATA SHEET - Rev 1.0 06/2005 AWT6167R NOTES PRELIMINARY DATA SHEET - Rev 1.0 06/2005 11 AWT6167R ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWT6167RM15P8 -20 oC to +85 oC RoHS Compliant 18 P i n 6 mm x 6 mm x 1.3 mm Tape and Reel, 2500 pieces per reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 PRELIMINARY DATA SHEET - Rev 1.0 06/2005